Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)_nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here     

Motion based object tracking with mobile camera

An efficient algorithm which detects and tracks a moving object is proposed. The global motion energy caused by camera movement is eliminated by finding the maximal matching position with the cross-correlation value between two consecutive frames using the spiral scanning technique. The region of a moving object is segmented exactly by combining the results of the temporal derivatives and edge map from one image, and the actual centroid of the moving object is determined as the mid-point of the cumulative distribution of the projection profile of the region     

Multigrid computation for curve fitting in the wavelet domain

A multi-layer multigrid algorithm for curve fitting in the wavelet domain is presented. This algorithm is achieved by applying a wavelet transform to each grid of the conventional multigrid structure. Using a wavelet transform, the convergent rate in each grid is improved and the total system can converge more quickly     

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process     

Eight-channel bidirectional WDM add/drop multiplexer

The authors propose and demonstrate an eight-channel reconfigurable bidirectional wavelength division multiplexed (WDM) add-drop multiplexer in which all channels can be added/dropped independently in either direction. The performance of the bidirectional WDM add/drop multiplexer is experimentally studied for a data rate of 10 Gbit/s per channel, providing an overall capacity of 80 Gbit/s. It is found that the performance of the add/drop multiplexer is not degraded by a backward propagating signal     

Thermal properties and crystalline structure of liquid crystalline poly(ethylene terephthalate‐co‐2(3)‐chloro‐1,4‐phenylene terephthalate)

Thermal properties and crystalline structure of liquid crystalline (LC) poly(ethylene terephthalate‐co‐2(3)‐chloro‐1,4‐phenylene terephthalate) [copoly(ET/CPT)] were investigated using differential scanning calorimetry (DSC), thermogravimetry (TGA), limiting oxygen index (LOI) measurement, electron dispersive X‐ray analysis (EDX), X‐ray diffractometry, and infrared spectrometry (IR). The thermal transition temperatures of copoly(ET/CPT) were changed with the composition. Copoly(ET/CPT) showed two thermal decomposition steps and the residues at 700°C and LOI values of copoly(ET/CPT) were almost proportional to its chlorine content. The activation energy of thermal decomposition of LC units was very low compared to that of poly(ethylene terephthalate)(PET) units. Crystal structure of copoly(ET/CPT) (20/80) was of triclinic system with the lattice constants of a = 9.98 A?, b = 8.78 A?, c = 12.93 A?, α = 97.4°, β = 96.1°, and γ = 90.8°, which is very close to that of poly(chloro‐p‐phenylene terephthlate) (PCPT) with the lattice constants of a = 9.51 A?, b = 8.61 A?, c = 12.73 A?, α = 96.8°, β = 95.4°, and γ = 90.8°. When copoly(ET/CPT)(50/50) was annealed at 220°C in vacuum, crystallization induced sequential reordering (CISR) was not observed but the heat of fusion was slightly increased due to the increase of the trans isomer content in PET units. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 84: 1286–1294, 2002; DOI 10.1002/app.10451     

Simulation of polarization converter formed by poling-inducedpolymer waveguides

A polarization converter using electrooptic (EO) polymer waveguides is proposed and it is simulated by a full vectorial beam propagation method (VBPM) for anisotropic medium. First, an efficient structure of poling electrodes is proposed for the fabrication of TE-mode poling-induced waveguides in EO polymer. For given electrode structures of both TE-mode and TM-mode waveguides, poling-induced dielectric tensors are calculated by the finite-element method to provide refractive index distribution, data for VBPM simulation. It is shown numerically that the poled TE and TM mode waveguides work efficiently as the corresponding polarization filters. Then, new poling electrodes are suggested to fabricate a waveguide device formed by connecting the TE and TM mode waveguides adiabatically with a slowly varying structure. This waveguide device has the optic axis slowly rotating as one moves along the propagation direction, so that it will act as polarization converter. VBPM simulation shows that the polarization of the guided mode rotates following the optic axis distribution. Polarization conversion is demonstrated successfully with high conversion efficiency and low excess loss     

Pore‐free mold‐pattern‐transfer method for barrier ribs of HD PDPs

Abstract— Among various barrier‐rib manufacturing processes, the mold‐pattern‐transfer method has potential to reduce processing cost as well as the manufacture of high‐resolution pixels. In this study, the effects of major processing variables of the mold‐pattern‐transfer process on the formation of air‐trapped pores within barrier ribs were examined. The results indicated that with an optimum combination of the processing variables, barrier ribs without trapped defects can be produced, demonstrating the possibility of reducing the number of processing steps and costs of barrier ribs.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.