Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

Semiconductors - A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and...     

Induced surface states of the ultrathin Ba/3<Emphasis Type="Italic">C</Emphasis>-SiC(111) interface

The electronic properties of the Ba/3C-SiC(111) nanointerface are for the first time studied by photoelectron spectroscopy with the use of synchrotron radiation in the energy range 80–450 eV. The experiments are performed in situ in ultrahigh vacuum for ultrathin Ba coatings on 3C-SiC(111) samples grown by a new method of substituting substrate atoms. It is found that the adsorption of Ba brings about the appearance of induced surface states with the binding energies 1.9, 6.2, and 7.5 eV. Evolution of the surface states and the spectra of the Si 2p and C 1s core levels shows that the Ba/3C-SiC(111) interface is formed due to charge transfer from Ba adatoms to surface Si atoms and underlying C atoms.     

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

Photoemission studies of the electronic structure of the vicinal SiC(100) 4° surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4° interface have been performed for the first time. The modification of spectra of the valence band and C 1s and Si 2p core levels in the process of formation of the Cs/SiC(100) 4° interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1s core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4° surface results in intercalation of graphene islands on SiC(100) 4° with Cs atoms.     

Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation

Semiconductors - Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth...     

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Semiconductors - Ultrathin epitaxial silicon nitride films were formed on different Si(111) and SiC/Si(111) substrates by nitridation with plasma-activated nitrogen. Photoemission studies of the...