Hydroliquefaction of low-sulfur coals using iron carbonyl complexes—Sulfur as catalysts

Hydroliquefaction of low-sulfur Australian coals (Wandoan and Yallourn) was studied using iron carbonyl complexes as catalyst. The addition of Fe(CO)₅ (2.8 wt% Fe of coal) increased coal conversion from 48.6 to 85.2% for Wandoan coal, and from 36.7 to 69.7% for Yallourn coal in 1-methylnaphthalene at 425°C under an initial hydrogen pressure of 50 kg cm^?2. When molecular sulfur was added to iron carbonyls (Fe(CO)₅, Fe₂(CO)₉ and Fe₃(CO)₁₂), higher coal converions ( > 92%) and higher oil yields (>46%) were obtained, along with an increase in the amount of hydrogen transferred to coal from the gas phase (0.2 to 2.8%, d.a.f. coal basis). In the liquefaction studies using a hydrogen donor solvent, tetralin, Fe(CO)₅S catalyst increased the amount of hydrogen absorbed from the gaseous phase and decreased the amount of naphthalene dehydrogenated from tetralin. The direct hydrogen transfer reaction from molecular hydrogen to coal fragment radicals seems to be a major reaction pathway. Organic sulfur compounds, dimethyldisulfide and benzothiophene, and inorganic FeS₂ and NiS were found to be good sulfur sources to Fe(CO)₅. From X-ray diffraction analyses of liquefaction residues, it is concluded that Fe(CO)₅ was converted into pyrrhotite (Fe_1?xS) when sulfur was present, but into Fe₃O₄ in the absence of sulfur.     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

A novel method of suppressing the inrush current of transformers by using a series‐connected voltage‐source PWM converter

This paper proposes a novel method of suppressing the inrush current of transformers. A small‐rated voltage‐source PWM converter is connected in series to the transformers through a matching transformer. As the connected PWM converter serves as a resistor for the source current, no inrush phenomena occurs. The required rating of the PWM converter, which serves as the damping resistor for the inrush phenomena, is 1/400 that of the main transformers in single‐phase circuits. In three‐phase circuits, it is 1/900. The basic principle of the proposed method is discussed. Digital computer simulation is implemented to confirm the validity and excellent practicability of the proposed method using the PSCAD/EMTDC. A prototype experimental model is constructed and tested. The experimental results demonstrate that the proposed method can perfectly suppress the inrush phenomena. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 157(4): 56–65, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20174     

Loss distribution measurement of silica-based waveguides by using ajaggedness-free optical low coherence reflectometer

The loss distributions in silica-based waveguides are successfully measured using a jaggedness-free optical reflectometer (OLCR). The OLCR reduces jagged fluctuations which appear in Rayleigh backscattering measurements undertaken with conventional OLCRs to within ±1 dB by averaging the wavelength-dependent Rayleigh backscatter signals. Constant loss distributions and a step-like loss increase in the waveguides were clearly observed     

Improved performance of subcarrier multiplexed multichannel AM-VSBvideo signal transmission using Pr3+-doped fluoride fibreamplifier

The performance of 40 channel AM-VSB video signal transmission using a Pr³⁺-doped fluoride fibre amplifier (PDFA) was examined. The PDFA improves the loss budget by 10 dB for 52 dB CNR, and distortion levels almost satisfy the CATV trunk line specifications. The video quality degradation after PDFA amplification was `imperceptible' in subjective tests     

Molecular cloning of a novel melanocortin receptor

Using the technique of the polymerase chain reaction primed with oligonucleotides based on the homologous transmembrane regions of seven transmembrane G protein-linked receptors, we isolated three full-length human genes that encode a novel subgroup of this receptor family. Recently, two of these receptors were identified as specific for alpha-melanocyte-stimulating hormone (alpha-MSH) and adrenocorticotropic hormone. We report the molecular cloning and pharmacologic characterization of a third member of this subgroup. The gene for this receptor encodes a protein of 361 amino acids in length. Its pharmacology characterizes it as an MSH receptor specific to the heptapeptide core common to adrenocorticotropic hormone and alpha-, beta-, and gamma-MSH. By Northern blot hybridization and polymerase chain reaction, it is expressed in brain, placental, and gut tissues but not in melanoma cells or in the adrenal gland. These findings may yield insight into the physiology of peptides derived from pro-opiomelanocortin post-translational processing.     

In-plane transport properties of Si/Si1-xGexstructure and its FET performance by computer simulation

Transport properties of ungated Si/Si_1-xGe_x are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering limited mobility is enhanced over bulk Si, and is found to reach 23000 cm²/Vs at 77 K and 4000 cm²/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transconductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%     

Correlates and prognosis in relation to intellectual dysfunction in a community-residing elderly population

To estimate the risk factors for intellectual dysfunction and examine its prognosis in a community-residing (non-institutionalized) elderly population, a randomly selected sample of 1,473 elderly people aged 65 years and over living in S city, Osaka Prefecture, was studied in October 1992, and data were obtained from 1,383, a response rate of 93.9%. A cohort of 1,383 was followed for 42 months and follow-up was completed for 1,300 (94.0%). The main results were as follows: 1) The prevalence of intellectual dysfunction did not differ significantly between sexes, and there was an increasing prevalence of intellectual dysfunction with age in both sexes. The prevalence of severe intellectual dysfunction was found to increase highly at age 85 and over. 2) By univariate analysis, odds ratios for age older than 75 years, low Activities of Daily Living (ADL), urinary and fecal incontinence, and no participation in social activities were significantly higher than 1 in any level of mild, moderate, and severe intellectual dysfunction. In the multivariate analysis using logistic regression, age older than 75 years and urinary and fecal incontinence showed significant higher odds ratios than 1 for severe intellectual dysfunction, and low ADL and treatment for hypertension also showed significant higher odds ratios than 1 for moderate intellectual dysfunction. 3) From analysis using the Kaplan-Meier method, the cumulative survival rates decreased with a decline in intellectual functioning in both age groups of 65-74 and 75 years and older. 4) Application of the Cox proportional hazards model resulted in adjusted hazard ratio for severe intellectual dysfunction of 1.79 (95% confidence interval, 1.02-3.12), controlling for other factors such as sex, age, general health status, incontinence and social activities.     

A 64-Mb DRAM with meshed power line

A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t_RAS=50 ns (typical) at V_cc=3.3 V, and 16-b input/output (I/O). This MPL+qDSAD scheme can reduce sensing delay caused by the metal layer resistance. Furthermore, to suppress crosstalk noise, a V_SS shield peripheral layout scheme has been introduced, which also widens power line widths. This 64-Mb DRAM was fabricated with 0.4-μm CMOS technology using KrF excimer laser lithography. A newly developed memory cell structure, the tunnel-shaped stacked-capacitor cell (TSSC), was adapted to this 64-Mb DRAM