Determination of the width of the transition layer between the crystalline and amorphous zones in nylon 1010 by SAXS

The width of the transition layer between the crystalline and amorphous zones in nylon 1010 was determined by SAXS with point collimation and long-slit collimation, respectively. The width of the transition layer, E, was found to be 1.7 nm. The results show that the width of the transition layer is independent of crystallinity.     

单层球面网壳地震反应特征分析

考虑不同矢跨比、荷载、跨度和支座刚度等多种因素的影响,对单层球面网壳在地震作用下的反应进行了较全面的研究,给出了其随各参数变化的规律,得出了在单层球面网壳抗震设计中起控制作用的是水平地震作用而不是竖向地震作用等有益的结论.此外本文还给出了由于阻尼比不同而需对引用现行抗震规范反应谱分析的网壳地震作用进行修正的建议.     

分形粗糙面的电磁散射－扩展边界条件

用扩展边界条件方法对分形粗糙良导体面及介质面的电磁散射问题进行了分析。用推广的Floquet模式，在分界面处将场分量用Fourier级数展开，根据边界条件及扩展边界条件得到了水平极化和垂直极化散射场的幅度分量的表达式。用其它近似方法（Kirchhoff和Rayleigh方法）及能量守恒准则验证了此方法的有效性。     

河口水流、波浪、潮流、泥沙、河床变形二维数学模型

根据河口“波浪掀沙，潮流输沙”的泥沙运动机制，引入“波浪幅射应力”反应波浪对水体和泥沙的驱动力．考虑波浪对底部泥沙作用力、波浪对水流挟沙能力的影响及风场对水流和泥沙运动的影响．同时考虑泥沙粒径大小、水体含盐度、含沙量及水流紊动程度等因素对絮凝沉速的影响．用ＡＤＩ算法求解沿水深平均方程，破开算子法解悬移质不平衡输沙方程及河床变形方程，引入通度概念处理岸滩不规则边界，建立河口水流、波浪、潮流、泥沙、河床变形二维数学模型．通过实测资料及卫星摇感图像对所建数学模型进行检验，表明它可以较好地预测河口泥沙的运动     

A semi-analytic boundary element method for parabolic problems

A new semi-analytic solution method is proposed for solving linear parabolic problems using the boundary element method. This method constructs a solution as an eigenfunction expansion using separation of variables. The eigenfunctions are determined using the dual reciprocity boundary element method. This separation of variables-dual reciprocity method (SOV-DRM) allows a solution to be determined without requiring either time-stepping or domain discretisation. The accuracy and computational efficiency of the SOV-DRM is found to improve as time increases. These properties make the SOV-DRM an attractive technique for solving parabolic problems.     

管网保温层热经济寿命的决策方法

利用保温裸露因数的概念来反映保温层保温性能的变化，提出采用统一原则来建立适用于单元系统和复合系统保温层热经济寿命的数学模型，并通过实例证明在热经济寿命终了时更新保温层，可使系统的运行具有最大的经济性。     

挤扩支盘桩在福建省防震减灾中心大楼的应用

结合工程实例阐述挤扩支盘桩施工质量控制和技术措施,对施工过程出现的异常情况提出对策,为类似工程提供借鉴。     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.