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81.
Jau-Jiun Chen Soohwan Jang F. Ren Yuanjie Li Hyun-Sik Kim D. P. Norton S. J. Pearton A. Osinsky S. N. G. Chu J. F. Weaver 《Journal of Electronic Materials》2006,35(4):516-519
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×10−3−2×10−2 M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol−1. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates
of 1.2–50 nm · min−1 in HCl/H2O (0.01–1.2 M) and 12–54 nm · min−1 in H3PO4/H2O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6
kCal · mol−1. The resulting selectivity of Zn0.9Mg0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H3PO4. 相似文献
82.
Steam cracking for the production of light olefins, such as ethylene and propylene, is the single most energy-consuming process in the chemical industry. This paper reviews conventional steam cracking and innovative olefin technologies in terms of energy efficiency. It is found that the pyrolysis section of a naphtha steam cracker alone consumes approximately 65% of the total process energy and approximately 75% of the total exergy loss. A family portrait of olefin technologies by feedstocks is drawn to search for alternatives. An overview of state-of-the-art naphtha cracking technologies shows that approximately 20% savings on the current average process energy use are possible. Advanced naphtha cracking technologies in the pyrolysis section, such as advanced coil and furnace materials, could together lead to up to approximately 20% savings on the process energy use by state-of-the-art technologies. Improvements in the compression and separation sections could together lead to up to approximately 15% savings. Alternative processes, i.e. catalytic olefin technologies, can save up to approximately 20%. 相似文献
83.
84.
85.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
86.
昌马水库工程是甘肃省重点工程,在施工中对测量放线要求较高,为了提高放线精度及效率,在放线中引入可编程序的casio fk一4500P计算器配合,迅速处理放线数据,取得了可喜的效果。 相似文献
87.
Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers 总被引:2,自引:0,他引:2
Dang G.T. Mehandru R. Luo B. Ren F. Hobson W.S. Lopata J. Tayahi M. Chu S.N.G. Pearton S.J. Chang W. Shen H. 《Lightwave Technology, Journal of》2003,21(4):1020-1031
Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained. 相似文献
88.
89.
90.
Rui A. S. Lapa José L. F. C. Lima 《Journal of Automated Methods and Management in Chemistry》1991,13(3):119-122
The construction of a microcomputer-controlled electrode switch for
use in potentiometric determinations is described. This can be coupled to most of the analytical equipment usually found in laboratories, to enable a setting up of automatic systems capable of performing sequential determinations with several ion-selective
electrodes. The assessment of its analytical usage and behaviour are discussed. 相似文献