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71.
丁洪生 《石油化工高等学校学报》1998,11(2):15-17
采用电化学方法成功地合成了钌掺杂聚吡咯络合物(PPRUC),PPRUC是一种很稳定的非晶态络合物,合成掺杂聚吡咯络合物来改变催化剂的存在形态,使催化剂与反应物和产物很好地分离。用物理吸附仪对PPRUC进行了比表面积和孔容等的测定,用红外和电子能谱对PPRUC进行了表征,用元素分析仪测定了PPRUC含C、N、H的比。根据测定结果和文献报道推断了PPRUC的基本结构。 相似文献
72.
《Ceramics International》2015,41(4):5836-5842
Sm- and Gd-doped ceria electrolytes Ce0.9Gd0.1O1.95 (GDC) and Ce0.9Sm0.1O1.95 (SDC) were prepared by using the Pechini method. The microstructural and physical properties of the samples were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetry/differential thermal analysis (TG/DTA) and Fourier Transform Infrared Spectroscopy (FTIR). The TG/DTA and XRD results indicated that a single-phase fluorite structure formed at a relatively low calcination temperature, 400 °C. The XRD patterns of the samples revealed that the crystallization of the SDC powders was superior than that of the GDC powders at 400 °C. The sintering behavior and ionic conductivity of the GDC and SDC pellets were also investigated. The sintering results showed that the SDC samples were found to have higher sinterability than the GDC samples at a relatively low sintering temperature, 1300 °C, a significantly lower temperature than 1650 °C, which is required for ceria solid electrolytes prepared by solid state techniques. The impedance spectroscopy results revealed that SDC has a higher ionic conductivity compared to GDC. 相似文献
73.
Dense and thin electrolyte films are desirable for solid oxide fuel cells (SOFCs) because of their low gas leakage and low ohmic resistances. This work aims at the preparation of thin dense Gd‐doped ceria (CGO) electrolyte films using a cost‐effective deposition method in ambient atmosphere–electrostatic spray deposition (ESD). The deposition parameters such as deposition temperature, concentration and flow rate of precursor solution were changed systematically to examine their effects on film morphology and hence electrochemical performance. While the film morphology was examined by a scanning electron microscope, the electrochemical performance was revealed by measuring open circuit voltages (OCVs) of NiO‐CGO/CGO/Ba0.5Sr0.5Co0.8Fe0.2O3‐δ (BSCF) cells in 500–700 °C with humidified hydrogen as fuel and air as oxidant. The results show that a CGO film of 25 μm thick obtained at a deposition temperature of 400 °C, a precursor solution flow rate of 6 ml h–1 and a precursor concentration of 0.3 M was dense with very few isolated pores and the OCV of the associated cell was 0.915 V at 500 °C. This implies that the CGO film has negligible gas leakage and ESD is a promising method for preparing thin dense electrolyte films for SOFCs. 相似文献
74.
Tae Dong KangKyung Ik Sim Jae Hoon KimZhe Wu Byung-ki CheongHosun Lee 《Thin solid films》2012,520(19):6221-6225
We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films. 相似文献
75.
Seung-Seok Baek Naesung Lee Byung-Kook Kim Haejung Chang Sun-Ju Song Jun-Young Park 《International Journal of Hydrogen Energy》2012
Highly conductive Er0.2Bi0.8O1.5 (ESB) and rare-earth doped ceria solid oxide electrolytes (SOEs) at intermediate temperature (IT) continue to suffer disadvantages in terms of thermodynamic instability and significant electronic conduction, respectively, at low oxygen partial pressure for solid oxide fuel cell (SOFC) operations. It is therefore necessary to improve the low-temperature ionic conductivity in order to enhance the electrolytic domain of these materials and thereby mitigate cell efficiency dissipation by electronic conduction. In this work, an advanced multiphase carbonate composite material based on ceria has been developed to overcome this IT-SOE challenge. This advanced electrolyte is comprise of nanostructured neodymium-doped ceria (NDC) and 38 wt% (Li–0.5Na)2CO3 carbonate with a small amount of ESB phase. The addition of 2 wt% ESB in ceria-based materials decreases the grain boundary resistance of the SOEs in the IT range. Further, a small amount of highly conducting ESB phase in the NDC/[(Li–0.5Na)2CO3] composite electrolyte increases the overall conductivity of the composite SOEs. The NDC electrolyte containing 38 wt% carbonate shows the highest conductivity of 0.104 Scm−1 at 600 °C, while the conductivity is increased to 0.165 Scm−1 by the addition of 2 wt% ESB. In addition, the activation energy of the multiphase composite electrolytes (0.52 eV) is lower than that of the NDC/carbonates (0.65 eV) in the IT range. This is attributed to the effect of the physical properties of the NDC sample, induced by the light ESB doping, on the ionic conductivity, and this effect is closely associated with the grain boundary property. Furthermore, the interfacial effects of the multiphase materials also contribute to the improved conductivity of this advanced composite electrolyte. 相似文献
76.
77.
Visible-light-driven nitrogen-doped TiO2 was synthesized using a novel nitrogen-ion donor of hydrazine hydrate. Low-concentration (0.2 at%) nitrogen species and Ti3+ were detected in the TiO2-based photocatalyst by X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) spectroscopy. The trace amount of Ti–N would contribute to the minor band-gap narrowing of about 0.02 eV. Those nitrogen-containing species, especially the NO22− species, form surface states, which make the catalysts possible to degrade 4-chlorophenol (4-CP) under visible irradiation (λ>400 nm). Moreover, Ti3+ species induce oxygen vacancy states between the valence and the conduction bands, which would also contribute to the visible response. The photocatalytic activity of the nitrogen-doped TiO2 catalyst was thought to be the synergistic effect of nitrogen and Ti3+ species. The catalysts showed higher photocatalytic activity for degradation of 4-CP than pure TiO2 under not only visible but also UV irradiation. The visible response and the higher UV activity of the nitrogen-doped TiO2 make it possible to utilize solar energy efficiently to execute photocatalysis processes. 相似文献
78.
《International Journal of Hydrogen Energy》2020,45(55):30496-30510
Ultrathin sheets of ZnS(EN)0.5 modified with Cd2+ ions were prepared by chemical precipitation in a mixture of butanol-ethylenediamine-water solution. The Cd2+ content was varied from 0.1 to 0.6 M ratio and its influence in the physicochemical properties of the formed Cd–ZnS(EN)0.5 hybrid compounds was investigated by diverse techniques: X-ray Diffraction, Thermogravimetric, Textural analysis, Infrared, Diffuse Reflectance and X-ray Photoelectron Spectroscopies, Scanning Electron and High-Resolution Transmission Electron Microscopy. The photocatalytic H2 production of the unmodified ZnS(EN)0.5 hybrid was tested using hydrazine, ethanol, and methanol as sacrificial electron donors reagents (SEDr), presenting an H2 evolution rate of 2.4, 21 and 23 μmolh−1, respectively. The results showed that the orthorhombic ZnS(EN)0.5 structure was stable but suffer exfoliation of the lamellar structure during the photocatalytic cycles in methanol-water solution under UV irradiation. The doped Cd–ZnS(EN)0.5 hybrid presented an enhanced H2 production rate (32 μmolh−1) for low Cd2+ doping, showing only minor exfoliation of the lamellar structure and stability of the orthorhombic structure, preserving the high photoactivity after 6 cycles of irradiation. 相似文献
79.
80.
Samadhan B. Patil Anand V. Vairagar Alka A. Kumbhar Laxmi K. Sahu V. Ramgopal Rao N. Venkatramani R. O. Dusane B. Schroeder 《Thin solid films》2003,430(1-2):63-66
Highly conducting p- and n-type poly-Si:H films were deposited by hot wire chemical vapor deposition (HWCVD) using SiH4+H2+B2H6 and SiH4+H2+PH3 gas mixtures, respectively. Conductivity of 1.2×102 (Ω cm)−1 for the p-type films and 2.25×102 (Ω cm)−1 for the n-type films was obtained. These are the highest values obtained so far by this technique. The increase in conductivity with substrate temperature (Ts) is attributed to the increase in grain size as reflected in the atomic force microscopy results. Interestingly conductivity of n-type films is higher than the p-type films deposited at the same Ts. To test the applicability of these films as gate contact Al/poly-Si/SiO2/Si capacitor structures with oxide thickness of 4 nm were fabricated on n-type c-Si wafers. Sputter etching of the poly-Si was optimized in order to fabricate the devices. The performance of the HWCVD poly-Si as gate material was monitored using C–V measurements on a MOS test device at different frequencies. The results reveal that as deposited poly-Si without annealing shows low series resistance. 相似文献