均匀设计法分析制备过程对钴钼硫化物催化剂机械强度的影响

建立了CoMoP/Al2O3加氢精制催化剂机械强度及其可靠性在制备过程中的数学模型,采用均匀设计考察了浸渍、干燥、煅烧、硫化4个制备过程中,浸渍时间、干燥温度、干燥时间、煅烧温度、煅烧时间、硫化温度和硫化升温速率7个实验因子对催化剂强度均值、Weibull模量的影响,同时考察了这些因素对颗粒密度的影响。方差分析表明所有模型都是充足的。实验结果表明,硫化过程是影响催化剂强度均值的主要过程。在实验范围内提高硫化温度、降低硫化时的升温速率有利于提高催化剂的强度。影响催化剂Weibull模量的因素主要为各个制备过程的交互效应。要提高催化剂强度的可靠性就必须全面考虑催化剂制备的各个过程,特别是各个制备过程的交互效应。     

Quasi-Chun-Ching Shih''''s Fractional Fourier Transform with Periodicity of 2,3 and M

Based on Chun-Ching Shih's idea, the basic transform was substituted and the quasi-ChunChing Shih's fractional Fourier transform with periodicity of 2, 3 and M was deduced. The two former transforms and the Chun-Ching Shih's fractional Fourier transform were only the particular cases of quasiChun-Ching Shih's fractional Fourier transform with periodicity of M.     

Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator

The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.     

电接点压力表补水泵定压系统的应用

阐述了电接点压力表补水泵定压系统的一些应用问题 ,给出了电接点压力表定压点的上、下限计算公式 ,并提出了该系统补给水泵、补给水箱及安全阀的设计选型方法     

Viterbi译码器的硬件实现

介绍了一种Vkerbi译码器的硬件实现方法。设计的基于硬判决的Viterbi译码器具有约束长度长（9)、译码深度深（64)的特点。为了兼顾硬件资源与电路性能两个方面，在设计中使用了4个ACS单元，并根据Xilinx Virtex系列FPGA的结构特点．利用FPGA内部的BlockRAM保存汉明距离和幸存路径，提高了译码速度。     

粘土矿物对低渗透储层性质的影响——以鄂尔多斯盆地三叠系低渗透储层为例

粘土矿物是低渗砂岩储层的主要胶结物，对储层物性及开发过程中储层物性变化趋势有着重要的影响和控制作用。另外，粘土矿物也蕴含着大量沉积环境介质的物理化学信息，认识其自然规律，可以有效地指导预测有利储层，认识和改造油层。以鄂尔多斯盆地砂岩储层中的粘土矿物为研究对象，探讨分析粘土矿物对低渗储层性质的影响，该研究对含油气盆地低渗储层有效开发具有一定的参考价值。     

Microstructure and Mechanical Properties of Heat-treated GeSb_2Te_4 Thin Films

The effect of annealing on microstructure,adhesive and frictional properties of GeSb 2 Te 4 films were experimentally studied.The GeSb 2 Te 4 films were prepared by radio frequency(RF)magnetron sputtering,and annealed at 200℃and 340℃under vacuum circumstance,respectively.The adhesion and friction experiments were mainly conducted with a lateral force microscope(LFM)for the GeSb 2 Te 4 thin films before and after annealing.Their morphology and phase structure were analyzed by using atomic force microscopy(AFM)and X-ray Diffraction(XRD)techniques,and the nanoindention was employed to evaluate their hardness values.Moreover,an electric force microscope(EFM)was used to measure the surface potential. It is found that the deposited GeSb 2 Te 4 thin film undergoes an amorphous-to-fcc and fcc-to-hex structure transition;the adhesion has a weaker dependence on the surface roughness,but a certain correlation with the surface potential of GeSb 2 Te 4 thin films.And the friction behavior of GeSb 2 Te 4 thin films follows their adhesion behavior under a lower applied load.However,such a relation is replaced by the mechanical behavior when the load is relatively higher.Moreover,the GeSb 2 Te 4 thin film annealed at 340℃presents a lubricative property.     

中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀

多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时，应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺，如果SiO2膜应用硅靶反应磁控溅射工艺，存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工，做了大量实验、质谱分析和多项测试研究，成功地实现反应溅射SiO2膜与ITO膜在线联镀，做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。     

ZnO压敏陶瓷最佳掺杂含量的理论计算

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果，应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。     

一种改进的基于OOC的MWOOC

从理论上分析了一种基于光正交码（OOC）的多波长光正交码（MWOOC）的性能。给出了一种改进的基于OOC的MWOOC，并且蛤体分析了它的性能。与原MWOOC比较，改进的MWOOC的误码率性能基本相同，但码字数增加很多。