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42.
Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor 下载免费PDF全文
Electromagnetic field distribution in the vertical metal
organic chemical vapour deposition (MOCVD) reactor is simulated by
using the finite element method (FEM). The effects of alternating
current frequency, intensity, coil turn number and the distance
between the coil turns on the distribution of the Joule heat are
analysed separately, and their relations to the value of Joule heat
are also investigated. The temperature distribution on the
susceptor is also obtained. It is observed that the results of the
simulation are in good agreement with previous measurements. 相似文献
43.
Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor 下载免费PDF全文
This paper studies the effect of drain bias on
ultra-short p-channel metal-oxide-semiconductor field-effect
transistor (PMOSFET) degradation during negative bias temperature
(NBT) stress. When a relatively large gate voltage is applied, the
degradation magnitude is much more than the drain voltage which is
the same as the gate voltage supplied, and the time exponent gets
larger than that of the NBT instability (NBTI). With decreasing
drain voltage, the degradation magnitude and the time exponent all
get smaller. At some values of the drain voltage, the degradation
magnitude is even smaller than that of NBTI, and when the drain
voltage gets small enough, the exhibition of degradation becomes
very similar to the NBTI degradation. When a relatively large drain
voltage is applied, with decreasing gate voltage, the
degradation magnitude gets smaller. However, the time exponent
becomes larger. With the help of electric field simulation, this
paper concludes that the degradation magnitude is determined by the
vertical electric field of the oxide, the amount of hot holes
generated by the strong channel lateral electric field at the
gate/drain overlap region, and the time exponent is mainly
controlled by localized damage caused by the lateral electric
field of the oxide in the gate/drain overlap region where hot carriers
are produced. 相似文献
44.
Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process 总被引:2,自引:0,他引:2 下载免费PDF全文
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process
have been fabricated and characterized. For the devices with channel length
of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for
n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate
n-MOSFET was 150 times less than that of a conventional planar n-MOSFET.
These results demonstrate that groove-gate MOSFETs have excellent
capabilities in suppressing short-channel effects. It is worth emphasizing
that our groove-gate MOSFET devices are fabricated by using a simple process
flow, with the potential of fabricating devices in the sub-100nm range. 相似文献
45.
Taking the actual operating condition of complementary metal oxide
semiconductor (CMOS) circuit into account, conventional direct
current (DC) stress study on negative bias temperature instability
(NBTI) neglects the detrapping of oxide positive charges and the
recovery of interface states under the `low' state of p-channel metal
oxide semiconductor field effect transistors (MOSFETs) inverter
operation. In this paper we have studied the degradation and recovery
of NBTI under alternating stress, and presented a possible recovery
mechanism. The three stages of recovery mechanism under positive bias
are fast recovery, slow recovery and recovery saturation. 相似文献
46.
A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I-V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits. 相似文献
47.
This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3. 相似文献
48.
基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因. 相似文献
49.
采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现:应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应
关键词:
AlGaN/GaN HEMT器件
表面态(虚栅)
势垒层陷阱
应力 相似文献
50.
Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing. 相似文献