Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

Design and operation modes of double-junction monolithic lattice-matched solar cells based on the ZnSiP₂/Si system of materials have been calculated. The effect of the photoactive region thickness and minority carrier lifetime in ZnSiP₂ layers on the efficiency of conversion of the incident solar light energy into electrical power was determined. It is shown that solar cells based on ZnSiP₂/Si heterostructures can provide efficiencies of 28.8% at AM1.5D, 100 mW/cm², and 33.3% at AM1.5D, 200 W/cm².     

Conveyer-belt accidents in mining and metallurgy

The dynamic interaction between the mechanical and electrical drive parameters when damage suddenly appears in the mechanical part of a conveyer belt is investigated. The possibility of using the change in the motor’s electrical parameters as a diagnostic signal is assessed. A model for investigating the dynamic processes in the system consisting of the grid, the induction motor, and the conveyer belt is proposed. The grid and induction motor are described by a model of fourth-order state space, whose output is the torque at the motor shaft. The moments of inertia and pliability of the links between the elements in the mechanical part of the conveyer belt are determined. By gradually identifying the elements with the minimum moment of inertia and distributing their moments of inertia and pliabilities among the adjacent elements, we obtain a three-mass system simulating the mechanical part of the conveyer belt. This dynamic model is solved by means of Matlab Simulink software. The energy characteristics of the drive are determined in dynamic processes following a mechanical accident.     

On the problem of hydrogen removal during heat treatment of large forgings

The solutions to a differential equation for the problem of heating of a cylinder in a medium with a fixed temperature are used to obtain equations for estimating the change in the hydrogen concentration in forgings from data on the hydrogen concentration at the cylinder axis or on the average bulk hydrogen concentration. Similar equations are also obtained for forgings having square cross sections. The calculation demonstrates that, for the case of a twofold decrease in the hydrogen concentration in a forging, the calculated times of annealing of a cylindrical forging differ by three times.     

Volumetric out-of-furnace heat treatment of 3600-M3 decomposers

Specifications require that all the welds in 12-m-diam. decomposers with a capacity of 3600 m³ be subjected to high-temperature tempering before going into service in order to alleviate the stresses from the welding operation. Specialists at the organizations VNIIPTkhimnefteapparatury and VNIImontazhspetsstroi have proposed out-of-furnace volumetric (complete) of the assembled decomposer with the use of special heaters. The use of this heating method has shortened assembly operations while providing the welds with a highquality heat treatment and reducing the stresses overall (including welding stresses, stresses from assembly of the decomposer, etc.) The technology ensures uniform heating of the housing of the decomposer and provides for close control over the process. The experience gained in heat-treating decomposers can also be used in the construction of other containers that come into contact with corrosive media. __________ Translated from Metallurg, No. 3, pp. 61–64, March, 2006.     

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E _g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E _g (including the case of CO₂ laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T _c = 45 K); at higher temperatures, the effect disappears.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.     

Photoelectric properties of planar structures with double Schottky barrier treated in a high-vacuum microwave discharge

The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate.