排序方式: 共有87条查询结果,搜索用时 15 毫秒
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本文基于自主研发的InP基高电子迁移率晶体管工艺设计并制作了一款W波段单级低噪声放大单片毫米波集成电路。共源共栅拓扑结构和共面波导工艺保证了该低噪声放大器紧凑的面积和高的增益,其芯片面积为900 μm×975 μm,84 GHz-100 GHz频率范围内增益大于10 dB,95 GHz处小信号增益达到最大值为15.2 dB。根据调查对比,该单级放大电路芯片具有最高的单级增益和相对高的增益面积比。另外,该放大电路芯片在87.5 GHz处噪声系数为4.3 dB,88.8 GHz处饱和输出功率为8.03 dBm。该低噪声放大器芯片的成功研制对于构建一个W波段信号接收前端具有重要的借鉴意义。 相似文献
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40GHz InGaAs/InP CML 结构静态分频器 总被引:1,自引:1,他引:0
Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology's ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2:1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic(CML) with ... 相似文献
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A 12.5 Gbps 1:16 demultiplexer(DEMUX) integrated circuit is presented for multi-channel high-speed data transmission.A novel high-speed synchronizing technique is proposed and integrated in this DEMUX chip. Compared with conventional synchronizing techniques,the proposed method largely simplifies the system configuration. The experimental result demonstrates that the proposed circuit is effective in two-channel synchronization under a clock frequency of 12.5 GHz.The circuit is realized using 1μm GaAs heteroj unction bipolar transistor technology with die area of 2.3×2.3 mm~2. 相似文献
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介绍了一种实现低成本、高功率、高散热性能耿氏管的工艺制备流程,利用分子束外延生长技术(MBE)在高掺杂的InP衬底上生长n n+型的一致性掺杂外延结构,在外延结构正面利用电子束蒸发Ge/Au/Ni/Au作为器件阴极和电镀金制备作为散热层,背面通过化学湿法腐蚀形成台面(MESA)。在不同的温度下进行了退火对比实验,研究了阴极合金形成良好欧姆接触的温度条件。结果表明:退火温度为450 ℃时形成的金属电极的接触效果最好。关于耿氏管的正面反面制备工艺简便易行,利用Ge/Au/Ni/Au制备金属电极得到了良好的欧姆接触性能,用氯基溶液进行了湿法腐蚀实验得到了较好的垂直台面(MESA)。该制备方法有望实现优良性能的耿氏器件。 相似文献
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介绍基于耿氏效应的器件在太赫兹领域的研究,详细地阐述耿氏二级管的原理、工艺流程、关键技术的解决和耿氏二极管频率和功率的提高等.重点介绍耿氏二极管的封装工艺和耿氏二极管腔体的具体结构.系统论述通过制备腔体需要的关键尺寸,如腔体内部尺寸、波导型号,从而提取基波与谐波,并提出其提高频率和功率的途径. 相似文献
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We present a 10 Gsps 8 bit digital-to-analog converter (DAC) with a novel built-in self-test (BIST) circuit, which makes it possible to evaluate the DAC's performance without a complicated test setup. Design con- siderations and test results are included. According to the test results, the DAC core and the BIST circuit are able to work under 10 GHz. The chip is fabricated in 0.18μm SiGe HBTs with ft of 100 GHz. The DAC core occupies a die size of 260 × 250μm^2. 相似文献
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在多目标的任务条件下,网格任务调度不仅要完成多目标的优化工作,还要提升蚂蚁算法的资源利用率。基于蚂蚁算法的网格任务调度,属于集群计算机处理系统,其中每个数据库分布节点都有着较高的独立性。本文主要对基于蚂蚁算法的网格任务调度进行研究,通过分析蚂蚁算法的改进策略,得出蚂蚁算法的网格任务调度的有效性与仿真结果。 相似文献
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SDD定义的InP DHBT大信号模型 总被引:1,自引:1,他引:0
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs. 相似文献
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从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型. 同时针对自有工艺和器件特性,采用SDD (symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型. 模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性. 相似文献