长效LHRH拮抗剂的设计、合成和生物活性

根据抗蛋白酶降解的长效肽设计思想, 合成了一系列新型结构的LHRH拮抗剂类似物. 体内生物活性评价结果表明, 所设计的多肽具有比母体肽和阳性对照更长的体内抑制睾酮作用时间和较低的最低有效剂量, 证实了该设计思想的可行性, 并为开发长效LHRH拮抗剂药物提供了新的候选化合物.     

土壤全氮田间Vis/NIR光谱测定方法研究

应用Vis/NIR光谱直接测定原始土壤属性具有重要的研究和应用价值。选取我国中部水稻土和潮土共103个土样,对比分析了两种土壤在田间环境下的湿态(R_w)和干态(R_d)光谱特征。采用相对变换光谱方法对湿态光谱进行了处理,结果表明该方法能够有效降低土壤水分的干扰和消除部分噪声,得到的变换光谱(R_n)与干态光谱在信息量和特征方面具有很高的相似度。以此建立了土壤TN的PLS回归估计模型,检验结果表明,R_n对水稻土和潮土TN的估计模型精度均高于R_w,修正判定系数分别从0.26和0.46提高到0.53和0.62。因此,相对光谱变换方法能够有效提高应用田间土壤光谱估计土壤参数的能力,建立的PLS模型可以用于测定TN含量,研究结果可作为实现田间实时分析土壤属性的工作基础。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

几何参数对喷射器性能的影响分析

运用计算流体动力学软件Fluent对喷射器进行数值模拟,研究了工作喷嘴喉部直径、等截面混合室直径和长度等几何参数对喷射器性能的影响,并对数值模拟结果进行了分析。研究表明:在一定的工况下,工作喷嘴及等截面混合室对喷射器性能有极大的影响,存在最佳的喉部和混合室直径使得喷射系数最大;随着混合室长度的增加,喷射器的喷射系数将逐渐降低。     

超疏水聚合物表面的水滴蒸发模拟

基于质量守恒和Fick第一定律，模拟了水滴在超疏水聚合物表面的蒸发全过程．研究从以往的接触角<90±扩展到>150±，液滴形貌扩展为椭球球帽模型进行疏水表面蒸发模拟．水滴在超疏水PC和FPU/PMMA表面蒸发的实验结果显示，计算的椭球球帽模型可以更好的反映出液滴接触角和高度的变化情况，并且不同聚合物表面接触角的相同变化趋势也揭示出微-纳二级结构表面结构不仅影响液滴接触角，也影响液滴蒸发模式．     

Responses of Issatchenkia terricola WJL-G4 upon Citric Acid Stress

This study aimed to elucidate the responses of a novel characterized Issatchenkia terricola WJL-G4 against citric acid stress by performing physiological analysis, morphology observation, and structural and membrane fatty acid composition analysis. The results showed that under citric acid stress, the cell vitality of I. terricola WJL-G4 was reduced. The cell morphology changed with the unclear, uncompleted and thinner cell wall, and degraded the cell structure. When the citric acid concentration was 20 g/L, I. terricola WJL-G4 could tolerate citric acid and maintain the cell structure by increasing the intracellular pH, superoxide dismutase activity, and contents of unsaturated fatty acids. As the citric acid concentration was ≥80 g/L, the stress has exceeded the cellular anti-stress ability, causing substantial cell damage. The cell membrane permeability, the content of membrane lipids, malondialdehyde and superoxide anion increased, but the intracellular pH and superoxide dismutase activities decreased, accompanying the increase of citric acid concentrations. The findings of this work provided a theoretical basis for the responsive mechanism of I. terricola WJL-G4 under high concentrations of citric acid, and can serve as a reference for biological acid reduction in fruit processing.     

1,4-bis[2-(4-pyridyl)ethenyl]-benzene衍生物热致变色研究

本文制备了三种在1,4-bis[2-(4-pyridyl)ethenyl]-benzene(bp-eb)上接枝不同烷基链长度的热致变色材料DC8、DC12、DC16. 在365 nm激发光下,随着温度升高,它们呈现出荧光颜色的改变,这种改变来自于晶体态与无定形态之间的转变. 此外,DC16也呈现出光致变色的性质. 通过差示扫描量热法测试得到的相转变温度高于实验过程中荧光颜色改变时的温度. 因此,这种变色行为来自于光与热共同作用的结果. 乙醇可以使粉末变回起始的晶体状态,从而使荧光颜色恢复,实现热致变色行为的可逆. 本研究对理解热致变色分子的结构-性质关系,指导热致变色分子设计具有重要意义.     

In situ measurement on nonuniform velocity distributionin external detonation exhaust flow by analysis ofspectrum features using TDLAS

Instantaneous and precise velocity sensing is a critical part of research on detonation mechanism and flow evolution.This paper presents a novel multi-projection tunable diode laser absorption spectroscopy solution,to provide a real-time and reliable measurement of velocity distribution in detonation exhaust flow with obvious nonuniformity.Relations are established between overlapped spectrums along probing beams and Gauss velocity distribution phantom according to the frequency shifts and tiny variations in components of light-of-sight absorbance profiles at low frequencies analyzed by the fast Fourier transform.With simulated optical measurement using H2O feature at 7185.6 cm-1 carried out on a phantom generated using a simulation of two-phase detonation by a two-fluid model,this method demonstrates a satisfying performance on recovery of velocity distribution profiles in supersonic flow even with a noise equivalent absorbance up to 2×10^-3.This method is applied to the analysis of rapidly decreasing velocity during a complete working cycle in the external flow field of an air-gasoline detonation tube operating at 25 Hz,and results show the velocity in the core flow field would be much larger than the arithmetic average from traditional tunable diode laser doppler velocimetry.This proposed velocity distribution sensor would reconstruct nonuniform velocity distribution of high-speed flow in low cost and simple operations,which broadens the possibility for applications in research on the formation and propagation of external flow filed of detonation tube.     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.