A novel optical burst switching scheme—logical cascaded private subnet with start wavelength assignment policy

Many recent studies have convincingly demonstrated that network traffic exhibits a noticeable self-similar nature, which has a considerable impact on network performance, and most studies of optical burst switching (OBS) networks are under a fundamental assumption that full wavelength conversion is available throughout the network. In practice, however, economic and technical considerations are likely to dictate a more limited and sparse deployment of wavelength converters in the optical network. Therefore, we present a novel scheme for OBS networks, called logical cascaded private subnet (LCPN) with start wavelength assignment policy. We define the concept of canoe relative to cluster in self-similar traffic, and introduce a new device named payload segregator at the edge node as a gateway to the core node in OBS Networks. According to the changes in the edge node framework, we put forward the concept of cluster private subnet and canoe private subnet in the core node correspondingly. A new start wavelength assignment policy is proposed for the absence of (full) wavelength conversion capabilities in the core node of OBS Networks. The performance study indicates that, our new scheme is robust under self-similar traffic and wavelength continuity constraint.     

S1240一次呼叫转移命令不成功故障的排除

对S1240交换机一次呼叫转移命令不成功故障排除的过程进行了分析。     

脉冲电镀最佳参数之探索和优化

本文利用正交实验法对脉冲电镀各控制参数进行试验,对影响分散能力、镀层可靠性及外观质量的各种因素进行探讨,寻找影响外观质量的显著因子并加以控制,同时进一步优化脉冲电镀的工艺参数。     

Integrated magnetic full wave converter with flexible output inductor

A new integrated magnetic full wave DC/DC power converter that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramatically. The operation and performance of the proposed circuit are verified on a 100 W prototype converter.     

Orientation-based unique representation for planar curves and shapes

This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations.     

含钡合金在钢液中的脱氧行为研究

在MoSi2炉上采用MgO质坩蜗对钢管进行了含钡合金脱氧行为的研究。实验中钡系合金主要选取SiAUBa、SiCaBa、SiAlBaCa、SiAlBeCaSr及用于钙处理的SiCa包芯线，选用Al作为对比脱氧剂，考察了钡系合金脱氧的全氧含量，脱氧产物的分布、尺寸和形貌，探讨了钡系合金脱氧和对夹杂物变性作用的机理。     

论高层建筑中央空调水系统水压试验的步骤

通过对中央空调水系统安装的特点分析,确定了应用效果良好的试压步骤。     

随机模拟在电信网性能评价中的应用

本文介绍了可在微机上实现大规模电信网践模拟的实用化软件ＳＩＭＵＮＥＴ，及基所采用的无时钟事件追踪法。该软件可用规划中的电信网络和实际网路的模拟及性能评价，也可用于不同流量控制算法的评价。文中给出一个评价实例。     

雾化水流计算模式

本文描述了雾化水流现象并提出了雾化水流的一个计算模型。得出了雾化水流影响领域的各种不同的计算公式和方法。     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology