1983年全国砷化镓和有关化合物学术交流会在上海召开

1983年全国砷化镓及有关化合物学术交流会于1983年11月21日至25日在上海召开。会议由中国金属学会半导体学术委员会委托上海市金属学会、冶金部有色金属研究总院和中科院上海冶金研究所主办。参加会议的代表除来自国内53个单位的127名外,还邀请4名国外学者。会议收到论文135篇。会上共宣读119篇,其中以英文宣读的有15篇。这些论文涉及熔体生长、液相外延、气相外延和分子束外     

THE CADMIUM INCORPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl_3-H_2 SYSTEM

The incorporation and the behavior of impurity Cd in the VPE of GaAs are studied by usingelemental Cd as a dopant in Ga-AsCl_3-H_2 system.The distribation coefficient of Cd and itssolubility in GaAs are found to be 0.01—0.001 and 4×10~(18)cm~(-3) respectively.The relationshipbetween the electrical properties and epitaxial parameters is discussed.As a result,the epilayerswith p-n or p~+-p-n junction were prepared using elemental S and Cd doping techniques.Thematerials obtained in this way have a smooth surface morphology and a good interfacial properties.     

嵌入式Linux下MiniGUI的编译、移植与实现

随着计算机硬件的高度集成和Linux系统的快速发展,便携智能设备的应用越来越普遍。嵌入式Linux系统的逐渐成熟,导致相应的轻量图形用户界面的开发也日趋重要,而MiniGUI是其中比较出色的GUI系统。本文分析了Mini—GUI的主要特征、分层结构和版本规划,介绍了MiniGUI V1．3．3移植的前期准备,阐述了在EBD9261开发板和Linux Kernel2．6．15中,MiniGUI V1．3．3的交叉编译和移植的实现过程,并对基于MiniGUI的嵌入式系统开发做了初步展望。     

机载测量系统在大比例尺地形图测绘中的应用——以雄安新区为例

针对传统大范围基础测绘地形图更新工作资金投入多、安全隐患大、外业工作周期较长等问题,本文将机载测量系统应用到大范围地形图测绘中,详细介绍了机载激光雷达和航空摄影测量的系统检校、外业数据采集、内业处理等方法。通过工程应用实例表明,采用机载测量系统可以满足1∶2000地形图测绘工作的要求,有效减少外业测量工作量,是大范围基础地形图测绘工作的有效手段。     

基于MSP430的定时器自动老化试验台设计与实现

该文设计一种基于MSP430的伺服电机控制系统,包括硬件和软件设计。该系统应用于定时器自动老化试验台的横向以及纵向的运动模块中,通过MSP430产生PWM输出以生成控制信号,能够实现带动摄像头在两台伺服电机同步的配合下,在垂直面上对定时器进行拍照取样。     

Preparation of Ga_(1-x)In_xAs_(1-y)Sb_y by MOCVD

The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD (double crystal X-raydiffraction)spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm~2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA(electronic probe microanalysis)data and determined by FTIR(Fourier transformedinfrared spectroscopy)measurement.     

Fe-Cu-C和Fe-Cu-Co-C熔体的热力学性质

本文测得碳在Fe-Cu-C和Fe-Cu-Co-C系中的溶解度和分层数据,计算这些体系中Cu和Fe的活度系数以及碳对Cu和Fe活度系数的影响。结果表明,随着体系中碳量的增加,相应地Cu活度系数增加,而Fe活度系数减少。在这些数据的基础上,还计算了Fe-Cu-C系的一级、二级活度相互作用系数,等活度时自由能相互作用系数和焓相互作用系数,并估计了Cu量对碳溶解过剩焓的影响。计算结果与其它已报道的Fe-j-C系相比较,发现这些热力学性质与原子序数之间有一定的规律。     

Growth and Characterization of AIGaAsSb by MOCVD

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MOCVD Compound Semiconductor Materials and theirApplications in China

The recent progress of MOCVD compound semiconductor materials in China was reviewed with emphasis on MOCVD chemistry, Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor materials and their applications in optoelectronic and microelectronic devices. Several suggestions for further development of MOCVD materials in China were proposed.     

提高加热不燃烧卷烟专用薄片导热特性的研究

研究了添加纳米石墨烯、碳纳米管、纳米氧化铝、碳化硅4种导热助剂对薄片导热性能的影响.结果表明,添加纳米石墨烯的薄片导热性能最好.与未添加导热助剂的薄片相比,纳米石墨烯添加量为3.2％时,薄片导热系数增幅达95.39％.进一步研究了不同水分条件下,纳米石墨烯用量对薄片导热性能的影响.结果表明,薄片导热系数随纳米石墨烯用量...