Physical properties and phase diagram of NaFe_(1-x)V_xAs

We grew a series of NaFe_1-xV_x As(0 ≤ x ≤ 0.03) single crystals and performed the measurements of resistance,magnetic susceptibility, and specific heat to study the superconducting phase diagram by doping V into Na Fe As. Both the structural and the spin-density-wave(SDW) transitions are slightly suppressed by V-doping. While superconducting transition temperature is enhanced to the maximum value of 15 K when the optimal doping level x = 0.007 and then is suppressed rapidly with further V-doping, displaying a small superconducting dome. Our results suggest that V-impurities should act as strong magnetic scattering centers which cause the sharp suppression of superconductivity in NaFe_1-xV_x As.     

Pressure-induced phase transitions in single-crystalline Cu4Bi4S9 nanoribbons

In situ angle dispersive synchrotron X-ray diffraction and Raman scattering measurements under pressure are em- ployed to study the structural evolution of Cu4Bi4S9 nanoribbons, which are fabricated by using a facile solvothermal method. Both experiments show that a structural phase transition occurs near 14.5 GPa, and there is a pressure-induced re- versible amorphization at about 25.6 GPa. The electrical transport property of a single Cu4Bi4S9 nanoribbon under different pressures is also investigated.     

“111”铁基超导体系的发现及压力效应研究

2008年发现的铁基超导体引发了全球超导研究的热潮。在本研究小组发现的铁基“111”体系的基础上,重点介绍“111”体系铁基超导体的压力效应,包括:“111”体系的3个组元LiFeAs、LiFeP、NaFeAs的超导转变随压力的演化;运用压力调控,获得“111”体系的最高超导转变温度;结合同步辐射技术,发现压力调控的“111”型铁基超导体的等结构演化以及对超导起关键作用的As-Fe-As键长和键角与超导转变温度的关联。     

“111”型铁基超导材料研究进展

“111”型铁基超导体系包含LiFeAs,NaFeAs和LiFeP三个组员.这三个组员的晶体结构简单,具有非极性解离面等特点,在铁基超导物理机理研究中发挥着独特的作用.本文简要介绍“111”型铁基超导体的研究进展.     

面向应用的新一代稀磁半导体研究进展

稀磁半导体具有能同时调控电荷与自旋的特性,是破解摩尔定律难题的候选材料之一.我们团队率先提出了稀磁半导体中自旋和电荷掺杂分离的机制,探索并研制了新一代稀磁半导体材料,为突破经典稀磁半导体材料的制备瓶颈提供了有效解决方案.以(Ba,K)(Zn,Mn)₂As₂等为代表的新一代稀磁半导体,通过等价态的Mn掺杂引入自旋、异价态的非磁性离子掺杂引入电荷,成功实现了230 K的居里温度,刷新了可控型稀磁半导体的居里温度记录.本文将重点介绍几种代表性的新一代稀磁半导体的设计与研制、新一代稀磁半导体的综合物性表征、大尺寸单晶生长以及基于单晶的安德烈夫异质结研制.我们团队通过新一代稀磁半导体的新材料设计研制、综合物性研究、简单原型器件构建的“全链条”模式研究,开拓了自旋电荷分别掺杂的稀磁半导体材料研究领域,充分展现了自旋和电荷掺杂分离的新一代稀磁半导体材料潜在应用前景.     

A Simple System to Measure Superconducting Transition Temperature at High Pressure

A simple hydride system is fabricated to measure the superconducting transition temperature 1c unaer hign pressure using a diamond anvil cell （DAC）. The system is designed with centrosymetric coils around the diamond that makes it easy to keep balance between the pick-up coil and the inductance coil, while the superconducting states can be modulated with a low-frequency small external magnetic field. Using the device we successfully obtain the Tc evolution as a function of applied pressure up to 10 GPa for YBa2 Cu3 O6＋δ superconductor single crystal.     

Development of Simple Dip-Stick-Type Uniaxial Stress Actuator for Alternating-Current Susceptibility Measurements

A simple dip-stick type uniaxial stress actuator for ac-susceptibility measurement is designed. Target pressure can be achieved by smooth and continues work carried out using a combination of light weight micrometer and spring. The magnitude of the pressure is directly calculated from the force constant of the spring and the surface atea of the sample. Benchmark on the quality of the data under uniaxial pressure is confirmed by the Piezo resistance measurements on [100] oriented n-type Si. The system is examined and calibrated with the standard paramagnetic Gd2O3. Further, the device performance, generation of constant uniaxial pressure against temperature variations, is assured by investigating the ac-magnetic susceptibility measurements on highly anisotropic La1.25Sr1.75Mn2O7 bilayer single crystal.     

Ba2CuO2Cl2的高压合成及原位高压结构稳定性研究

 在高温高压下合成出了单相的Ba₂CuO₂Cl₂化合物,在高压下对该化合物晶体结构的稳定性进行了研究。结果表明,在实验测量的压力范围内,Ba₂CuO₂Cl₂化合物的晶体结构是稳定的,并且其压缩性表现出较强的各向异性,计算得到了Ba₂CuO₂Cl₂化合物的体弹模量和状态方程。     

新型带宽调制型Mott化合物的高压合成及其金属化相变

利用高温高压条件，制备了（SrCa）CrO3系列带宽可调型的钙钛矿Mort化合物。在10 GPa的外加压力下，观察到SrCrO3的绝缘体-金属化相变。原位高压x射线衍射实验表明，Sr／CaCrO3晶体结构在0-9 GPa压力范围内保持稳定。但SrCrO3在4 GPa时存在着电子结构变化所引起的等结构相变，表现为体弹性模量的反常软化。此外，由于电子关联效应，磁性和热输运性质的测试结果表明了材料的奇异电子态特征。     

高压下SiC增强Al基纳米复合材料

 采用高压技术合成了纳米尺寸SiC颗粒增强Al基复合材料,针对合成中增强相与基体的化学反应行为、增强相与基体界面结合等问题进行了研究。X射线衍射、高分辨率、正电子湮没以及显微硬度结果表明：高压技术在合成SiC_p/Al纳米复合材料中,具有抑制界面反应、提高致密度、改善界面结合等优点。