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提出了一种适合于峰值电流模DC-DC转换器的新型多功能误差放大器电路.与斜坡电压信号结合可实现软启动功能,实现了从启动阶段到稳定工作状态的平滑过渡,无扰动出现,并有效地消除了启动阶段的浪涌电流和电压过冲;同时还具有最大电流限制和模式切换功能.该误差放大器集成到一款峰值电流模升压型DC-DC转换器中,电路采用CSMC 0.5μm BCD工艺实现.仿真结果表明:3.5V的输入电压下,误差放大器消耗的静态电流为4.48μA,并且能够实现软启动、最大电流限制、模式切换功能.电路具有简单易实现,功耗低的特点. 相似文献
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Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 = 10 W, RF2 = 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices. 相似文献