排序方式: 共有139条查询结果,搜索用时 15 毫秒
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用37单元哈特曼 夏克波前传感器以419Hz的帧频对加热的扁喷管气流的气动光学特性进行了测量,采用模式法进行波前重构,从而得到观测孔径内该低速热射流所造成的光程差分布,进而计算出其Strehl比,时间序列结果反映了它们的动态过程。实验给出了4.3~8 m/s及44~85℃的中心平均空气流速和温度的几种不同气流参数下的光程差分布,用相关的方法得出剪切层中相干结构(涡)的流动速度,结果表明,剪切层中相干结构引起的光程差分布及Strehl比随气流参数而变化;当高于65℃时,温度的影响不明显。 相似文献
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锥形光纤纤芯直径沿着光纤长度方向均匀增大,在抑制非线性效应方面有着独特的优势。理论对比了单横模高斯光束输入时,输入纤芯直径均为50 μm、纤芯直径沿着光纤长度方向恒定、线性增大和非线性增大的变纤芯直径传能光纤的输出光谱演化和拉曼光特性。在相同条件下,输入功率10 kW时,恒定型传能光纤的输出光谱中,拉曼抑制比(定义为输出光谱中信号光峰值强度分贝值与拉曼光峰值强度分贝值之差)为33.1 dB,线性增大和非线性增大型的输出拉曼抑制比分别为47.0,48.6 dB,分别优于恒定型传能光纤13.9,15.5 dB;输入功率达17.5 kW时,恒定型传能光纤中有81.6%的输入能量被耗散或转移到其他波长,线性增大和非线性增大型仅不到2%,其输出的信号光波段能量占总输入能量的98.1%,98.9%。结果表明,使用线性增大型或非线性增大型传能光纤代替恒定型常规光纤,可以有效提高受激拉曼散射阈值,相关研究可以为大功率光纤合束器和光纤端帽的设计提供有益参考。 相似文献
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Tolerance on tilt error for coherent combining of fiber lasers 总被引:1,自引:0,他引:1
Limited by the precision of optical machining and assembling, the optical axes of lasers in an array cannot be strictly parallel to each other, which will result in the beam quality degradation of the combined beam. The tolerance on tilt error for coherent combining of fiber lasers is studied in detail. The complex amplitude distribution in the far field for the Gaussian beam with tilt angle is obtained by a novel coordinate transform method. Effect of tilt error on coherent combining is modelled analytically. Beam propagation factor is used to evaluate the effect of coherent combining. Numerical results show that for ring-distributed fiber laser array with central wavelength A and geometry size D, if the root-mean-square (RMS) value of the tilt error is smaller than 0.72A/D, the energy encircled in the diffraction-limited bucket can be ensured to be more than 50% of the value when there is no tilt error. The results are helpful to the designing and manufacturing of fiber array for coherent combining. 相似文献
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The dependencies of stimulated Brillouin scattering(SBS) threshold in pulsed fiber amplifiers on spectral linewidth,pulse duration,and repetition rate are measured and discussed.Experimental results show that the SBS threshold is highly related to spectral linewidth and pulse duration.Therefore,the power handling limitation in a pulsed fiber amplifier may be the average power in some cases and the peak power in others. 相似文献
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InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication. 相似文献
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