Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

Self-Assembly of TBrPP-Co Molecules on an Ag/Si（111） Surface Studied by Scanning Tunneling Microscopy

Self-assembly of TBrPP-Co molecules on a Si（111）-√3t×√3 Ag substrate is studied by low-temperature scanning tunneling microscopy. With the same adsorbed amount （0.07 ML）, the molecules deposited by low-temperature evaporation show three kinds of ordered structures whereas those deposited by high-temperature evaporation have size-dependent ordered structures. The distinct differences in the self-assembly structures and in the electron density of states inside the molecule near the Fermi energy demonstrate that the Br atoms of the molecule desorb at the higher evaporation temperature.     

Structural and Magnetic Properties of Ultrathin Fe Films on Pt（O01） Surface

Magnetic anisotropy evolution of ultrathin Fe films grown on Pt(001)single-crystal surface is investigated by UHV in situ surface magneto-optical Kerr effect (SMOKE)measurement.After annealing at～600K，the magnetic anisotropy of Fe film switches from in-plane to perpendicular at low coverage,leading to a spin reorientation transiton (SRT).Meanwhile,in the range of 3-4 monolayer (ML) thickness,the coercivity of the Fe polar hysteresis loop decreases dramatically.Further scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED) investigation correlates the magnetic properties with the film structures.We attribute this SRT to the formation of Fe-Pt ordered alloy.     

Two-dimensional topological insulators with large bulk energy gap

Two-dimensional(2D) topological insulators(TTs,or quantum spin Hall insulators) are special insulators that possess bulk 2D electronic energy gap and time-reversal symmetry protected one-dimensional(1D) edge state.Carriers in the edge state have the property of spin-momentum locking,enabling dissipation-free conduction along the 1D edge.The existence of 2D TIs was confirmed by experiments in semiconductor quantum wells.However,the 2D bulk gaps in those quantum wells are extremely small,greatly limiting potential application in future electronics and spintronics.Despite this limitation,2D TIs with a large bulk gap attracted plenty of interest.In this paper,recent progress in searching for TIs with a large bulk gap is reviewed briefly.We start by introducing some theoretical predictions of these new materials and then discuss some recent important achievements in crystal growth and characterization.     

Stanene: A good platform for topological insulator and topological superconductor

Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to their great potential for dissipationless electron transportation and fault-tolerant quantum computing, respectively. Here we focus on stanene, the tin analogue of graphene, to give a brief review of their development as a candidate for both 2D TI and TSC. Stanene is proposed to be a TI with a large gap of 0.3 eV, and its topological properties are sensitive to various factors, e.g., the lattice constants, chemical functionalization and layer thickness, which offer various methods for phase tunning. Experimentally, the inverted gap and edge states are observed recently, which are strong evidences for TI. In addition, stanene is also predicted to be a time reversal invariant TSC by breaking inversion symmetry, supporting helical Majorana edge modes. The layer-dependent superconductivity of stanene is recently confirmed by both transport and scanning tunneling microscopy measurements. This review gives a detailed introduction to stanene and its topological properties and some prospects are also discussed.     

Topological edge states and electronic structures of a 2D topological insulator： Single-bilayer Bi （111）

Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi （111） bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi （111） ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi （111） bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy （STM/STS）, angle-resolved photoemission spectroscopy （ARPES）, and first principles calculations.     

Magnetism of Zr atomic wires

By using the full-potential linearized augmented plane wave method to perform ab initio total energy calculations, we have explored magnetic ordering in one-dimensional Zr wires. The result shows that Zr can form linear, or dimerized, or zigzag wires, and the magnetic properties strongly depend on their geometric structures. The linear and zigzag wires exhibit ferromagnetic ground states at the equilibrium bonding distance, while the dimerized wire, despite its higher stability than that of the linear one, exhibits nonmagnetic ground states. The most stable geometry is shown to be the zigzag wire with a magnetic moment of 0.26μB per atom.     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/Si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响。扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面上的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象。通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了量子尺寸效应对表面反应活性的调控作用。     

探寻马约拉纳费米子

1937年,31岁的意大利科学家马约拉纳发表了一篇理论文章,预言自然界可能存在一种与其反粒子完全相同的特殊粒子,也就是马约拉纳费米子。一年之后,这位年轻的天才物理学家在一次度假途中神秘消失。此后近80年里,尽管江湖上各种传闻,各路物理界高手四处打探,他和他所预言的“马约拉纳费米子”一直渺无音讯,神秘无踪。     

Adsorption of Perylene on Si(111)(7×7)

We investigate the adsorption of organic molecular semiconductor perylene on(7 × 7) reconstructed Si(111)surface by ultraviolet photoemission spectroscopy.It is observed that seven features that derive from the organic material are located at 0.71,2.24,4.0,5.9,7.46,8.65 and 9.95 eV in binding energy.The theoretical calculation results reveal the most stable adsorption geometry of organic molecule perylene on Si(111)(7 × 7) substrates is at the beginning of deposition.