The oxidative inducation test applied to medical PVC and other polymers

We have examined the applicability of this simple and effective test to polymer systems widely used in the medical industry. First, it was found that not every polymer examined exhibited a distinct onset of autocatalytic oxidation detectable by DSC. However, for cases where distinct onsets are found, powerful insights can be obtained. These included activation energy of the degradation, thermal oxidative shelf life prediction, and correlation, with product performances. Actual examples are presented to illustrate the utility of the test.     

Finite element analyses of repaired articular surfaces.

The response to a compressive load of a repaired cartilage surface, consisting of full-thickness repair tissue adjacent to normal cartilage, was predicted by the u-p finite element method and compared to that of a normal cartilage surface under the same loading conditions. By individually varying the aggregate modulus, permeability and Poisson's ratio for the repair tissue, analyses were performed to assess the contributions of each to the changes in mechanical behaviour. In comparing the repaired to normal surfaces, the presence of a softer repair tissue resulted in increased axial and decreased radial deformations at any given time point, while a repaired surface with an increased permeability compressed more easily due to the increased fluid flow and caused equilibrium to occur sooner. For smaller Poisson's ratio, the axial deformation was not different from normal if the aggregate modulus was the same as normal; however, the radial expansion was reduced as the repair tissue experienced a larger volume change. These results indicate that the presence of repair tissue in a joint surface can have a strong influence on the mechanical behaviour of the surface.     

ARTU监测与分布式多回路监控装置

ARTU监测与分布式多回路监控装置主要应用于智能配电、工业自动化、机床电器等领域。产品包括：     

瓦斯燃烧器回流区测试

燃烧器流场内回流区的大小和形状决定了燃烧火焰的稳定性 ,利用APV激光测速系统 ,在燃烧器冷态测试实验装置上对一瓦斯燃烧器冷态模型的流动进行了研究 ,发现了该燃烧器流场内的双回流区结构 ,并得到了中心回流区尺寸与稳焰器结构的关系 ,为该结构类型燃烧器的稳焰设计及稳焰能力的评价提供了实验依据     

液晶显示器生产中的激光退火和缺陷修复

由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性，使有源矩阵液晶显示器（AMLCD）的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复，可有效的改善AMLCD的性能，提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后，讨论了激光对不同类型缺陷修复的原理和过程。最后，分析比较了不同类型激光退火方法的特点。     

Decision-directed maximum-likelihood estimation of OFDM framesynchronisation offset

The authors propose a method to estimate the synchronisation offset for orthogonal frequency division multiplexing (OFDM) frame alignment without resort to pilot tones. A decision-directed maximum-likelihood estimation of frame synchronisation offset is derived, and the performance of the proposed scheme is confirmed by computer simulation for QAM systems     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance