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M. Lamirand J. -L. Bonnentien S. Guérin G. Ferrière J. -P. Chevalier 《Metallurgical and Materials Transactions A》2006,37(8):2369-2378
The effect of added oxygen in the range of 1000 to 4000 wt ppm on the microstructures of a Ti-48Al-2Cr-2Nb alloy has been
investigated and compared to the microstructures for a high-purity alloy. For specimens cooled from theα phase, interstitial oxygen stabilizes the lamellar microstructure with respect toγ grains, with higher than equilibrium values for theα
2 volume fraction. For specimens cooled from theα +γ phase field, the lamellar microstructure still tends to be favored by oxygen, but it is found that the phase volume fractions
are not significantly different from equilibrium values. This suggests that interstitial O essentially reduces the kinetics
of theα toα +γ transformation. Thus, interstitial oxygen will have a strong effect on microstructures obtained by continuous cooling fromα, but significantly less on those, such as the duplex microstructure, obtained by long treatment in theα +γ phase field. In general, increased O content is well correlated with reduced ductility. Finally, the role of interstitial
oxygen on this phase transformation is discussed. 相似文献
106.
《建设工程工程量清单计价规范》的颁布实施,是工程建设领域的一件大事,为了更好的推行和施行计价规范,应做好多方面的工作。 相似文献
107.
Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses 总被引:1,自引:0,他引:1
Min Xue Mingxiang Wang Zhen Zhu Dongli Zhang Man Wong 《Electron Devices, IEEE Transactions on》2007,54(2):225-232
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress 相似文献
108.
主风机发生喘振后流量减小并且振动增大,抢修后振动未消除反而增加,且有上升趋势.运用状态监测方法对其测试分析,查出振源为动不平衡和对中不良.为使机组能继续安全运行,采取了加强监测,降低轴系负荷和降低润滑油油温等措施,故障消除. 相似文献
109.
通过都昌县2000年旱情及受灾情况的分析,揭示了产生这种现象的原因,并且提出了相应解决问题的对策。 相似文献
110.
Four genes on the short arm of human chromosome 19 (HSA 19p) were assigned to bovine chromosome 7 (BTA 7) using a bovine x rodent somatic hybrid cell panel. These four genes were cartilage oligomeric matrix protein (COMP), lymphoblastic leukemia derived sequence 1 (LYL1), lysosomal alpha-mannosidase (MANB), and RAS oncogene family member RAB3A. Bovine sequence tagged sites were developed for the four genes and used for screening a bovine x rodent somatic cell panel. All four genes were mapped to bovine synteny group U22 (BTA 7) with a correlation coefficient of 0.901-1.000. This study confirms that the centromeric region of BTA 7 is conserved with HSA 19p. 相似文献