The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a(ZrO2)0.6(SiO2)0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated.The precipitation reaction in the charge trapping layer,forming ZrO2 nanocrystallites during rapid thermal annealing,was investigated by transmission electron microscopy and X-ray diffraction.It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850℃ for 60s exhibits a maximum memory window of about 6.8V,good endurance and a low charge loss of ～25% over a period of 10 years(determined by extrapolating the charge loss curve measured experimentally),even at 85℃.Such 850℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.     

电驱动偏心转子与复合振动环境振动同步的理论研究

在振动环境中，当带偏心转子的电机旋转角速度与振动环境的角频率相近时，两者可以实现振动同步。针对这一特殊现象，本研究提出一种小参数积分均值法来研究该振动同步问题，设置电驱动偏心转子角速度与振动环境角频率之差的积分均值为变量，通过积分变换将电驱动偏心转子与复合振动环境之间的动力学方程转化为二阶周期系数微分方程，应用周期系数二阶微分方程相关理论推导得出实现振动同步的同步性判据和稳定性判据，并通过数值仿真验证了同步性与稳定性判据的有效性。本研究提出的将电驱动偏心转子角速度与振动环境角频率之差的小参数积分均值法，为研究振动同步理论提供了一种新的方法。     

一个可变保费巨灾风险模型的局部破产概率

考虑极端风险的情况,建立了巨灾风险模型,得到了保险公司破产概率的局部结果.预期有巨灾索赔发生的时候,模型会对保险费率做出相应的调整以减少损失.还提出一个网络马氏骨架框架下的回归型索赔相依的风险模型,该模型不仅在精算领域有很大的理论和应用价值,在网络,金融,生物,排队论等其他领域也将有广泛的应用.     

DC-DC buck变换器的混沌控制

基于DC-DC buck变换器电路,采用了一种新的混沌控制方法,即对混沌动力系统增加 一个具有分段二次函数x|x|形式的非线性反馈控制器,使该系统成功地控制到稳定的 周期轨道。数值仿真表明,该控制方法易于实现、控制代价小、结构简单。     

基于2-甲基-8-羟基喹啉的镝单分子磁体的晶体结构及磁性

以2-甲基-8-羟基喹啉(HL)为配体合成了2个含有镝离子的配位化合物[Dy₂L₄(HL)₄(H₂O)₂](ClO₄)₂·2H₂O(1)和[Dy₂L₆(C₂H₅OH)]·H₂O(2)。虽然在这两个配位化合物中配体都是2-甲基-8-羟基喹啉,但其参与配位的方式不同。这导致2个化合物中镝离子所处的配位环境不同,进而对化合物的磁性产生了影响。     

不同工艺处理的烟草中游离氨基酸含量的反相HPLC分析

烟草中的含氮化合物对烟草的感官评吸质量和吸者健康都有重要的影响。氨基酸含量与烟草的品质有着密切的关系,是重要的致香前体物质。烟草中氨基酸有20余种。在烟草调制、醇化或发酵、加工乃至燃烧过程中,游离氨基酸与还原糖之间可发生酶催化及非酶催化的棕色反应,即梅拉德反应     

辣根过氧化物酶催化动力学光度法测定汞

基于辣根过氧化物酶催化H2O2-4-氨基安替比林-2,4-二氯苯酚的反应中,汞离子对于酶催化的抑制作用,建立了用动力学分光光度法测定Hg2 新方法.测定范围为1.0-5.0μg/mL,检出限为5.78×10-7g/mL,优化了测定Hg2 的实验条件并讨论了共存离子对测定的影响.本法简单、快速.     

ηb decay into charmonium in association with cc pair

We calculate the inclusive decay rates of ηb into charmonium via double c~ pairs for S- and P-wave states ηc, J/ψ and XcJ within the framework of non-relativistic QCD （NRQCD） factorization at leading order in αs. Besides calculating the contributions of the color-singlet channels ηb → cc[2s＋1SL^（1）]＋cc, the effects of cc pair in the color-octet configurations are also considered. We find that ηb → cc[3S1^（8）] ＋cc make a small contribution to Br（ηb →J/ψ（ηc）＋cc）. While in the ηb →XcJ ＋cc case, the color octet contributions are significant, for they are of the same a 5 order as the color-singlet processes. We predict Br（ηb →J/ψ（ηc）＋cc） = 2.99（2.75） × 10^-5 Vc for S-wave states J/ψ and ηc, and Br（ηb → XcJ ＋cc） = （4.37, 3.40, 2.83） × 10^-5 （for J = 0,1, 2） for P-wave states XcJ. In the end, we also find Br（ηb → cccc） is almost saturated by ηb decay into charmonium in association with cc pair from the point of view of duality.     

稀土元素掺杂对VH2解氢性能的影响

采用密度泛函理论(DFT)的第一性原理的平面波超软赝势方法,研究了La, Ce和Pr掺杂对VH₂的 电子结构和解氢性能的影响.计算结果显示La, Ce和Pr掺杂VH₂后晶体模型的费米能级E_f处 电子浓度N (E_f)的增加,表明体系结构稳定性减弱,解氢能力增强; 电子密度计算也显示V-H之间相互作用减弱,解氢能力增强;同时Mulliken布居数计算结果还显示掺杂以后 解氢能力增强与V-d轨道Mulliken布居数减少, V-s轨道Mulliken布居数增加有关.     

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors.Compared to a single bent energy band,the bandgap structure with combining bent and flat energy bands exhibits larger memory window,faster program/erase speed,lower charge loss even at 200℃ for 104s,and wider temperature insensitive regions.The tunneling thickness together with electron recaptured efficiency in the trapping layer,and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics.Therefore,the proposed ZrxSi1-xO2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications,taking into consideration of the trade-off between the operation speed and retention characteristics.