Erratum to: Minimizing total tardiness on parallel machines with preemptions

In this note, we correct a mistake which was made in the paper “Minimizing Total Tardiness on Parallel Machines with Preemptions” (see J Schedul 15:193–200, 2012).     

Electron cryo-microscopy of biological specimens on conductive titanium-silicon metal glass films

Thin films of the metal glass Ti88Si12 were produced by evaporation and characterized by AFM and conductivity measurements. Thin Ti88Si12 support films for electron microscopy were prepared by coating standard EM grids with evaporated films floated off mica, and characterized by electron imaging and electron diffraction. At room temperature, the specific resistance of a thin TiSi film was 10(6) times lower than that of an amorphous carbon film. At 77K, the specific resistance of TiSi films decreased, whereas that of carbon became immeasurably high. The effective scattering cross-section of TiSi and amorphous carbon for 120 kV electrons is roughly equal, but TiSi films for routine use can be approximately 10 times thinner due to their high mechanical strength, so that they would contribute less background noise to the image. Electron diffraction of purple membrane on a TiSi substrate confirmed that the support film was amorphous, and indicated that the high-resolution order of the biological sample was preserved. Electron micrographs of TiSi films tilted by 45 degrees relative to the electron beam recorded at approximately 4 K indicated that the incidence of beam-induced movements was reduced by 50% compared to amorphous carbon film under the same conditions. The success rate of recording high-resolution images of purple membranes on TiSi films was close to 100%. We conclude that TiSi support films are ideal for high-resolution electron cryo-microscopy (cryo-EM) of biological specimens, as they reduce beam-induced movement significantly, due to their high electrical conductivity at low temperature and their favorable mechanical properties.     

Determination of absolute emission cross sections for electron-impact-induced line radiation in the vacuum ultraviolet

A method and an experimental setup have been developed for measuring absolute photoemission cross sections for electron-impact-induced line radiation in the vacuum ultraviolet (VUV). Unparalleled low uncertainties for the cross sections were achieved mainly from the use of the Berlin electron storage ring as a primary standard source in the VUV for the determination of the responsivity of the spectrometer-detector system used and from the use of a spinning rotor gauge as a secondary standard for the determination of the target gas density. As the first result we present a photoemission cross section for the Ar II 3s3p(6)(2)S(?)-3s(2)3p(5)(2)p?(3/2) transition at 91.98 nm for 2-keV electron-impact energy of 1.167 × 10(-18) cm(2) with a relative uncertainty of 4.4% (√3σ value). This low uncertainty demonstrates the suitability of the setup for further cross-section measurements.     

Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope

Profiling of the electrical properties of nanowires (NWs) and NW heterocontacts with high spatial resolution is a challenge for any application and advanced NW device development. For appropriate NW analysis, we have established a four-point prober, which is combined in vacuo with a state-of-the-art vapor-liquid-solid preparation, enabling contamination-free NW characterization with high spatial resolution. With this ultrahigh-vacuum-based multi-tip scanning tunneling microscopy (MT-STM), we obtained the resistance and doping profiles of freestanding NWs, along with surface-sensitive information. Our in-system 4-probe STM approach decreased the detection limit for low dopant concentrations to the depleted case in upright standing NWs, while increasing the spatial resolution and considering radial depletion regions, which may originate from surface changes. Accordingly, the surface potential of oxide-free GaAs NW {112} facets has been estimated to be lower than 20 mV, indicating a NW surface with very low surface state density.

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High-resolution venography of the brain using magnetic resonance imaging

The purpose of this study was to evaluate a non-flow related magnetic resonance imaging method to visualize small veins independent of arteries in the human brain. A long TE, high-resolution 3D gradient echo MR acquisition was used to highlight venous information. The method is based on the paramagnetic property of deoxyhemoglobin and the resulting phase difference between veins and brain parenchyma at long echo times. The MR magnitude images were masked with a phase mask filter to enhance small structure visibility.. Venous information down to sub-pixel vessel diameters of several hundred microns is visible. Venous data are displayed in an angiographic manner using a minimum intensity projection algorithm. Both superficial veins and deep white matter veins are visible. The method has been successfully applied in volunteers. Preliminary results in patients with cerebral arteriovenous malformations indicate its potential in clinical applications. The proposed method is easy to implement and does not require administration of a contrast agent or application of specially designed rf pulses to highlight the veins. Rather it exploits the intrinsic magnetic properties (BOLD-effect) and the prolonged T ^_2* of venous blood. The method may be of diagnostic potential in the assessment of arteriovenous malformations or other vascular venous lesions. © 1998 Elsevier Science B.V. All rights reserved.     

Pressure dependence of superconductivity in Ba4C60

In Ba_xC₆₀ superconductivity (sc) at T_c=(6.8±0.2) K is associated with the x=4 phase. Here we present pressure studies of T_c of a Ba_xC₆₀ sample (dT_c/dp= –1.9 K/GPa) which exhibits a large volume fraction of the x=4 phase. In the alkali-fullerides K₆₀C₆₀ and Rb₃C₆₀ T_c is governed by the electronic density of states N(E_F) (T_c exp{–1/N(E_F)V}). The dependence of N(E_F) on volume can be approximated by N(E_F)=N₀ d _eff ³, where d_eff is the surface to surface distance of neighboured C₆₀-molecules. This relationship is corroborated by (T_C,d)-data of various compounds of the form A_3–xB_xC₆₀ (A: K, Rb; B: K, Rb, Cs; x2). Strong deviation from this behavior is found for the alkaline-fulleride superconductor Ba₄C₆₀. This deviation is attributed to the hybridization of alkaline-metal s-, d-states and C₆₀ -states.     

Combination problems for commutative/monoidal theories or how algebra can help in equational unification

We study the class of theories for which solving unification problems is equivalent to solving systems of linear equations over a semiring. It encompasses important examples like the theories of Abelian monoids, idempotent Abelian monoids, and Abelian groups. This class has been introduced by the authors independently of each other as commutative theories (Baader) and monoidal theories (Nutt).We show that commutative theories and monoidal theories indeed define the same class (modulo a translation of the signature), and we prove that it is undecidable whether a given theory belongs to it. In the remainder of the paper we investigate combinations of commutative/monoidal theories with other theories. We show that finitary commutative/monoidal theories always satisfy the requirements for applying general methods developed for the combination of unification algorithms for disjoint equational theories.Then we study the adjunction of monoids of homomorphisms to commutative/monoidal theories. This is a special case of a non-disjoint combination, which has an algebraic counterpart in the corresponding semiring. By studying equations over this semiring, we identify a large subclass of commutative/monoidal theories that are of unification type zero. We also show with methods from linear algebra that unitary and finitary commutative/monoidal theories do not change their unification type when they are augmented by a finite monoid of homomor-phisms, and how algorithms for the extended theory can be obtained from algorithms for the basic theory.     

Parallel machine problems with equal processing times: a survey

The basic scheduling problem we are dealing with is the following. There are n jobs, each requiring an identical execution time. All jobs have to be processed on a set of parallel machines. Preemptions can be either allowed or forbidden. The aim is to construct a feasible schedule such that a given criterion is minimized. In this paper, we survey existing approaches for the problem class considered.     

Study on TSV isolation liners for a Via Last approach with the use in 3D-WLP for MEMS

This paper discusses approaches for the isolation of deep high aspect ratio through silicon vias (TSV) with respect to a Via Last approach for micro-electro-mechanical systems (MEMS). Selected TSV samples have depths in the range of 170…270 µm and a diameter of 50 µm. The investigations comprise the deposition of different layer stacks by means of subatmospheric and plasma enhanced chemical vapour deposition (PECVD) of tetraethyl orthosilicate; Si(OC₂H₅)₄ (TEOS). Moreover, an etch-back approach and the selective deposition on SiN were also included in the investigations. With respect to the Via Last approach, the contact opening at the TSV bottom by means of a specific spacer-etching method have been addressed within this paper. Step coverage values of up to 74 % were achieved for the best of those approaches. As an alternative to the SiO₂-isolation liners a polymer coating based on the CVD of Parylene F was investigated, which yields even higher step coverage in the range of 80 % at the lower TSV sidewall for a surface film thickness of about 1000 nm. Leakage current measurements were performed and values below 0.1 nA/cm² at 10 kV/cm were determined for the Parylene F films which represents a promising result for the aspired application to Via Last MEMS-TSV.     

Continuous-time quantum Monte Carlo impurity solvers

Continuous-time quantum Monte Carlo impurity solvers are algorithms that sample the partition function of an impurity model using diagrammatic Monte Carlo techniques. The present paper describes codes that implement the interaction expansion algorithm originally developed by Rubtsov, Savkin, and Lichtenstein, as well as the hybridization expansion method developed by Werner, Millis, Troyer, et al. These impurity solvers are part of the ALPS-DMFT application package and are accompanied by an implementation of dynamical mean-field self-consistency equations for (single orbital single site) dynamical mean-field problems with arbitrary densities of states.

Program summary

Program title: dmftCatalogue identifier: AEIL_v1_0Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEIL_v1_0.htmlProgram obtainable from: CPC Program Library, Queen's University, Belfast, N. IrelandLicensing provisions: ALPS LIBRARY LICENSE version 1.1No. of lines in distributed program, including test data, etc.: 899 806No. of bytes in distributed program, including test data, etc.: 32 153 916Distribution format: tar.gzProgramming language: C++Operating system: The ALPS libraries have been tested on the following platforms and compilers:

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  Linux with GNU Compiler Collection (g++ version 3.1 and higher), and Intel C++ Compiler (icc version 7.0 and higher)

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  MacOS X with GNU Compiler (g++ Apple-version 3.1, 3.3 and 4.0)

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  IBM AIX with Visual Age C++ (xlC version 6.0) and GNU (g++ version 3.1 and higher) compilers

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  Compaq Tru64 UNIX with Compq C++ Compiler (cxx)

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  SGI IRIX with MIPSpro C++ Compiler (CC)

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  HP-UX with HP C++ Compiler (aCC)

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  Windows with Cygwin or coLinux platforms and GNU Compiler Collection (g++ version 3.1 and higher)

RAM: 10 MB–1 GBClassification: 7.3External routines: ALPS [1], BLAS/LAPACK, HDF5Nature of problem: (See [2].) Quantum impurity models describe an atom or molecule embedded in a host material with which it can exchange electrons. They are basic to nanoscience as representations of quantum dots and molecular conductors and play an increasingly important role in the theory of “correlated electron” materials as auxiliary problems whose solution gives the “dynamical mean field” approximation to the self-energy and local correlation functions.Solution method: Quantum impurity models require a method of solution which provides access to both high and low energy scales and is effective for wide classes of physically realistic models. The continuous-time quantum Monte Carlo algorithms for which we present implementations here meet this challenge. Continuous-time quantum impurity methods are based on partition function expansions of quantum impurity models that are stochastically sampled to all orders using diagrammatic quantum Monte Carlo techniques. For a review of quantum impurity models and their applications and of continuous-time quantum Monte Carlo methods for impurity models we refer the reader to [2].Additional comments: Use of dmft requires citation of this paper. Use of any ALPS program requires citation of the ALPS [1] paper.Running time: 60 s–8 h per iteration.References:

• [1] 

  A. Albuquerque, F. Alet, P. Corboz, et al., J. Magn. Magn. Mater. 310 (2007) 1187.

• [2] 

  http://arxiv.org/abs/1012.4474, Rev. Mod. Phys., in press.