HSLA-80/100钢的焊接

对ＨＳＬＡ－８０／１００钢的焊接性、焊接材料及焊接工艺进行了综述，并指出了现存在的主要问题。     

复电阻率测井方法及其应用

复电阻率测井是以两频或多频测量地层电阻率的新方法 ,它可用来有效地识别油气层和确定水淹油层的水淹程度。简要介绍了复电阻率测井的测量原理、仪器设计。胜利油田 9口井的现场测井资料初步验证了该方法的可行性和有效性     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

微波BJT超宽带低噪声放大器的设计

本文给出了一种频带覆盖达１０－１６００ＭＨｚ的微波ＢＪＴ超宽带低噪声放大器的设计方法，从微波ＢＪＴ的噪声模型出发，通过拟合５０Ω源阻抗下微波ＢＪＴ的噪声系数ＮＦ５０和Ｓ参数来提取其噪声参数，然后根据增益，噪声及驻波比要求优化设计放大器，使放大器在超宽带范围内获得平坦增益和低噪声，本文所给出的微波ＢＪＴ惨数提取及放大器优化设计方法已由实验结果所验证。     

Sunflower Head Residue Pectin Extraction as Affected by Physical Conditions

Effects of extraction pH, temperature, and time on yield and quality of pectin from sunflower heads (Interstate cultivar) were investigated. The low-methoxyl pectin was extracted, using 0.75% sodium hexametaphosphate at pH 3, 4, and 5 and at 75, 85, and 95°for 20, 40, and 60 min, respectively. Yield, molecular mass, and firmness of jellies of the pectins were determined. Three-way statistical analysis on yield, molecular mass and gel firmness showed strong interactions among pH, temperature and time. Highest yields were obtained at pH 5, 95°for 20 min and pH 4, 85°for 40 min. Pectin extracted for 40 min at pH 3 and 4 and at 85°and 75°C, respectively, had the highest molecular mass. Gel firmness of sunflower pectin prepared at pH 5.4 was higher than that of a commercial citrus pectin.     

高频等参数感应(ВИКИЗ)测井技术应用

介绍了高频等参数感应的基本原理。以胜利油田比较典型的 3口井为例 ,详细分析了高频感应资料在划分薄夹层、确定储层流体饱和类型、评价储层电阻率空间分布等方面的应用。研究结果表明 ,高频感应具有极高的纵向分辨率和较好的径向探测特性 ,能够准确计算地层真电阻率、侵入带电阻率及侵入半径 ,通过与常规感应及薄层测井资料的对比 ,论证了高频等参数感应在测井技术应用上的优越性     

耐高温微生物驱油提高低渗透油藏采收率先导性试验

胜利油田东辛高温低渗透油藏含蜡高,常温微生物无法存活,针对这一问题,引进美国NPC公司耐高温菌种,在Y6-16井组开展高温低渗油藏微生物驱油提高采收率研究和现场试验。施工后Y6-16井日增注52m3,表皮系数由施工前的2.069减小为施工后的-6.31,油层污染得到较好改善;原油含蜡量、胶质沥青质含量降低,轻质组分增加,重质组分降低;井组采收率提高5.09个百分点。     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Effect of Additives on Magnetic Properties of High Frequency MnZn Power Ferrite

In keeping with the advance of more compact and more power-saving electronic equipment, the demand is increasing for smaller and more efficient switching power supply. Therefore, it is necessary to provide the adequate magnetic power ferrite materials to satisfy the demand. Such ferrite materials have to meet the following main requirement: 1) high initial permeability (μ i ); 2) high saturation magnetic induction (Bs); 3) high Curie temperature (Tc); 4) high electrical resistivity (ρ ); 5)…