受干扰波相位测量的一种新方法

为了测量受噪声和谐波干扰的两个信号间的相位差，基于自适应带通滤波器（ABF）和测量信道交换技术，提出了一种新的测量方法。ABF采用可编程开关电容滤波器（PSCF）和锁相环，明显地抑制了噪声和谐波干扰，频率跟踪范围超过四个倍频程（0．5Hz-6kHz）。用微处理器控制4个开关来交换测量信道，可以基本上消除测量通道引入的附加相位移。两种方法结合提高了相位差的测量精度。实验说明了该测量方法的有效性，该方法也适合于被测信号为慢时变情况。     

钢筋混凝土连续曲线箱梁设计探索

以上海市沪闵路高架道路二期工程SW匝道曲线箱梁设计为例 ,对曲线梁的内力特点及调整方法作了初步探索。     

基于CAN总线的多点温湿度检测系统

本文介绍了基于CAN总线的多点温湿度检测系统的整体设计,详细介绍了各部分的组成.经过现场应用表明,设计合理,可靠性高.     

姬塬油田某井区油层特征分析及解释方法

G19井区为姬塬油田主力产建区域,其低阻油层成因复杂,类型多,近几年解释困难较多,解释符合率偏低。本文从该区低阻油层特征分析入手,总结出该区油藏特征规律,并归纳出适合该区的几种有效实用的测井解释方法。     

可编程控制器在捆扎机自动控制中的应用

介绍了一种用可编程控制器（PLC）实现捆扎机自动控制的设计方案，详细地介绍了设计过程，给出了完整的程序流程图和部分控制程序。     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

钨钼活化烧结机理

主要介绍了添加少量Ｎｉ－Ｃｏ时钨，钼的低温烧结特性，对比了纯钨，Ｗ－Ｃｏ，Ｗ－Ｎｉ，Ｗ－Ｎｉ－Ｃｏ，纯钼，Ｍｏ－Ｃｏ，Ｍｏ－Ｎｉ，Ｍｏ－Ｎｉ－Ｃｏ烧结体系，测算了这些体系的烧结活化能，研究了其低温烧结机理，发现Ｎｉ－Ｃｏ对钨，钼的烧结具有最好的活化效果，说明镍与钴的共同加入对钨，钼的烧结具有协同活化作用。     

Effect of nitrocarburizing on sulphide layer during nitrocarburizing-sulphurating treatment

Compared with the single sulphurating treatment, the duplex treatment of nitrocarburizing-sulphurating can more effectively improve the properties of steel such as friction-reducing, wear resistance and anti-scuffing. Under the same processing parameters, the sulphide layers were fabricated on the surface of CrMoCu alloy cast iron by single ion-sulphurating treatment and nitrocarburizing-sulphurating duplex treatment, respectively. Through the analysis of the sulphide, the effect of the nitrocarburizing on the fabrication of the sulphide layer was investigated. And the result shows that the fabrication of sulphide layer is promoted by the nitrocarburizing treatment.