PLD法生长高质量 ZnO薄膜及其光电导特性研究

采用脉冲激光沉积（PLD）法在单晶Si（100）衬底上生长ZnO薄膜，以X射线衍射（XRD）和场发射扫描电镜（SEM）等手段分析了所得ZnO薄膜的晶体结构和微观形貌．结果表明，随着衬底温度和薄膜生长时氧分压的增加，ZnO薄膜的晶体结构和化学计量比得到显著改善．优化工艺（700℃，20Pa）下生长的ZnO薄膜呈c轴高度择优取向，柱状晶垂直衬底表面生长，结构致密均匀．以不同暗电阻的ZnO薄膜为材料，利用剥离（1ift-off）技术制备了MSM结构ZnO光电导型紫外探测器．紫外光照射前后的I-V特性测试表明ZnO薄膜产生非常明显的光电导现象，分析了其光电响应机理．     

用于智能激光防护武器的二氧化钒薄膜研究进展

随着激光武器的迅猛发展,寻找一种适用于激光防护领域的新型材料,有效对抗激光致盲,已成为摆在各国面前非常现实的问题。二氧化钒(VO2)作为一种性能优异的功能材料,在68℃附近发生从低温半导体相到高温金属相的可逆突变。但由于钒氧体系的复杂性和纯VO2薄膜相变温度较高等关键问题尚没有完全解决,严重阻碍了其在热电开关、激光防护和温控装置等方面的实际应用。综述了VO2薄膜多种制备方法的原理和优缺点,并重点介绍了VO2薄膜在智能激光防护武器上的应用。     

喷雾热解法生长N掺杂ZnO薄膜机理分析

通过超声喷雾热解工艺,以醋酸锌和醋酸铵的混合水溶液为前驱溶液,在单晶Si(100) 衬底上制备了N掺杂ZnO薄膜,采用热质联用分析(TG—DSC—MS)、X射线衍射(XRD)、场发射扫描电镜(FESEM)和霍耳效应(Hall-effect)测试等手段研究了喷雾热解工艺下N掺杂ZnO薄膜的生长机理、晶体结构和电学性能.结果表明,随衬底温度的不同,薄膜呈现出不同的生长机理,从而影响薄膜的晶体结构和电学性能.在优化的衬底温度下,实现了ZnO薄膜的p型掺杂,得到的p型ZnO薄膜具有优异的电学性能,载流子浓度为3.21×10¹⁸cm^-3,霍耳迁移率为110cm²·V^-1s^-1,电阻率为1.76×10^-2Ω·cm.     

ZnO films on transferable and low thermal resistance graphite substrate grown by ultrasonic spray pyrolysis

ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn(CH 3 COO) 2 ·2H 2 O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet(UV) emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin fi lms could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with suffi cient power durability.     

The inorganic-organic hybrid junction with n-ZnO nanorods/p-polyfluorene structure grown with low-temperature aqueous chemical growth method

The inorganic-organic hybrid junction was synthesized on ITO glass substrate,which was consisted of an n-type ZnO nanorods(NRs)grown by low-temperature aqueous chemical growth method and a p-type polyfluorene(PF)organic film fabricated by spin-coating.The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer.The thickness of the PF layer plays a dominant role for the current-voltage(I-V)characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device,and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness.The photoluminescence(PL)spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene(PF)structure,which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.