Diffusion-controlled size-selective chloride ion sensing in the presence of bromide ion using a thin, nanoporous, plasma-polymerized coating on an Ag/AgCl electrode

We have developed a diffusion-controlled size-selective method for sensing chloride ion in the presence of bromide ion, based on a thin, nanoporous, plasma-polymerized coating of hexamethyldisiloxane on an Ag/AgCl electrode. Sub-nanometer-sized pores responsible for a highly cross-linked polymer network in the plasma-polymerized coating allowed diffusion-controlled permeation of chloride ion while blocking the larger bromide ion. An electrode coating of thickness greater than 70 nm enabled chloride detection in the concentration range 1-10 mM in the presence of 0.63 mM bromide ion. Advantages of this approach are: (1) simple design compared with ionophore-based strategies and (2) compatibility with microfabrication and mass production processes.     

Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 10⁴ A/cm² is estimated considering the effect of current pulse width.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

Molecular Dynamics Simulation of Structural Relaxation of Asphaltene Aggregates

For asphaltene obtained from vacuum residue of Khafji crude oil, the energy-minimum conformation calculated by molecular mechanics-dynamics simulations showed that aggregated structures of asphaltene molecules through noncovalent interactions are more stable. Changes induced in aggregated structures by pretreatment with solvents were investigated using molecular dynamics calculations. The simulation showed that in quinolin at 573 K, some staking interactions could be disrupted, while, in 1-methylnaphthalene it was not observed. Autoclave experiments showed that the coke yield after pyrolysis at 713 K was decreased when the asphaltene was pretreated with quinoline at 573 K for 1 h, compared to the yield without the pretreatment. While, in the case of pretreatment in 1-methylnaphthalene, the coke yield did not change significantly. The simulation's results above can be related to the difference in coke yield between two solvents; in quinoline some aromatic-aromatic stacking interactions could be disrupted and mobility of molecules was increased. This resulted in prevention of the asphaltenes from polymerizing, as in condensation reactions among aromatic rings. Consequently, the coke yield after the pretreatment with quinoline was decreased.     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.     

Plastic deformation of bcc metal thin foils without dislocation

Heavy plastic deformation of fcc metal thin foils to fracture has been found recently to proceed without involving dislocations, and it results in the formation of high density of vacancy clusters. Thin foil specimens of bcc metals such as V and Mo were plastically deformed to fracture in in situ elongation experiments under an electron microscope. Morphology of thinning and fracture was found to be similar to fcc metals, and no dislocation was observed during heavy deformation. Electron diffraction analysis at the tip of a crack during deformation confirmed a large elastic deformation of up to 5%. Unlike in fcc metal thin foil specimens, point defect clusters were not observed near fractured tips. This difference is attributed to the difference in vacancy reaction, though the deformation in bcc metals without dislocation most likely does produce vacancies.     

Ru-catalyzed anode materials for direct hydrocarbon SOFCs

A solid oxide fuel cell using a thin ceria-based electrolyte film with a Ru-catalyzed anode was directly operated on hydrocarbons, including methane, ethane, and propane, at 600 °C. The role of the Ru catalyst in the anode reaction was to promote the reforming reaction of the unreacted hydrocarbons by the produced steam and CO₂, which avoided interference from steam and CO₂ in the gas-phase diffusion of the fuels. The resulting peak power density reached 750 mW cm⁻² with dry methane, which was comparable to the peak power density of 769 mW cm⁻² with wet (2.9 vol.% H₂O) hydrogen. More important was the fact that the cell performance was maintained at a high level regardless of the change in the methane utilization from 12 to 46% but was significantly reduced by increasing the hydrogen utilization from 13 to 42%. While the anodic reaction of hydrogen was controlled by the slow gas diffusion, the anodic reaction of methane was not subject to the onset of such a gas-diffusion process.     

Survey of switching techniques in high-speed networks and their performance

One of the most promising approaches for high speed networks for integrated service applications is fast packet switching, or ATM (asynchronous transfer mode). ATM can be characterized by very high speed transmission links and simple, hard-wired protocols within a network. To match the transmission speed of the network links, and to minimize the overhead due to the processing of network protocols, the switching of cells is done in hardware switching fabrics in ATM networks. A number of designs have been proposed for implementing ATM switches. Although many differences exist among the proposals, the vast majority of them are based on self-routeing multistage interconnection networks. This is because of the desirable features of multi-stage interconnection networks such as self-routeing capability and suitability for VLSI implementation. Existing ATM switch architectures can be classified into two major classes: blocking switches, where blockings of cells may occur within a switch when more than one cell contends for the same internal link, and non-blocking switches, where no internal blocking occurs. A large number of techniques have also been proposed to improve the performance of blocking and non-blocking switches. In this paper, we present an extensive survey of the existing proposals for ATM switch architectures, focusing on their performance issues.     

Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.