A Web‐based and Group Learning Environment for Introductory Environmental Engineering

The use of computer‐based technology is becoming more prevalent in the classroom. As a part of an educational research project sponsored by the GE Foundation, strategies for augmenting a course, Introduction to Environmental Engineering (CE 280), were investigated including cross‐disciplinary experiences in teamwork, design, and the use of advanced teaching technologies such as the web. Interactive tools to assist student learning were developed and refined. Efforts have focused on developing an extensive website, web‐based quizzes and homework assignments, and tutorials. Base groups were used to provide both intellectual and emotional support to students. This paper summarizes the development of this course and the impact of rapid feedback on the progression of student understanding.     

On the influence of N on residual microstrain in cryomilled Ni

The factors that influence the development of residual microstrain during milling in a liquid nitrogen atmosphere, defined hereafter as cryomilling, are investigated. The residual microstrains in cryomilled Ni, processed under various cryomilling conditions, were examined by X-ray diffraction (XRD) and analyzed through the single line approximation (SLA) method. The average residual microstrains are determined to be in the range of 2×10⁻³ to 6×10⁻³. The residual microstrain on the (200) plane is higher than those on the other planes by 33 pct. The residual microstrain and its anisotropy in Ni are reduced after heat treatment at 800 °C for 1 hour. The measured microstrain is proposed to evolve from the presence of N and O as impurity atoms in the Ni lattice. Both N and O are introduced from the environment and then their solubility in Ni is enriched via the generation of defects that occurs during cryomilling. The stable site for N and O atoms in Ni is the octahedral site, and the sizes of N and O atoms exceed those of the octahedral site of Ni by 48 and 16 pct respectively. Accordingly, a lattice strain field is expected around interstitial N atoms that are located at octahedral sites. By comparing the crystal structure around the octahedral site, the stable site for impurity N atoms, in the Ni lattice with that of Ni₃N structure, the lattice strains are estimated to be in the range of 5 to 15 pct. The result shows that the (200) plane has strains that are 2 times higher than those in other planes, and this is argued to be the reason for the measured anisotropy of residual strain in Ni after cryomilling.     

Glass fiber-filled thermoplastics. I. Wall and processing effects on rheological properties

A systematic study of wall effects on the shear viscosity of short glass fiber-filled polypropylene and polystyrene is presented. The dependence of these effects on capillary radius, shear rate, temperature, and polymer matrix is examined. The “true” viscosity curves of these materials (free from wall effects) can be obtained by an extrapolation procedure. Breakage of glass fibers in the high shear-rate processes of extrusion and injection molding lead to an appreciable reduction of the viscosity of these materials and is probably the more important effect to take into account in these processes.     

Proton-exchange optical waveguides in Z-cut LiNbO/sub 3/ using toluic acid

Proton-exchanged planar waveguides were demonstrated in Z-cut LiNBO/sub 3/ using toluic acid as a new organic proton source. These waveguides exhibit a propagation loss of around 1 dB/cm, and a step refractive index profile with an index increase of 0.124 measured at 0.663 mu m. The diffusion rate was found to be lower than those obtained using the popular benzoic and phosphoric acids.<>     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

A circular crossed-field amplifier for in situ measurements, studyof reentrant beam effects, and comparison with numerical simulation

A low frequency, injected beam, circular format crossed-field amplifier has been designed and constructed for the purpose of studying electron-radio frequency wave interaction in reentrant devices. The device has been designed to allow in situ diagnostic probe measurements in the space between the anode and sole. The device has been operated in nonreentrant, fully reentrant, and reentrancy controlled configurations. Details of the design and operating parameters are described. Device characteristics are examined with respect to the amount of circulating charge or degree of reentrancy. A large increase in gain has been achieved from nonreentrant to the fully reentrant format. A gain of 7.2 dB has been obtained for the latter whereas only 3.8 dB has been obtained for the former with 30 mA of injected beam current. A maximum gain of 14.4 dB has been achieved for the fully reentrant configuration. Electron beam and noise measurements versus the degree of reentrancy have also been examined. Results from the nonreentrant amplifier performance have been directly compared with the MASK simulation code and good agreement has been obtained. These experiments will provide the basis for more detailed investigations on the effect of reentrancy on CFA operation and will also allow for the development of more accurate computer models of the reentrant system for numerical simulation of CFA operation     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².