油砂地层中子-伽玛能谱Monte-Carlo模拟

本工作应用自行研制开发的中子 伽玛能谱测井的中子 伽玛射线随空间、能量、时间分布的蒙特卡罗模拟软件包计算了裸眼井、井眼里无下井仪器、油饱和砂岩地层、井眼注油条件下沿井轴和井壁的中子 伽玛射线随能量、时间分布及沿井轴和沿井壁的中子 伽玛射线能谱 ,研究了源距对中子 伽玛射线随能量、时间分布以及井轴与井壁中子 伽玛射线能谱的影响。     

Efficient performance analysis of asynchronous cellular CDMA overRayleigh-fading channels

The bit error rate (BER) analysis of a direct-sequence code-division multiple-access (DS-CDMA) cellular system over a Rayleigh-fading channel often results in complicated expressions even though the Gaussian approximation is applied. A combined probability density function (pdf) approach for the forward link and a mean-method technique for the reverse link are proposed to significantly reduce the computational complexity. The simplified BER expressions are derived and yield accurate results     

矩形件排样的一种优化算法

排样问题是一种总体资源分配问题，这里根据矩形件排样的工艺要求，提出了矩形件排样的一种近似算法，将一块板材分成三部分，每部分排一种零件，使得减料方便，提高了劳动生产率。     

Application of Direct Ignition Technology with Minimum Gasified Oil in Lignite-Fired Boiler

The firing is in the stable condition and the rate of oil saving comes up to 64%, after Fularji Power Plant adopted the technology of minimum gasified oil igniting pulverized lignite directly and the technology of multistage coal combustion with energy amplified stage by stage.     

中原油田水平井钻井液技术

根据中原油田地层高温、高盐、易塌、易漏失及水平井的特点,优选了适用于水平井的强抑制强封堵聚合物钻井液体系,并进行了现场应用.室内实验结果表明,优选的强抑制强封堵聚合物钻井液具有良好的井眼净化、摩阻控制、井壁稳定及油层保护等性能.现场应用时能满足钻井、录井、测井的需要,钻井施工顺利,取得了良好的经济和社会效益.     

沿江圩区排涝水文计算实例

设计排涝模数的计算是圩区排涝规划的主要内容之一,它的大小决定了排涝站的装机容量和涵闸尺寸.本文推求了安徽省马鞍山市大公圩地区的排涝模数,是沿江圩区排涝水文计算的一个应用实例.     

Determining stress intensity factors of composites using crack opening displacement

The main purpose of this paper is to find the mixed-mode stress intensity factors of composite materials using the crack opening displacement (COD). First, a series solution of the composite material with a crack was used to evaluate COD values. Then, the least-squares method was used to calculate mixed-mode stress intensity factors. This algorithm can be applied to any method that generates or measures COD values. The major advantage of this method is that COD values very near the crack tip are not necessary. Both finite element simulations and laboratory experiments were applied to validate this least-squares method with acceptable accuracy if the even terms of the series solution are removed.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold