Earth‐Abundant and Durable Nanoporous Catalyst for Exhaust‐Gas Conversion

Precious metals (Pt and Pd) and rare earth elements (Ce in the form of CeO₂) are typical materials for heterogeneous exhaust‐gas catalysts in automotive systems. However, their limited resources and high market‐driven prices are principal issues in realizing the path toward a more sustainable society. In this regard, herein, a nanoporous NiCuMnO catalyst, which is both abundant and durable, is synthesized by one‐step free dealloying. The catalyst thus developed exhibits catalytic activity and durability for NO reduction and CO oxidation. Microstructure characterization indicates a distinct structural feature: catalytically active Cu/CuO regions are tangled with a stable nanoporous NiMnO network after activation. The results obtained by in situ transmission electron microscopy during NO reduction clearly capture the unique reaction‐induced self‐transformation of the nanostructure. This finding can possibly pave the way for the design of new catalysts for the conversion of exhaust gas based on the element strategy.     

Cross-layer selective routing for cost and delay minimization in IEEE 802.11ac wireless mesh network

Wireless Networks - A Wireless Internet-access Mesh NETwork (WIMNET) provides scalable and reliable internet access through the deployment of multiple access points (APs) and gateways (GWs). In...     

Size of plastic region owing to blunting of the precrack tip andJ lc value in several types of structural steels

In this study, a three-point bendJ _lc fracture-toughness test was carried out using four types of structural steels at room temperature. The values of (γ _p)V, which represent the width of the region where the voids are located just ahead of the crack tip, were measured by Beacham's method [9] with the help of a scanning electron microscope (SEM). The experimental (γ _p) values and the theoretical values obtained using the finite element method (FEM) or calculated fromK at initiation are in good agreement. It was found that there is a certain linear relationship between (γ _p)Vand the stretched zone width (SZW), and an experimental relationship betweenJ _lc andσ _flow·(γ _p)V which may be expressed by the following equation: $$J_{lc} = 44.1 + 0.35\sigma _{{\text{flow}}} \cdot (\gamma _{\text{p}} )V_c KJ$$ whereσ _flow is the average value of the yield stress and the ultimate tensile strength. (γ _p)V _c represents the critical value of (γ _p)V. The numerical constant 44.1 kJ m^?2 is considered to be aJ _lc value for brittle fracture of the material tested, according to the authors' previous results. It is possible to calculateJ _lc if (γ _p)V _c can be measured.     

Heteroepitaxial growth of Zn1−xCdxSe on cleavage-induced GaAs (110) surface in ultra high vacuum

Zn_1−xCd_xSe epitaxial growth by molecular beam epitaxy (MBE) on the GaAs (110) surface cleaved in ultra high vacuum (UHV) was investigated. The growth mode of Zn_1−x Cd_xSe on GaAs (110) was not a simple Stranski–Krastanow type. At initial growth stage, growth mode was two-dimensional type. However, as the growth proceeds three-dimensional island growth and two-dimensional growth modes compete. As a result, two kinds of structures were spontaneously formed on the surface, pyramidal-shaped islands and ridge structures aligned to the [1 0] direction. Anisotropic in-plane strain relaxation on (110) is suggested as the formation mechanism of such structures.     

Extremely low noise InGaAs/InAlAs HEMT grown by MOCVD

MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.<>     

A consistent grayscale‐free topology optimization method using the level‐set method and zero‐level boundary tracking mesh

This paper proposes a level‐set based topology optimization method incorporating a boundary tracking mesh generating method and nonlinear programming. Because the boundary tracking mesh is always conformed to the structural boundary, good approximation to the boundary is maintained during optimization; therefore, structural design problems are solved completely without grayscale material. Previously, we introduced the boundary tracking mesh generating method into level‐set based topology optimization and updated the design variables by solving the level‐set equation. In order to adapt our previous method to general structural optimization frameworks, the incorporation of the method with nonlinear programming is investigated in this paper. To successfully incorporate nonlinear programming, the optimization problem is regularized using a double‐well potential. Furthermore, the sensitivities with respect to the design variables are strictly derived to maintain consistency in mathematical programming. We expect the investigation to open up a new class of grayscale‐free topology optimization. The usefulness of the proposed method is demonstrated using several numerical examples targeting two‐dimensional compliant mechanism and metallic waveguide design problems. Copyright © 2014 John Wiley & Sons, Ltd.     

Theoretical analysis of longitudinal mode coupling in external cavity semiconductor lasers

The single longitudinal mode behavior in long external cavity semiconductor lasers is discussed. Experimentally, the laser exhibits a single frequency oscillation even for an external cavity length of 100 cm. The mode selectivity of a composite cavity is shown to be insufficient to explain the experiments. Longitudinal mode coupling in semiconductor lasers is found to arise from an interference effect between the modes on the interband transition probability of electrons. Mode coupling equations are derived, which indicates that the single mode oscillation in long external cavity semiconductor lasers is brought about when the coupling strength goes beyond a critical value. It is shown that the effect of the hole burning in the external cavity semiconductor lasers is similar to that in the solitary laser.