超细氧化锌粉体的制备及尺寸控制

根据气相化学反应法 (CAD)制备超细粉的原理 ,从低品位氧化锌矿中采用火法冶金方法直接制备超细氧化锌粉 ,对所得氧化锌的粒度尺寸、微观结构和粒度分布进行测试 ;考察了冷却强度以及收集装置对超细氧化锌粒度及粒度分布的影响 ;讨论了氧化锌粉体团聚的原因及对策、试验条件对氧化锌尺寸的控制等     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

Nb2O5掺杂对ZnO压敏电阻器电性能的影响

本文研究了Ｎｂ＿２Ｏ＿５掺杂以及Ｎｂ＿２Ｏ＿５与ＺｎＯ煅烧对ＺｎＯ压敏电阻器电性能的影响。实验表明，Ｎｂ＿２Ｏ＿５的掺入使压敏电场减少，当Ｎｂ＿２Ｏ＿５含量为０．１％ｍｏｌ时，其压敏电场最小．非线性系数最大。煅烧温度越高，压敏电场越高，非线性系数越大。     

掺杂对低压ZnO压敏陶瓷材料显微结构及性能的影响

本文探讨了多种金属氧化物对ＺｎＯ－Ｂｉ＿２Ｏ＿３－ＴｉＯ＿２系材料的改性作用和对其微结构的影响，为得到预定性能的材料提供了掺杂方面的实验依据。     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

氧化锌颗粒膜电阻响应-恢复特性研究

测试了氧化锌颗粒膜电阻响应-恢复特性，讨论了颗粒形态，加热电压、环境气氛、气氛浓度和注入方式等因素对电阻响应-恢复特性的影响。结果表明，随着加热电压的升高，电阻响应-恢复的速度和程度明显加大；断续注入时颗粒膜电阻值的响应随着浓度的增加逐步减弱．     

采用ZnO灭磁时阀片均流/均能的探讨

从ZnO电阻的非线性特性出发,对采用ZnO作为灭磁电阻时阀片的均流/均能进行理论论述,指出阀片均能性能的好坏主要依赖于阀片自身的特性;分析比较了ZnO阀片的不同选择方法对均流/均能的影响,指出阀片的均流/均能很大程度上取决于可供选择的阀片的库存量.该研究为发电机励磁系统的安全稳定运行提供了有力的保证.     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

Conductivity enhancement in transparetn ZnO films via Al-dopping produced by CW-CO2 laser-induced evaporation

Highly conductive transparent aluminium-doped ZnO (ZnO:A1) films were successfully deposited by CW-CO₂ laser-induced evaporation. Optimisation of evaporation parameters was based on laser power, substrate temperature, O₂ partial pressure in the vacuum chamber and amount of Al in the ZnO source pellet. ZnO:A1 films with an electrical resistivity as low as 6.6 × 10⁻²Ω·cm and an optical transmission of 80% at 500nm were obtained at laser power of 15 W, substrate temperature of about 200°C, O₂ partial pressure of 6—7 × 10⁻⁴ Torr and 5wt.% Al. Conductivity of ZnO films can be increased one order via Al-doping in ZnO films. The films obtained by laser-induced evaporation have compared quite favorably with the high quality films obtained by sputtering.     

ZnO压敏陶瓷的非线性功能添加剂

本文采用单元掺杂与多元掺杂的方法，系统研究了几种过渡金属氧化物添加剂在控制ＺｎＯ压敏陶瓷非线性方面的作用，并根据金属阳离子外壳层电子结构稳定性和缺陷化学反应进行了分析，认为阳离子具有不饱和外层电子结构且半径与Ｚｎ＾２＋离子相近的过渡金属氧化物能改善ＺｎＯ压敏陶瓷非线性。