TEM Studies of High Temperature Corrosion Behaviour of TiAl Intermetallics with Surface Modifications

The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl₃ diffusion coating was studied in an environment of H₂/H₂S/H₂O at 850^oC. The kinetic results demonstrate that the TiAl₃ coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al₂O₃ scale on the surface of the TiAl₃‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800^oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate.     

Performance limitation due to statistical Raman crosstalk in a WDM system with multiple-wavelength bidirectionally pumped Raman amplification

A general theoretical model of statistical Raman crosstalk and its impact on system performance in a multiwavelength bidirectionally pumped Raman fiber amplifier (RFA) is developed for the first time, where we have taken modulation statistics, dispersion-induced pulse walk-off and signal-induced pump depletion into account. Two kinds of statistical Raman crosstalk, from signal-induced forward-pump depletion and from signal-signal Raman interaction, are included in one model. Formulas for normalized Raman crosstalk, Raman crosstalk-induced relative intensity noise spectral density, and its variance and system performance impact in terms of Q penalty are presented for both a single-span system and a dispersion-compensated multispan wavelength-division-multiplexed (WDM) link. Based on these formulas, we numerically investigate the impact of Raman crosstalk on system performance in a three-wavelengths bidirectionally pumped 40 /spl times/ 40-Gb/s WDM system for various fiber types. In addition, Raman crosstalk in a four-wavelength bidirectionally pumped RFA was experimentally measured. The results agree well with our theory.     

求解二维结构-声耦合问题的一种直接方法

本文基于传递矩阵法(TMM)和虚拟边界元法(VBEM)，提出了一种求解在谐激励作用下二维结构-声耦合问题的直接法。文中对任意形状的二维弹性环建立了一阶非齐次运动微分方程组，便于用齐次扩容精细积分法求解，对于含有任意形状孔穴的无穷域流体介质的Helmholtz外问题，采用复数形式的Burton-Miller型组合层势法建立了虚拟边界元方程，保证了声压在全波数域内存在唯一解。根据叠加原理并结合最小二乘法，提出了一种耦合方程的直接解法，由于该方法不存在迭代过程，因而具有较高的计算精度和效率。文中给出了二个典型弹性环在集中谐激励力作用下声辐射算例，计算结果表明本文方法较通常采用的混合FE／BE法更为有效。     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

数值试井在白6-2井测试资料分析评价中的应用

数值试井是在近来发展的一项新的试井解释技术，具有处理非均质，复杂边界油气藏问题的优点，弥补了常规解析试井技术的不足。运用数值试井解释技术，结合动、静态资料，通过对白6-1断块白6-2井测试资料的综合分析评价，确定了储层渗流参数，落实了该气藏的边界情况，为该断块下一步开发提供可靠依据。     

一类Feistel密码的线性分析

该文提出一种新的求取分组密码线性偏差上界的方法，特别适用于密钥线性作用的Feistel密码．该分析方法的思路是，首先对密码体制线性偏差进行严格的数学描述，分别给出密码线性偏差与轮函数F及S盒的线性偏差的数学关系；然后通过求取线性方程组最小重量解，确定密码线性偏差的上界．