Fabrication of Compound Lattice by Holographic Lithography

Some compound lattices in photonic crystals with large complete photonic band gaps, such as the diamond structure and the two-dimensional hexagonal compound structure, is desired for fabrication. A novel method for fabrication of compound lattices by holographic lithography is reported. The key point is phase modulation by photoelectrical control and multiple-exposure techniques. This technique introduces many advances: for instance,using the same coherent beams and without changing the position of the sample during multiple-exposure.     

Spectral property and its shape transition on ^72-84Kr isotopes in microscopic core plus two-quasiparticle approach

By using a microscopic sdIBM-2 2q.p, approach, the levels of the ground-band, 7-band and partial two-quasi-particle bands for ^72-84Kr isotopes are calculated. The data obtained are in good agreement with the recent experimental results, and successfully reproduce the nuclear shape phase transition of ^72-S4Kr isotopes at zero temperature.The ground-state band is described successfully up to J^π=18^ and Ex=10.0MeV. Based on this model, the aligned requisite minimum energy has been deduced. The theoretical calculations indicate that no distinct change of nuclear states is caused by the abruptly broken pair of a boson, and predict that the first backbending of Kr isotopes may be the result of aligning of two quasi-neutrons in orbit g9/2, which galus the new experimental support of the measurements of g factors in the ^78-86Kr isotopes.     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法，以乙二胺为前驱液，在沉积有铁催化剂的p型硅（111）基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右，直径在50—100nm之间，具有明显的“竹节状”结构，结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试：外加电场为1.4V/μm，观察到20?μA /cm2发射电流，外电场升至2.54V/μm时发射电流达到1.280mA/cm2，在较高外电场下，没有发现电流“饱和”.这比 关键词： CNx纳米管 高温热解 “竹节状”结构 场致发射     

TATB钝感炸药的小角X射线散射实验

在北京同步辐射装置上应用同步辐射X射线小角散射技术研究TATB样品微孔状况，分析了微孔结构参数的变化。采用不同制备工艺(机械研磨、化学合成、气流细化、全结晶、粉碎)和不同存放时间的TATB粉末样品共计7份。     

一般组合弹性结构的数学模型

研究由任意多个体、板、梁构成的一般组合弹性结构静态问题. 通过最小势能原理和虚功原理建立问题在向量表示下的数学模型. 在获得了一般组合弹性结构上的广义Korn不等式后, 利用Lax-Milgram引理证明了模型的唯一可解性. 在对解做合理的正则性假设的条件下, 由相应变分形式导出向量表示下的所有平衡方程, 并得到了一个对该问题进行有限元分析时有重要作用的恒等式.     

关于Banach空间中凸泛函的广义次梯度不等式

本文在前人^[1,2]的基础之上，以凸泛函的次梯度不等式为工具，将Jensen不等式推广到Banach空间中的凸泛函，导出了Banach空间中的Bochner积分型的广义Jensen不等式，给出其在Banach空间概率论中某些应用，从而推广了文献[3—6]的工作．     

高能、超短脉冲、可调谐激光器用掺镱氟磷酸盐玻璃研究进展

Yb^3 与其它稀土离子相比有最简单的能级结构，这使它具有一些独特的性质，如避免激发态吸收，消除上转换和浓度猝灭等，因此它是高能输出激光器介质的理想掺杂离子。氟磷玻璃综合了氟化物玻璃和磷酸盐玻璃的优点，可降低磷酸盐的声子能量，改善其易吸湿性；提高氟化物玻璃的物理化学性能等，这使它成为稀土掺杂可调谐光纤激光器的很好的掺杂介质。众多研究表明，Yb^3 掺杂氟磷玻璃是一种很有前途的激光工作物质。本文总结了Yb^3 掺杂氟磷玻璃的特点，性质，结构及存在的问题。     

利用全息扫描技术实现条码识别

根据条码识别装置的特点，利用全息扫描技术设计条形码扫描器及相应的辅助部件，从而使学生对全息照相及扫描技术有进一步的理解，掌握物理实验设计的一般要求。     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.