中位-四(对烷氧苯基)卟啉Co2+、Cu2+、Zn2+、Pb2+配合物的合成与表征

卟啉类化合物由于其独特的结构和特有的性能,使得它在众多领域受到人们的高度重视,有关研究非常活跃［１～２］。目前液晶卟啉的研究受到广泛关注,许多液晶卟啉已经被合成出来［３～４］。Ｓｈｉｎ－ｉｃｈｉ等人于１９９０年研究了两个四（ｐ－ｎ－烷氧苯基）卟啉及其配合物的液晶性［５］,Ｓｈｉｍｉｚｕ等人于１９９３年系统研究了四（对烷基苯基）卟啉的液晶性［６］,这些现象引起了人们对卟啉类化合物液晶性能研究的极大兴趣。我们合成了十四种未见文献报道的新的ＣＯ２＋、Ｃｕ２＋、Ｚｎ２＋、Ｐｂ２＋四个系列的中位－四（对烷…     

Hydrothermal Synthesis and Structure Characterization of a Novel 4,4′-Bipyridine Bridging Dumbbell-like Dimeric Pentamolybdate

1 INTRODUCTION Polyoxometalates (POMs) have been attracting extensive interest of many chemists in solid-state materials chemistry owning to the various structures and great potential applications in catalysis, medi- cine, photo-electricity and magnetism[1～9]. Over the past decades, lots of novel POMs have been pre- pared by hydrothermal synthesis, such as discrete structure[10], one-dimensional chain-like structure[11, 12] and higher dimensional architecture[13～18]. However, in these…     

一种实用化实时测温系统的优化设计

基于基尔霍夫定律，利用半导体激光器及钽酸锂热释电探测器设计了一种实用化的实时测温系统。依照测温系统各主要技术指标(温度分辨力、温度的标准偏差及测温范围)与各主要技术参量(激光光源的能量、波长、放大器的带宽及光学系统的相对孔径等)之间的关系，对实时测温系统的各主要参量(激光光源的能量、光学系统的相对孔径及放大器的带宽)进行了优化设计。实验表明，在测温范围673～1473K内，温度测量的不确定度优于0．3％，分辨力优于0．4K，均符合设计要求。     

基于G-四链体-氯化血红素DNA酶比色法测定银离子和汞离子传感器的构筑

利用G-四链体DNA(5′-CTGGGAGGGAGGGAGGGA-3′)与氯化血红素结合形成G-四链体-Hemin DNA酶,其能高效催化H_2O_2氧化反应底物由无色变为绿色,当溶液中有Ag~+或Hg~(2+)存在时会阻碍该DNA酶的形成,导致绿色溶液变浅。基于此,建立了比色法测定Ag~+和Hg~(2+)的传感器。在最佳实验条件下,溶液的吸光度与Ag~+和Hg~(2+)浓度分别在100.0～1 000.0 nmol/L和80.0～800.0 nmol/L范围内具有良好的线性关系,检出限(3δ/Slope)分别为55.9 nmol/L和64.3 nmol/L。该方法具有较好的选择性,采用该方法对实际样品进行测试,结果满意。     

基于液晶调制器调制的实时测温系统

分析了一种基于基尔霍夫定律的钽酸锂(LiTaO3)热释电探测器作为接收元件的实时测温系统中,机械式调制盘对测量精度影响,提出了改变机械式调制盘对测量精度的影响的方法;介绍了液晶调制器的结构、对辐射调制的原理以及在使用过程中的优点。设计了利用液晶调制器替代机械调制器的钽酸锂热释电实时测温系统。结果表明,利用液晶调制器改进后的测温系统在给定的温度范围中,测量精度均有明显的改善,符合测量要求。     

Electron impact total(elastic+inelastic) cross sections with simple molecules consisting of N & O atoms at 100-1600eV

A model complex optical potential rewritten by the conception of bonded atom, which considers the overlapping effect of electron cloud, is employed to calculate the total (elastic + inelastic) cross sections with simple molecules (N2, O2, NO2, NO, N2O) consisting of N & O atoms over an incident energy range of 100 - 1600 eV by the use of additivity rule at Roothaan-Hartree-Fock level. In the study, the complex optical potential composed of static, exchange, correlation polarization plus absorption contributions firstly uses bonded-atom conception. The qualitative results are compared with experimental data and other calculations wherever available and good agreement is obtained. The total cross sections of electron-molecule scattering above 100 eV can be successfully calculated.     

华北平原古河道的形成研究

本文利用大比例尺地形图判读、遥感影象标描、历史地理资料考证、野外调查与描绘、岩芯样品分析测定等手段,对华北平原埋深50m以内的古河道进行了复原与分期、断代研究.发现该地区古河道有着典型的河流相沉积标志,其发育程度严格受基底构造控制,形成与演变完全受地理环境制约,人类活动对河道变迁与古河道的形成起了越来越大的作用.     

用CCSD(T)方法计算基态SH和SD的光谱常数(英文)

利用CCSD(T)方法和系列相关一致基cc-pVXZ及aug-cc-pVXZ(X=D,T,Q,5)对SH和SD分子的基态平衡几何,谐振频率和离解能进行了优化计算.利用优选出的CCSD(T)/aug-cc-pV5Z方法对SH和SD的基态进行单点能计算,并将计算结果拟合成了Murrell-Sorbie函数.利用得到的解析势能函数,计算了SH和SD的其余3个光谱常数(ω_ex_e,α_e和B_c),结果表明:除SD的ω_ex_e值外,其余结果均与实验值符合得相当好,但计算得出的ω_ex_e值与推导出的值25.134 cm~(-1)符合得很好.     

GaH(X1Σ+)自由基的光谱常数与分子常数研究

采用内收缩多参考组态相互作用(MRCI)方法和系列相关一致基aug-cc-pVnZ对GaH (X1Σ+)自由基的光谱性质进行了研究. 通过与实验结果的比较, 发现在aug-cc-pV5Z基组、且考虑相对论修正时得到的De, Re和ωe与实验结果较为一致. 在这一基组下对GaH(X1Σ+)自由基的势能曲线进行了计算、并将计算结果拟合成了Murrell-Sorbie函数, 由此得到的光谱常数(ωeχe, αe和 Be)也与实验结果较为相符. 以得到的解析势能函数为基础, 通过求解双原子分子核运动的径向Schrödinger方程, 找到了J = 0时该自由基存在的全部27个振动态. 针对每一振动态, 还计算了它的振动能级、经典转折点、转动惯量和离心畸变常数, 文中的大部分分子常数均属首次报导.     

Molecular Dynamics Study of Mechanical Behaviour of Screw Dislocation during Cutting with Diamond Tip on Silicon

By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are calculated. A screw dislocation is introduced into workpiece Si. It is found that motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocation is far below the yield strength of Si.