Angle-sensitive and fast photovoltage of silver nanocluster embeded ZnO thin films induced by 1.064-μm pulsed laser

Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from –90o to 90o, its peak value and the polarity varied regularly with the angle of incidence of the 1.064-μ m pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached ～2 ns with an open-circuit photovoltage of ～2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector.     

利用脉冲激光沉积技术在双轴织构的Ni基带上外延CeO2薄膜

利用脉冲激光沉积技术在氢还原气氛下成功地在双轴织构的Ni基带上外延了高质量的CeO₂薄膜. x射线衍射θ—２θ扫描和ω扫描结果表明，CeO₂薄膜在Ni基带上呈c轴方向生长，存在很强的平面外织构；极图和φ扫描显示它具有良好的平面内织构. Ni基片上织构的CeO₂薄膜为进一步在其上外延高质量的YBa₂Cu₃O_7-x超导薄膜提供了很好的模板. 关键词： 双轴织构的Ni基带 2薄膜')" href="#">CeO₂薄膜 脉冲激光沉积     

利用脉冲激光沉积技术在双轴织构的Ni基带上外延CeO2薄膜

利用脉冲激光沉积技术在氢还原气氛下成功地在双轴织构的Ni基带上外延了高质量的CeO2薄膜.x射线衍射θ-2θ扫描和ω扫描结果表明,CeO2薄膜在Ni基带上呈c轴方向生长,存在很强的平面外织构;极图和ψ扫描显示它具有良好的平面内织构.Ni基片上织构的CeO2薄膜为进一步在其上外延高质量的YBa2Cu3O7-x超导薄膜提供了很好的模板.     

GaAs/Ga1-xAlxAs半导体量子阱光辐射-热离子制冷

采用数值计算方法分析了GaAs/Ga_1-xAl_xAs 半导体量子阱的光 辐射-热离子制冷. 以漂移-扩散模型为基础，通过电流连续性方程和泊松方程自洽地计算出在外加正向偏压的 条件下半导体内部的载流子分布情况，并在此基础上计算了阱内载流子的发光复合和俄歇复 合，从而确定了半导体异质结量子阱光辐射-热离子制冷的最优条件.进一步分析了不同Al组 分的Ga_1-xAl_xAs材料以及不同的掺杂浓度对制冷效果的影响， 为该领域的实验工作提供了极有价值的参考. 关键词： 半导体异质结 光辐射 制冷     

在太赫兹波段的开口共振环的不同开口形状对透过率频谱的影响

通过对不同开口形状的太赫兹(THz)波段共振环(SRR)的有限时域差分(FDTD)模拟,发现了SRR不同开口形状在发生共振时对开口间距的平均值具有相同的透过率频谱分布的均值效应;并且观察到了在开口边缘很尖的特殊条件下,SRR开口将出现导通现象.此结果可为今后SRR开口工艺设计与质量控制提供参考,也可为SRR工作机理的进一步分析研究提供有关的依据. 关键词： 太赫兹 开口共振环 开口形状 FDTD     

Noether‘s theorem of a rotational relativistic variable mass system

Noether‘s theory of a rotational relativistic variable mass system is studied.Firstly,Jourdain‘s principle of the rotational relativistic variable mass system is given.Secondly,on the basis of the invariance of the Jourdain‘s principle under the infinitesimal transformations of groups,Noether‘s theorem and its inverse theorem of the rotational relativistic variable mass system are presented.Finally,an example is given to illustrate the application of the result.     

Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.     

搭建基础物理训练平台,培养学生的自主学习能力

结合基础物理课堂教学,在我校的创新班、卓越班和普通班中,针对学生的不同特点,因材施教,培养学生自主学习能力。同时利用物理第二课堂教学平台,通过指导学生参与科技创新、建立及运行学生团体-物理协会和组织学生参加物理竞赛,并使用网络辅助教学系统等,搭建了基础物理训练平台,多途径培养学生自主学习能力,经过几年来的探索与实践,取得了良好的效果和令人满意的教学成果。     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.     

Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film

The SnO_2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap(~2.4 e V) which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 m J/mm~2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon.All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.