Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

Characterization of one-step,chromate-free,primer systems using liquid-state Si and C NMR

Coatings derived from organofunctional silanes have been investigated as possible replacements for the chromate-based systems used in the aerospace industry. In this study, organofunctional silanes [bis-(triethoxysilylpropyl)ethane and bis(triethoxysilylpropyl) tetrasulfide] were reacted with commercially available acrylate (ECO-CRYL™ 9790) and epoxy (EPI-REZ™ WD-510) resins, resulting in a one-step, low-VOC, chromate-free primer. Liquid-state ²⁹Si and ¹³C NMR were used to determine structural characteristics of various optimized formulations.     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

Shallow hydrogen-induced donor in monocrystalline silicon and quantum wires

Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at 450 °C, have been studied. The temperature dependences of equilibrium and non-equilibrium carrier concentration and relaxation kinetics were investigated. IR absorption lines of bistable shallow donor electronic excitations were detected. The obtained experimental data demonstrate that the bistable shallow donors can be identified as quantum wire defect nanoclusters.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.