热峰模型在聚碳酸酯非晶化潜径迹中的应用

为了描述快重离子在聚合物中的潜径迹行为，用不同能量的快重离子 (1158GeVFe5656,1755GeVXe136¹³⁶及2636GeVU238²³⁸) 辐照 叠层半结晶聚碳酸酯膜 (Makrofol KG型)，结合x射线衍射测量技术，在较宽的电子能损 (1 9—171keV/nm)和离子注量（5×1010¹⁰—3×1012¹² cm-2^-2）范围研究了离子在半 关键词： 离子辐照 聚碳酸酯 非晶化 潜径迹     

静态随机存储器单粒子效应的角度影响研究

利用兰州重离子加速器加速的高能离子研究了入射角度对IDT71256的单粒子翻转截面和多位翻转比例的影响.研究表明：在大角度掠射轰击下单粒子翻转截面的增大包括了多位翻转的贡献；离子在器件敏感层中沉积的能量及其横向分布是影响多位翻转的两个重要参数，IDT71256发生三位以上多位翻转的比例随着离子入射角度的增大而增加. 关键词： 静态存储器 单粒子翻转 多位翻转 沉积能量 横向分布     

C-N化合物合成研究

用能量 50 - 1 1 0 ke V的 N离子在低于 80°C温度下注入 CVD法合成的金刚石薄膜后 ,分别用 X射线光电子谱、红外谱和拉曼谱检测注入后的薄膜中是否形成了 C- N化合物 .结果表明注入后的薄膜中存在有 3种化学键态的 C- N化合物 ,且低能离子注入更有利于 C- N化合物的形成 .由于在注入区内形成了大量的 C- N单键 ,这有利于β- C3N4 的合成 .对 C- N化合物薄膜的场发射特性也做了研究.Diamond films were implanted with 50-110 keV N ions to the dosage of 1×10 17 ions/cm 2 at the temperature below 80 °C . The possibility of the formation of C N compounds in diamond films was investigated by means of X ray photoelectron spectroscopy (XPS), X ray diffraction analysis (XRD), Fourier transform infrared absorption spectroscopy (FTIR) and Raman spectroscopy. New evidence has been presented that plenty of C-N single bonds which are necessary ...     

中科院近物所的SHIM物理研究

简要介绍了 SHIM物理及其近 1 0年来国际研究的最新进展 ,重点介绍了中国科学院近代物理研究所在该学科研究中所获得的部分最新研究结果 ,展望了 SHIM物理的发展趋势.Swift Heavy Ion in Matter(SHIM) physics and its new progresses of research in the world in recent ten years were briefly introduced. The results obtained on SHIM physics including strong electronic excitation effect in solid materials and its applications, as well as highly charged state atomic physics, obtained by Institute of Modern Physics, the Chinese Academy of Sciences were mainly introduced. The tendency of the discipline in future was presented.     

快重离子在固体材料中的强电子激发效应

简要介绍了快重离子在固体材料中强电子激发效应的基本特点、研究现状和在HIRFL上获得的部分实验结果,并对今后的研究工作进行了展望。In this paper the outline of intense electronic excitation effects in solid materials induced by swift heavy ions and international research status were briefly reviewed. Few examples of experimental results obtained on HIRFL were presented. And also the developing tendency in the field was looked into the future.     

高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

高能氩离子在聚苯乙烯中的电子能损效应研究

用1.4GeV氢离子对多层堆叠的厚约53m的聚苯乙烯薄膜在室温和真空条件下进行了辐照;对辐照后的样品进行了从红外到紫外的光吸收测量.测量结果显示,材料经高能红离子辐照后发生化学降解,降解过程强烈依赖于电子能损;在能量沉积密度很高的径迹芯中,分子主链和苯环均遭到破坏;在电子能损高于0.77keV/nm时有炔基产生.     

快重离子在凝聚态物质中引起的效应——电子能损效应

简述了快重离子在凝聚态物质中引起的效应——电子能损效应,主要包括缺陷的产生和潜径迹的形成、各向异性的塑性形变、由弹性碰撞产生的缺陷的部分退火、相变（非晶化）,以及尝试性的理论解释．     

He 离子注入引起的高纯钨硬化

完成了不同注量或温度下100 keV 的He 离子注入高纯钨的实验,并利用纳米压痕技术测量了材料的微观力学性能。所有注入样品的纳米硬度值都高于未注入样品的纳米硬度值。对于室温注入样品,随着注量的增加,样品抗弹性变形能力下降;当注量不高于5x1017 ions/cm2 时,钨的纳米硬度峰值随着注量的增加而增加;注量为1x1018 ions/cm2 的钨样品的纳米硬度峰值反而降低。高温注入样品的抗弹性变形能力优于室温注入样品的抗弹性变形能力;随着注入温度的增加,样品的平均纳米硬度值和弹性模量略有下降。分析讨论了He 注入钨硬化和抗弹性形变能力降低的可能原因。Tungsten has been selected as divertor materials in fusion reactors because of its high thermal conductivity,high melting point, low expansion coefficient and high threshold energy for sputtering etc. The paper presents the hardening behaviour of high pure tungsten by 100 keV He+ with different fluences from 5x1016 ions/cm2 to 1x1018ions/cm2 at room temperature, and with fluence of 1x1018 ions/cm2 at higher temperatures (400, 600 and 800 °C). The microscopic mechanical properties of these samples were investigated by nano-indentation technology. The results show that all of the implanted samples harden obviously. The reason for hardening may be that defects of interstitial dislocation loops or dense helium bubbles etc induced by helium implantation obstacle the movement of dislocation. The peak nanohardness of the samples increased with the fluences increasing when the fluence is not more than 5x1017 ions/cm2, while the nano-hardness value of the implanted sample with the fluence of 1x1018 ions/cm2 decreases and the nano-hardness changes little in the region of 50 nm to 200 nm from surface. For all the implanted samples with 1x1018 ions/cm2 at higher temperatures, their nano-hardness values are similar, but show a trend of decrease with increasing temperature.The reason may be the decrease of the defects’ density during implantation at higher temperatures. In addition, the capability of resisting deformation for the implanted tungsten reduces with increasing fluence and increases a little at higher temperatures.     

Ar离子辐照单晶Si引起的顺磁缺陷研究

采用电子顺磁共振研究了112MeVAr离子50K以下的低温辐照的单晶Si中缺陷产生和退火效应.结果表明:Ar离子辐照Si引起了中性四空位(Si-P3心).非晶化区域等缺陷的形成,Si-P3心分布在电子能损起主导作用的辐照区域,并在200℃的退火温度消失,伴随着四空位的退火,复杂的空位团,如Si-P1心.Si-A11心等出现,并保持到较高的温度.孤立的非晶区域的完全再结晶发生在350℃左右的退火温度,理论估算表明低剂量Ar离子辐照Si产生的非晶区域的半径分布在16-20A之间,定性地讨论了结果.