计算机串行通信综述

本文着重向读者介绍目前流行的几种计算机串行通信规程，它们是ＥＩＡ－ＲＳ－２３２Ｃ、ＥＩＡ－ＲＳ－４２２Ａ、ＥＩＡ－ＲＳ－４２３Ａ、ＥＩＡ－ＲＳ－４４９、ＥＩＡ－ＲＳ－４８５、ＡＲ－ＩＮＣ－４２９等。     

大学男子健美训练与体质提高的探究

通过２０３名大学男生的课余健美训练，测量训练前后体质各项指标，统计分析后发现，健美训练可使肺活量、体重、胸围以及引体向上的次数等明显增加．     

聚四氢呋喃及其下游产品的开发应用

本文论述了聚四氢呋喃技术进展、氨纶弹性纤维发展现状和国内外聚四氢呋喃产能和需求。     

一种非调制式热释电红外传感器

基于红外技术理论提出了利用热释电红外传感器(PIS)对目标扫描过程中产生双向热电电流构成非调制式热释电红外传感器的方法,并讨论了利用双并联技术的非调制式热释电传感器。     

常减压蒸馏装置阻垢剂进料管腐蚀与防护

通过对常减压蒸馏装置阻垢剂进料管的材质、性能、工作条件及腐蚀形貌、腐蚀产物的全面分析,找出了使进料管发生大面积腐蚀的腐蚀介质为环烷酸.并提出了减缓阻垢剂进料管环烷酸腐蚀的措施,主要包括选用更耐蚀的316或316 L材质以及改进三通结构等.     

解析曾懿《中馈录》——兼论川菜菜系雏形的形成

川菜菜系不是短时间内突然出现的,它有一个萌芽、雏形(开始形成)、成熟和发展的过程。本文尝试通过解析川菜经典食谱之一的曾懿《中馈录》,来探讨川菜菜系雏形的形成。     

The uniformly valid asymptotic solutions of transient cone segments in pressure vessels

In this paper, according to the theory of thin shells, a basic equation in complex form is derived for conical thin shells with linearly varying wall thickness under symmetric loads, and the uniformly valid asymptotic solutions are given.     

Residual Stress Simulation of Injection Molding

In this study, distribution and history of residual stresses in plaque-like geometries are simulated based on linear thermoviscoelastic model, which helps to understand the mechanics and evolution of the residual stresses in the injection molding process. The numerical calculation of direction, combined with the specified boundary conditions. Results show that the stress variation across the thickness exhibits a high surface tensile value changing to a compressive peak value close to the surface, with the core region experiencing a parabolic tensile peak. Residual stress distribution throughout the thickness is almost same along the flowpath and the final residual stresses value near the gate is lower than the value near the end of flowpath.     

Matlab在“计算机辅助电路分析”中的应用

"计算机辅助电路分析"课程,是通过计算机仿真实验来训练学生分析和解决电路问题的能力.实践证明,将Matlab软件,特别是其中的Simulink仿真模块作为电路分析工具,引入到计算机辅助电路分析课程教学中,收到了良好的教学效果.本文以二阶电路阶跃响应问题的求解为例,介绍了辅以Matlab的五种求解方法,并对这五种方法的特点进行了比较,说明了Matlab在电路分析方面的优越性.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.