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Semenov Yu. S. Gorupakha V. V. Kuznetsov A. M. Semion I. Yu. Schumel’chik E. I. Vashchenko S. V. Khudyakov A. Yu. 《Metallurgist》2020,63(9-10):1013-1023
Metallurgist - The paper discusses the experience gathered at the Yenakievo metallurgical plant and Dnepr metallurgical complex with respect to using manganese-containing materials in the... 相似文献
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Vashchenko S.V. Khudyakov A.Yu. Baiul K.V. Semenov Yu.S. 《Powder Metallurgy and Metal Ceramics》2021,60(3-4):247-256
Powder Metallurgy and Metal Ceramics - The mechanisms of phase interactions in granular media were studied to elaborate the results obtained previously at the Nekrasov Iron and Steel Institute of... 相似文献
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G. V. Stepanov A. P. Vashchenko V. I. Zubov V. M. Tokarev É. G. Safarov 《Strength of Materials》1989,21(2):199-202
1. | With an increase in pure shear deformation rate to 105 sec–1 the strength of caprolon increases while the plasticity drops. |
2. | The experimental results indicate a practically similar influence of strain rate on the mechanical properties of caprolon in the temperature controlled and noncontrolled conditions. However, with the same test parameters the temperature controlled caprolon has more stable mechanical properties, which makes it preferable for use in structural elements subject to the action of pulsed loads. |
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Vashchenko V.A. Kozlov N.A. Martynov Y.B. Sinkevitch V.F. Tager A.S. 《Electron Devices, IEEE Transactions on》1996,43(4):513-518
Electrical breakdown in GaAs MESFET's is simulated by two-dimensional (2-D) quasi hydrodynamic isothermal model with two types of carriers and “mixed” boundary conditions on the contacts-fixed drain current and fixed gate bias. It was demonstrated, that when some maximum drain voltage is reached the MESFET's differential conductivity becomes negative at every gate bias. The negative differential conductivity (NDC) is caused by the electric field reconstruction in the buffer by the injected carrier space charge. It is shown that the suggested breakdown model corresponds to the experimentally observed properties of the drain breakdown of the GaAs MESFET. The instantaneous burnout of the GaAs MESFET at the drain breakdown is explained by the uncontrollable drain current increase due to the NDC formation 相似文献
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Wanlong Zhang Maksym F. Prodanov Julian Schneider Swadesh K. Gupta Tetiana Dudka Valerii V. Vashchenko Andrey L. Rogach Abhishek K. Srivastava 《Advanced functional materials》2019,29(3)
The photoalignment process to align semiconductor quantum rods (QRs) in the liquid crystal monomer (LCM) matrix is a flexible technology; however, the optical quality of the resulting enhancement films drops at high concentrations of the QRs. The compatibility between the ligand shell on the QRs and the LCM plays an important role in avoiding this issue. Herein, several kinds of ligand shells on the rod‐in‐rod CdSe/CdS QRs are designed, without affecting the optical properties of QRs, and their compatibility with LCM molecules is studied. Promesogenic dendritic ligands in combination with relatively short alkylphosphonic acids are found to provide the highest optical quality, without QR aggregation, and so the high brightness of the resulting enhancement films, even at higher concentrations of QRs in LCM, which is perfectly suitable for the application in liquid crystal displays. 相似文献
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M. P. Vashchenko 《Mathematical Models and Computer Simulations》2010,2(1):33-45
This paper covers the methods for assessing the yield of investment projects. In this article, I consider the modified Cantor-Lipman
model, which takes into account the probability of a crisis in the investments market and its impact on investor behavior.
In such a formulation, the problem is reduced to the Belman equation. However, I cannot solve this equation for the general
case. I investigate the case when a cautious investment strategy, which avoids bankruptcy, is the optimum strategy. In this
case, the task of researching a dynamic system, based on a cautious strategy of the investor, is carried out. This paper concentrates
on studying the trajectories of a system of balanced growth and the lower bound of the capital growth of the investor is estimated. 相似文献
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