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91.
Albul V. I. Bychkov V. B. Gusev K. E. Demidov V. S. Demidova E. V. Kurchanov A. F. Luk'yashin V. E. Sokolov A. Yu. 《Measurement Techniques》2003,46(8):810-814
A monitor is proposed based on ultrasonic production when ionizing radiation passes through a medium. The recording element is a 0.2 mm aluminum plate mounted in a ceramic acoustic converter AC in the form of a wedge of thickness 2 mm. The low plate thickness minimizes the beam parameter distortion, while special technology used in the AC provides high sensitivity. The device has been calibrated in the proton beam from the ITEP accelerator at 200 MeV with 2·109–6·1010 particles in a pulse and a pulse length of 70 nsec. 相似文献
92.
93.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry 相似文献
94.
N. Jongen M. Donnet P. Bowen J. Lemaître H. Hofmann R. Schenk C. Hofmann M. Aoun‐Habbache S. Guillemet‐Fritsch J. Sarrias A. Rousset M. Viviani M.T. Buscaglia V. Buscaglia P. Nanni A. Testino J.R. Herguijuela 《化学工程与技术》2003,26(3):303-305
The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production. 相似文献
95.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
96.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
97.
We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si. 相似文献
98.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction
study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The
films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and
a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can
be used for optimization of the CIGS film technology. 相似文献
99.
100.
洼60-H26水平井套铣打捞技术 总被引:3,自引:1,他引:2
洼60-H26井是一口中曲率水平井,设计井深1 922 m,由于地面条件的限制,设计采用三维井眼轨道。该井水平段在钻至井深1 801 m时,发生卡钻事故。在卡钻事故处理过程中,采用测卡、爆炸松扣技术取出上部钻具后,应用了不同规格的套铣管对被卡钻具进行套铣,采用间歇式套铣方式实现了大斜度井段(45°-90°)的安全套铣,采用短套铣管完成了时水平井段内φ215.0 mm稳定器的套铣,采用φ228.6 mm套铣管成功套铣水平井段被卡LWD仪器,最后通过震击器震击成功解卡。详细介绍了洼60-H26水平井卡钻事故的处理过程,分析了在水平段处理卡钻事故的难点。该井处理卡钻事故的经验,对以后水平井施工中处理井下事故、打捞贵重仪器具有借鉴价值。 相似文献