Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

A simple mathematical analysis on the effect of sand in Cr(VI) reduction using zero valent iron

A simple mathematical model was proposed to analyze the enhancement of Cr(VI) reduction when sand materials are added to the zero valent iron (ZVI). Natural decay of Cr(VI) in a control experiment was analyzed by using a zero-order decay reaction. Adsorption kinetics of Cr(VI) to sand was modeled as a first-order reversible process, and the reduction rate by ZVI was treated as a first-order reaction. Natural decay of Cr(VI) was also included in other experiments, i.e., the adsorption to sand, the reduction by ZVI, and both adsorption and reduction when sand and ZVI are present together. The model parameters were estimated by fitting the solution of each model to the corresponding experimental data. To observe the effect of sand addition to ZVI, both adsorption and reduction rate models were considered simultaneously including the natural decay. The solution of the combined model was fitted to the experimental data to determine the first-order adsorption and reduction rate constants when sand as well as ZVI is present. The first-order reduction rate constant in the presence of sand was about 35 times higher than that with ZVI only.     

交流变频调速采用“△”脉宽调制的参数选择

本文在增量调制的原理基础上,对“△”脉宽调制的原理及实质进行了实验分析与研究。从理论上论证了“△”调制方案的合理性。通过实验对“△”调制所提供的满足变频调速要求的控制特性及设计思想的可行性进行了验证。着重对参数选择进行了实验分析,指出了参数选择的观点及其依据。按本文的观点选择参数,在工程应用中是切实可行的。     

Effects of surfactant/silica and silica/cerium ratios on the characteristics of mesoporous Ce-MCM-41

Using the surfactant CTMABr (cetyltrimethyl ammonium bromide) and cerium(IV) sulfate, mesoporous Ce-MCM-41 molecular sieves were produced under a hydrothermal condition with various surfactant/silica (surfactant/Si) and silica/cerium (Si/Ce) ratios. Changes to the structural traits caused by changing the molar ratios of both surfactant/Si and Si/Ce were investigated. XRD (X-ray diffraction), FT-IR (fourier transform infrared spectroscopy), and SEM (scanning electro microscopy) were used for the characterization of prepared mesoporous samples. Among the tested molar ratios, surfactant/Si ratio of 0.5 and 0.2 showed highest values of d_1 0 0 and intensity, respectively, for the Si-MCM-41. XRD analysis also identified a quintessential hexagonal structure of Ce-MCM-41 for the Si/Ce molar ratio higher than 40 (maintaining the surfactant/Si ratio at 0.2). When cerium content was increased to have the Si/Ce molar ratio of 20, the hexagonal structure of Ce-MCM-41 was collapsed due to the structural stress of substituted cerium. FT-IR results confirmed calcination of Ce-MCM-41 and the incorporation of Ce⁴⁺ ions of cerium sulfate into the silica surface with proper removal of the surfactant. Rod-like shape with rounded edges of the prepared Ce-MCM-41 samples was identified by SEM. These results suggest surfactant/Si ratio of 0.2 and Si/Ce ratio of 40 for the production of Ce-MCM-41 with the highest level of crystallinity.     

提高开卷线纵剪机精度的研究

通过对纵剪机右立柱轴承间隙测量方法和左立柱导向结构的改进，保证了加工精度，易于操作，提高了生产效率。     

汽车漆漆膜质量的改进与提高

通过对车身漆膜质量问题的分析,采取专业清洁公司整体承包车间保洁、工艺方面改进、更换生产外材料、供应商加强对汽车漆使用的监控等一系列措施,漆膜质量水平得以提高.     

Collision-Free Interleaver Composed of a Latin Square for Parallel-Architecture Turbo Codes

In parallel-architecture turbo codes, the constituent interleavers must avoid memory collision. This paper proposes a collision-free interleaver structure composed of a Latin square (LS) and pre-designed interleavers. Our proposed interleavers can be easily optimized for various information block sizes and for various degrees of parallelism. Their performances were evaluated by computer simulation.     

烧结成品运输自动控制系统的改进

对烧结成品运输自控系统不稳定性因素进行了分析，提出了采取优化硬件外围工作环境，完善软件保护程序等改进措施。改进后的自控系统稳定性明显提高。