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Effects of pressure and/or magnetism on the critical superconducting temperature(Tc)ofδ-Mo N single crystal were investigated using a Maglab system.Theδ-Mo N single crystal was synthesized at extreme conditions of high pressure and high temperature.The carrier density ofδ-Mo N single crystal as a function of applied pressure was determined using Hall coefficient measurement. 相似文献
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采用金刚石压砧高压装置,研究了双钙态矿结构化合物Sr2FeNbO6及其掺杂物Sr2FeMo0.3Nb0.7O6在室温下,20 GPa内电阻和电容随压力的变化,并发现Sr2FeNbO6在7.5 GPa左右压力下发生了相变,而Sr2FeMo0.3Nb0.7O6的相变发生在2.8 GPa左右。并结合这两个样品的高压下的同步辐射能散X射线衍射实验,进一步证明了这两种相变是电子结构相变引起的。 相似文献
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<正>多年来,许多物理学家宣称他们通过加压将氢气转变为金属态,但是却没有人能给出令人信服的证据。现在法国研究人员认为他们已经找到了确凿的证据证实了氢的金属化,他们构建了新装置用来给极小样品加压,并且观察到了金属氢的红外吸收现象。然而,还是有研究者仍不信服这一结果,认为只有电学测量才能提供最充分的证据。人们对于足够高的压力能把氢 相似文献
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In the High-Pressure Synergetic Measurements Station(HP-SymS) of the Synergic Extreme Condition User Facility(SECUF), we will develop ultrahigh-pressure devices based on diamond-anvil cell(DAC) techniques, with a target pressure up to 300 GPa. With the use of cryostat and magnet, we will reach 300 GPa–4.2 K–9 T and conduct simultaneous measurements of the electrical-transport property and Raman/Brillouin spectrascopy. With resistance heating and laser heating,we will reach temperatures of at least 1000 and 3000 K, respectively, coupled with Raman/Brillouin spectroscopy measurements. Some designs of supporting devices, such as a femtosecond laser gasket-drilling device, electrode-deposition device, and the gas-loading device, are also introduced in this article. Finally, we conclude by providing some perspectives on the applications of the DAC in related research fields. 相似文献
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用高温高压法、在1 260 ℃和5.0 GPa条件下,成功制备出电子型掺杂层状钙钛矿结构锰氧化物La2-2xCa1+2xMn2O7(x=1.0~0.8)系列样品。样品的粉末X射线衍射实验和Rietveld精修结构分析表明,所制样品具有Sr3Ti2O7型四方结构,空间群为I4/mmm。随着电子浓度的增加,MnO6八面体畸变程度增大,晶胞体积增加。同时样品的磁化强度随La的掺入、x的增加而增强,反铁磁有序温度TN提高。由于双交换作用减小,样品的电阻增加。在测量温度范围内,没有观测到磁电阻效应。 相似文献