INFLUENCE OF Nb ON THE MICROSTRUCTURE OF F_(e76.5-x) C_(u1)Nb_(x) Si_(13.5)B_9 NANOCRYSTALLINE STUDIED BY M■SSBAUER SPECTROCOPY

测量制备态和退火的Ｆｅ７６．５－ｘＣｕ１ＮｂｘＳｉ１３．５Ｂ９（ｘ＝０．１０、３．０、５．２、７．２）合金Ｍｏｓｓｂａｕｅｒ谱，结果表明，晶化后Ｎｂ、Ｂ等元素向晶界区扩散，在残余非晶形成了富Ｎｂ、Ｂ区和Ｎｂ、Ｂ区、Ｎｂ抑制非昌相的晶化和Ｆｅ２Ｂ相的析出，并对磁织构有一定的影响。     

准λ／4波片的精确标定

本文介绍了一种精确标定准λ/4波片的方法。利用波片推迟量与准λ/4波片光轴方位角及检偏镜透偏方位角的灵敏函数关系,精确地测量出波片的推迟量,进而对准λ/4波片精确标定。     

雷达信号综合分选方法研究

本文介绍了一种基于自组织概率神经网络的信号分选方法，主要讨论了这种神经网络在雷达信号分选中的应用，提出了针对特殊雷达信号的综合分选方法，通过大量仿真实验验证了这种方法的可行性。     

战术导弹可用度评估的研究

本文提出了一种评估战术导弹可用度的方法。通过对导弹可用度概念的建立,提出了确定间断工作系统在不通电的时间间隔内系统状态的准则,从而解决了评估导弹可用度所需要的系统正常工作时间与故障修复时间数据难于统计的问题。文中确定了间断工作系统可用度评估模型,并对两种型号反舰导弹在设计定型试验中的可用度进行了评佑。     

Group technology cell formation — Some new insights

A new technique for designing manufacturing cells based on the hospitality and flexibility of jobs are used. Host cells are formed and further reduction in the number of cells are achieved using the integer programming technique. An example problem has been solved using this approach. Cost data are included in the example problem for evaluating the different designs.     

奥克托今燃速特性的数值模拟

在分析奥克托今燃烧和热分解特征的基础上，确定了奥克托今的化学结构参数和燃速计算方法。计算结果表明，计算值与实测值十分符合。     

阳离子交换树脂催化合成水杨酸异戊酯

阳离子交换树脂在吸水剂的作用下，催化水杨酸和异戊醇合成水杨酸异戊酯，方法简单，效果良好     

滴形管束换热及流阻特性的实验研究

对空气横掠叉排滴形管束的放热及流阻特性进行了实验研究。讨论了排列方式对管束平均放热及阻力系数的影响以及平均换热系数随流动方向管排数而变化的规律。给出了计算平均换热系数及阻力系数的实验关联式。在传热实验中，采用了热质比拟原理及萘升华技术。实验的雷诺数范围为１００００～１２００００。实验结果表明，滴形管束和圆管管束相比具有强化传热及节约能源的双重优点。     

储能位置和容量对次同步振荡抑制效果的影响

为研究电池储能安装位置和储能系统容量对次同步振荡抑制效果的影响,本文将具有次同步振荡抑制功能的电池储能附加阻尼控制应用到中国华北地区某双馈风电场中,将电池储能装置安装到风电场中的不同位置,采用PSCAD时域仿真分析法,研究了储能安装位置对次同步振荡抑制效果的影响,从而确定储能最优安装位置;在最优安装位置下,改变电池储能系统容量,研究不同储能容量对次同步振荡抑制效果的影响,从而实现电池储能在风电场中安装位置和容量的优化配置.     

Inherently Area-Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide Versus Nitride Selectivity

Area-selective atomic layer deposition (AS-ALD) offers tremendous advantages in comparison with conventional top-down patterning processes that atomic-level selective deposition can achieve in a bottom-up fashion on pre-defined areas in multi-dimensional structures. In this work, a method for exploiting substrate-dependent selectivity of aminosilane precursors for oxides versus nitrides through chemo-selective adsorption is reported. For this purpose, AS-ALD of SiO₂ thin films on SiO₂ substrates rather than on SiN substrates are investigated. Theoretical screening using density functional theory (DFT) calculations are performed to identify Si precursors that maximize adsorption selectivity; results indicate that di(isopropylamino)silane (DIPAS) has the potential to function as a highly chemo-selective precursor. Application of this precursor to SiN and SiO₂ substrates result in inherent deposition selectivity of ≈4 nm without the aid of surface inhibitors. Furthermore, deposition selectivity is enhanced using an ALD-etch supercycle in which an etching step inserts periodically after a certain number of ALD SiO₂ cycles. Thereby, enlarged deposition selectivity greater than ≈10 nm is successfully achieved on both blanket- and SiO₂/SiN-patterned substrates. Finally, area-selective SiO₂ thin films over 4–5 nm are demonstrated inside 3D nanostructure. This approach for performing inherent AS-ALD expands the potential utility of bottom-up nanofabrication techniques for next-generation nanoelectronic applications.