用于高压电容器的SrTiO3基陶瓷

报道ＳｒＴｉＯ３基陶瓷的制备方法和介电性质，给出了用此种陶瓷制成的高压电容器的试验结果，并对它位进行了讨论。     

基于MATLAB仿真的无功补偿电容器投切控制研究

对目前常用的无功补偿电容器投切控制方案所存在的不足进行了详细的分析,给出了补偿电容器投切的优化控制方案,并在MATLAB电力仿真环境下进行了仿真试验。结果表明,所提出的优化方案达到较理想的效果。     

一种基于混沌的随机数发生器设计及其IC实现

在密码学、仿真学以及集成电路测试等许多领域 ,随机数起着重要的作用。在密码学中 ,通常要求所使用的随机数具有不可预测性。基于混沌现象 ,使用开关电容技术 ,用集成电路实现了一种硬件随机数发生器。测试结果表明 ,其产生的序列具有不可预测性 ,可以满足密码学的应用要求。     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

The High Field Project at Dresden/Rossendorf: A Pulsed 100 T/10 ms Laboratory at an Infrared Free-Electron-Laser Facility

This article describes the project to build a pulsed magnetic field user laboratory at the Forschungszentrum Rossendorf near Dresden. Using a 50 MJ/24 kV capacitor bank, pulsed fields and rise times of 100 T/10 ms, 70 T/100 ms, and 60 T/1 s should be achieved. The laboratory will be built next to a free-electron-laser-facility for the middle and far infrared (5 to 150 µm, 2 ps, cw). We describe the work which has been performed until now to start the construction of the laboratory in 2003: coil concepts and computer simulations, materials development for the high field coils, and design of the capacitor bank modules. In addition, a pilot laboratory has been set up where fields up to 62 T/15 ms have been obtained with a 1 MJ/10 kV capacitor module. It is used to gain experience in the operation of such a facility and to test various parts of it. In this test laboratory special devices have been developed for measurements of magnetization and magnetoresistance, and have been successfully used to investigate various materials including semiconductors and Heavy Fermion compounds. In particular, metamagnetic transitions in intermetallic compounds and the irreversibility field of a high-T _c superconductor have been determined. Shubnikov–de Haas oscillations have been observed in the semimetallic compound CeBiPt. Resistance relaxation has been observed to start less than 1second after the field pulse. It could be shown for the first time that nuclear magnetic resonance (NMR) is detectable in pulsed fields.     

开关电流技术：一种新的模拟抽样数据处理方法

开关电流（ＳＩ）技术是一种新的模拟抽样数据处理技术，介绍了开关电流电路的基本单元结构，讨论了目前开关电流技术中存在的问题及其解决方法。对开关电流技术与开关电容技术的一些基本特征进行了比较，ＳＩ技术不仅结构简单，而且与标准ＣＭＯＳ工艺兼容，可望替代开关电容电路。     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。     

Determination of generation lifetime fromC-t transients under linear voltage ramp bias

When a linear voltage ramp is applied to the gate of a MOS capacitor, a capacitancetime (C-t) transient is observed. The MOS capacitor is biased into strong inversion before applying the voltage ramp in order to eliminate surface generation. FromC-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted fromC-t curves under varying voltage sweep rates are close each other, and they are consistent with the lifetimes extracted by saturation capacitance method.