初轧机主传动系统扭转自激振动的稳定性

用变量摄动法对初轧机主传动系统扭转自激振动的稳定性进行了初步研究，讨论了稳定性条件，为初轧机打滑状态的诊断、监测提供了参考依据。     

HIST: A hierarchical self test methodology for chips,boards, and systems

This article presents the HIST approach, which allows the automated insertion of self test hardware into hierarchically designed circuits and systems to implement the RUNBIST instruction of the IEEE 1149.1 standard. To achieve an optimal and throughout self testable system, the inherent design hierarchy is fully exploited. All chips and boards are provided with appropriate test controllers at each hierarchy level. The approach is able to detect all those faults, which are in the scope of the underlying self test algorithms. In this paper the hierarchical test architecture, the test controllers as well as all necessary synthesis procedures are presented. Finally a successful application of the HIST approach to a cryptography processor is described.     

水工自密实混凝土的设计及应用

自密实混凝土具有高流态、免振等特性,适用于体形复杂、钢筋密集等难以浇筑的特殊部位。介绍了水工自密实混凝土的设计要求、思路及配合比参数选定方法。以三峡二期工程左岸厂房坝段压力钢管外包混凝土为例,给出了水工自密实混凝土的具体设计及应用。该项技术具有较好的推广应用前景。     

铁铝酸盐复合膨胀水泥化学预应力机理及其应用研究

本文阐述铁铝酸盐自应力混凝土的主要物理力学特征.研究了限制膨胀应变与配筋率之间的定量函数关系.通过正交试验和方差分析,确定了复合外加剂对其性能的影响.针对其在自应力管中的应用,提出多层中空圆柱理论计算模型,按弹性理论计算出自应力管初始应力分布规律.对比以前的线性理论计算误差,给出相应的修正系数.本文对类似的自应力混凝土,具有普遍的指导意义.     

矿区复杂地质条件下隧洞围岩塌方处理

主要介绍金堆城东川河改道工程隧洞施工过程中出现的一次较大塌方治理，塌方体松散并含孤石，传统方法无法处理，根据塌方体的特点，有针对性地采取自钻式锚杆、固结灌浆等施工工艺，并获得成功；对隧洞衬砌、地表陷坑进行了处理，确保了工程安全、质量。同时根据矿区隧洞围岩复杂多变的特点，对后期隧洞施工提出了建议。     

用PIXE方法研究骨折家兔骨骼微量元素的变化

用质子激发X荧光分析法测定48只家兔在挠骨骨折愈合过程中骨骼中多种微量元素含量的变化。结果表明，Fe和Sr分别呈鼓凸形和下凹形规律性变化，故Fe和Sr含量的变化可作为骨折愈合过程的指示剂。在骨折愈合过程中发现骨骼和血液中元素钙的相对含量保持不变，故无法为西医用补充钙来治疗骨折的疗法提供依据，但我们的研究结果却表明中医补充微量元素治疗骨折的疗法是有道理的。     

自密实混凝土重力坝浇筑层间稳定性分析研究

自密实混凝土重力坝是用流动性较强的混凝土在堆石之间填充并分层浇筑而成。为了研究浇筑层间的稳定性,采用刚体平衡原理和第三强度理论分别对自密实混凝土重力坝层间的抗滑稳定性和堆石间拉力情况进行了分析研究。结果表明：随着坝体层间堆石相对接触面积α的增大,层间抗滑稳定系数K逐渐增大,但是增加的幅度处在一个稳定的范围之内;随着堆石相对超出高度β的增大,堆石间的拉力逐渐增大,β=15%可以作为自密实混凝土重力坝设计的上限值;地震工况对于坝体层间抗滑稳定系数K和堆石间拉力大小的影响较大,该工况抗滑稳定系数K减小了15%以上,堆石间拉力最大增大约2 MPa。     

Interpreting the negative mood-helping literature via "mega"-analysis: A contrary view.

"Mega"-analysis was developed by M. Carlson and N. Miller (see record 1987-31249-001) as an extension of traditional meta-analytic procedures for conducting integrative reviews of existing research literatures. One such mega-analysis was conducted by Carlson and Miller to synthesize the literature on the relation between negative mood states and helping. That analysis found no support for a theoretical account (negative state relief) that had been confirmed previously by using various experimental approaches. In an attempt to reconcile the discrepancy, the logic and methods used in Carlson and Miller's mega-analysis of the negative mood-helping literature were examined, and several serious problems were found. These problems are discussed, and data are presented to show that the results of that mega-analysis, and perhaps all mega-analyses, should not be viewed with confidence. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

基于SoC的嵌入式DRAM存储器内建自测试设计

内建自测试(Built-in Self Test,BIST)是测试片上系统(System on- Chip,SoC)中嵌入式存储器的重要技术;但是,利用BIST技术采用多种算法对嵌入式存储器进行测试仍面临诸多挑战;对此,提出了一种基于SoC的可以带有多种测试算法的嵌入式DRAM存储器BIST设计,所设计的测试电路可以复用状态机的状态,利用循环移位寄存器(Cyclic Shift Register,CSR)产生操作命令,利用地址产生电路产生所需地址;通过对3种BIST电路支持的算法,全速测试,面积开销3个方面的比较,表明提出的嵌入式DRAM存储器BIST设计在测试时间,测试故障覆盖率和测试面积开销等各方面都取得了较好的性能.     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.