Infrequent association: massive inguinoscrotal bladder hernia, multiple scrotal lithiasis, and bilateral obstructive uropathy]

BACKGROUND AND AIMS OF THE STUDY: Surgical treatment of functional tricuspid regurgitation associated with advanced valvular disease remains controversial, mainly due to the difficulty in choosing between valve replacement or reconstructive surgery. Failure to correct tricuspid regurgitation during valvular surgery carries a poor prognosis, as reoperation may represent a significant risk to the patient. Thus correct tricuspid valve surgery is vital to achieve improved early and long-term clinical results. METHODS: A total of 142 patients underwent concomitant tricuspid annuloplasty with mitral valve replacement and their clinical outcome was assessed. RESULTS: Overall hospital mortality rate was 11.3%. Seven patients died during follow up. The overall actuarial survival rate for 10 years was 74.1 +/- 14.2%. Postoperatively, 75.8% of the patients had no residual tricuspid insufficiency, while 24.2% had first- or second-degree tricuspid insufficiency and were treated medically. All patients were in NHYA functional class I or II postoperatively. CONCLUSION: Clinically, it is important to assess the severity of functional tricuspid insufficiency before and/or during the operation. Bicuspidalization annuloplasty for functional tricuspid insufficiency has provided good results, with a low incidence of reoperation and significant clinical improvement. The technique could be used in most patients with functional tricuspid regurgitation.     

Interfacial reactions in the squeeze-cast (SAFFIL+C)/SAE 329 Al composite

Interfacial reactions in the squeeze-cast SAE 329 Al alloy reinforced with SAFFIL and carbon fibers were investigated using scanning and transmission electron microscopy and secondary ion mass spectroscopy. The SiO₂ layer added as a binder for the preform of SAFFIL fiber appeared to prevent excessive reaction between the fiber and the molten Al alloy during casting. In the as-cast composite, the reaction between the SiO₂ layer and the Al alloy is considered to produce MgO crystals in the vicinity of SAFFIL fiber. With subsequent heat treatment of the composite to the T6 condition, small crystals of MgO and MgAl₂O₄ were found to form at the surface of SAFFIL fiber as a result of interfacial reaction between the SiO₂ layer and the Al alloy. Even at the T6 condition, significant reactions between the Al alloy and SAFFIL fiber itself were not observed, indicating the effective role of the binder layer in suppressing the degradation of SAFFIL fiber by reaction with the Al alloy.     

HEURISTIC APPROACHES FOR LOADING PROBLEMS IN FLEXIBLE MANUFACTURING SYSTEMS

Flexible manufacturing systems (FMSs) are able to process a wide variety of operations, but the specific mix of operations that can be performed at any point in time depends upon the combination of tools loaded onto the machines. The machines have tool magazines with finite capacities. We consider the problem of assigning operations and their associated tools to machines (or groups of machines) to maximize the throughput for a specified steady-state mix of orders. Since this objective is difficult to deal with directly, we use an intermediate objective of meeting workload targets for each machine group as closely as possible. A certain form of this intermediate objective has been shown to correlate highly with the original objective.

Since it is computationally intractable to find optimal solutions for problems with more than 20 operations, fast heuristic algorithms are developed. These algorithms are adapted from multi-dimensional bin-packing algorithms. Computational results are reported.     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Improving technical specifications from a risk perspective

The Technical Specifications (TSs) for a nuclear power plant is an important licensing document which defines various operational requirements or conditions. In light of the recent trends to move towards risk-based regulation, many researchers analyzed the risk impacts associated with the TS requirements, using the plant models, such as event trees or fault trees, that were developed as part of probabilistic safety assessments. This paper presents the insights gained from a review of these risk-based analyses of TSs, focussing on surveillance requirements and AOT (allowed outage time) requirements.     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.