化学增幅抗蚀剂用光产酸源

对化学增幅抗蚀剂体系的组成及化学增幅作用做了阐述。介绍了化学增幅作用中的关键组分——光产酸源和酸增殖剂的发展概况，并对重氮盐、锘盐、有机多卤化物、磺酸酯类化合物等产酸源的产酸机理、适用光源分别进行了阐述。从目前国际发展的趋势来看，硫锘盐和磺酸酯类的光产酸源占据主要地位，有机多卤化物中的三嗪化合物还有少量应用。频哪醇单磺酸酯类化合物作为酸增殖剂使用较为普遍。     

新型化学杂交剂哒嗪酮衍生物的合成及其对小麦去雄活性研究

从吡喃酮与不同的芳基重氮盐的偶联反应制备了1,4-二氢-3-羧基哒嗪-4-酮类化合物,并首次以它们为原料分别与氨基硫脲和肼或苯肼进行环合反应得到了两类去雄化学杂交剂杂环化合物--哒嗪酮氨基噻唑以及哒嗪吡唑酮化合物.初步去雄活性实验显示哒嗪酮氨基噻唑盐酸盐类化合物在较高剂量时具有去雄活性,在剂量为2100g/ha时去雄率达99%左右.     

基于感光性重氮基高分子组装膜的微图像

从重氮基高分子的自组装膜,在掩膜覆盖下进行选择性曝光,再在十二烷基硫酸钠水溶液中显影,未曝光部分在显影中被洗除,而曝光部分因形成共价交联结构不被洗除,得到清晰图像。本文简要介绍了CdS纳米颗粒、Au纳米颗粒、手性聚苯胺以及DNA-Ag膜的微图像。     

壳聚糖与尿素的相互作用及其应用研究进展

尿素能够显著破坏甲壳素/壳聚糖分子氢键结构和疏水相互作用,增加其临界胶束浓度,促进多糖大分子的溶解,并能减少其在溶液中的自聚集现象.碱-尿素水溶液可以作为一种新型的甲壳素/壳聚糖绿色溶剂,有望用于对刺激性要求较为苛刻的食品、生物医学等领域.壳聚糖衍生物特别是其与过渡金属离子的配合物具有良好的尿素吸附功能,可用于尿毒症患者血液中小分子毒物的吸附,对机体刺激性小且不吸附血清蛋白等生物大分子.有望成为血液灌流治疗法中清除尿素等小分子毒性物质的良好吸附剂.壳聚糖还可以作为包膜材料,制备壳聚糖包膜尿素,与普通的包膜尿素相比性能更为优越.     

因变量缺失下变系数部分线性测量误差模型的变量选择

主要研究因变量存在缺失且协变量部分包含测量误差情形下,如何对变系数部分线性模型同时进行参数估计和变量选择.我们利用插补方法来处理缺失数据,并结合修正的profile最小二乘估计和SCAD惩罚对参数进行估计和变量选择.并且证明所得的估计具有渐近正态性和Oracle性质.通过数值模拟进一步研究所得估计的有限样本性质.     

柯西定理在不等式证明中的应用

本文利用内积空间理论给出一些不等式的代数证明，方法简单扼要．     

Characterization of Al2O3 /GaN/AlGaN/GaN metalinsulator-semiconductor high electron mobility transistors with different gate recess depths

In this paper,in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs),we demonstrate better performances of recessed-gate Al 2 O 3 MIS-HEMTs which are fabricated by Fluorine-based Si 3 N 4 etching and chlorinebased AlGaN etching with three etching times (15 s,17 s and 19 s).The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of AlGaN/GaN HEMT.Through the recessed-gate etching,the transconductance increases effectively.When the recessed-gate depth is 1.02 nm,the best interface performance with τ it =(0.20-1.59) μs and D it =(0.55-1.08)×10 12 cm 2 ·eV 1 can be obtained.After chlorine-based etching,the interface trap density reduces considerably without generating any new type of trap.The accumulated chlorine ions and the N vacancies in the AlGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices.By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times,it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively.     

Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around --1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (--3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μ m gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, V_T of the thin barrier HEMTs is much more stable under the gate step-stress.     

四苯乙烯基铂炔化合物的合成及发光性能

以4,4’-二溴二苯甲酮为原料,经缩合反应、Sonogashira偶联等反应合成了化合物3。以三联吡啶与四氯铂酸钾等为原料合成了化合物5,化合物5与化合物3通过Cu(I)催化的脱氯化氢反应得到目标化合物6,产率48%,其结构经¹H NMR,¹³C NMR和HR-MS（ESI）表征。吸收光谱和荧光光谱研究结果表明：化合物3在四氢呋喃/水体系中具有明显的AIE现象;而化合物6在二甲基亚砜/二氯甲烷体系中,随着二氯甲烷含量的增加荧光先增强后淬灭。      

Reliability analysis of GaN-based light emitting diodes for solid state illumination

In this paper, we have discussed the effect of electrical stress on GaN light emitting diode （LED）. With the lapse of time, the LED with an applied large current stress can reduce its current more than without such a stress under a large forward-voltage drop. Its scanning electron microscopy （SEM） image shows that there exist several pits on the surface of the p-metal. With an electrical stress applied, the number of pits greatly increases. We also find that the degradation of GaN LED is related to the oxidized Ni/Au ohmic contact to p-GaN. The electrical activation of H-passivated Mg acceptors is described in detail. Annealing is performed in ambient air for 10 min and the differential resistances at a forward-voltage drop of 5 V are taken to evaluate the activation of the Mg acceptors. These results suggest some mechanisms of degradation responsible for these phenomena, which are described in the paper.