Zn^2＋—Na^＋交换动力学研究——Ⅱ.交换方向,温度和粒径的影响

本文研究了强酸性阳离子交换树脂上Ｚｎ＾２＋－Ｎａ＾＋交换过程的动力学。讨论了交换方向、温度和粒径对交换速率的影响。测出不同控制机理，不同交换方向时的传质参数和２５℃－５３℃范围内的扩散活化能。发现在低浓度ＺｎＣｌ２溶液与Ｎａ＾＋型树脂交换时，用液相分析是液膜扩散控制过程，但用电子探针固相分析却表明树脂内有明显的浓度梯度。说明仅用液相浓度变化与模型方程拟合的方法来判断速率控制机理具有一定的局限性。     

溅射气体中氩气含量对Y1Ba2Cu3O7-δ薄膜结构和Tc的影响

采用倒筒直流磁控溅射系统在不同溅射气体组分下(氩氧比不同)原位沉积Y1Ba2Cu2O7-δ(YBCO)薄膜.样品的XRD分析发现在Ar含量过高和过低的溅射气氛下沉积的薄膜存在极少量的BaCuO2第二相, 同时显示薄膜的c轴长度, (006), (007)对(005)峰强度比随着溅射气体中Ar含量的变化而发生改变.通过薄膜超导零电阻温度检测发现, YBCO薄膜的超导零电阻温度Tc随之发生改变.这说明在磁控溅射沉积YBCO薄膜过程中, 溅射气体中Ar气含量影响薄膜各元素的化学计量比, Ar含量过高和过低导致沉积YBCO薄膜晶体结构发生畸变, 恶化超导电性.     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.     

旋转物体温度的非接触检测原理

本文讨论了利用交流电桥作感温部件及旋转变压器原理实验对旋转体温度的非接触检测。