氧化石墨烯的制备及低温还原研究

用化学氧化法制备氧化石墨烯,并用一种新型的低温化学还原方法将其还原。用红外光谱、拉曼光谱、X射线衍射、X射线光电子能谱、扫描电镜、原子力显微镜等多种手段表征氧化石墨烯和还原氧化石墨烯的结构与形貌。结果表明,即使在低温条件下,壳聚糖依然可以还原氧化石墨烯,从而预示,在低温条件下,能够在同一环境下实现氧化石墨烯的还原和石墨烯的应用。     

钠原子连接的C_(60)富勒烯二聚物的等离激元激发

基于含时密度泛函理论,研究了钠原子连接的C60富勒烯二聚物的等离激元激发。由于碱金属钠原子和C60分子之间的耦合,在红外光谱区,钠原子连接的C60富勒烯二聚物出现了等离激元共振激发。随着C60分子之间间隙的逐渐减小,红外光谱区的等离激元先发生红移,之后发生了蓝移。在间隙较大,C60分子间电容性相互作用时,中红外光谱区的等离激元是一种多极共振模式。在间隙较小时,由于电子的隧穿,中红外光谱区的等离激元逐渐演化为近红外光谱区的另外一种等离激元共振模式,该等离激元共振模式是长程电荷转移激发模式和多极共振模式的耦合。     

Spectroscopic investigations on NO~+(X~1Σ~+, a~3Σ~+, A~1Π) ion using multi-reference configuration interaction method and correlation-consistent sextuple basis set augmented with diffuse functions

Three low-lying electronic states (X1Σ+, a3Σ+, and A1Π) of NO+ ion are studied using the complete active space self-consistent-field (CASSCF) method followed by highly accurate valence internally contracted multi-reference configuration interaction (MRCI) approach in combination of the correlation-consistent sextuple basis set augmented with diffuse functions, aug-cc-pV6Z. The potential energy curves (PECs) of the NO+(X1Σ+, a3Σ+, A1Π) are calculated. Based on the PECs, the spectroscopic parameters Re, De, ωe, ωeχe, αe, Be, and D0 are reproduced, which are in excellent agreement with the available measurements. By numerically solving the radial Schrdinger equation of nuclear motion using the Numerov method, the first 20 vibrational levels, inertial rotation and centrifugal distortion constants of NO+(X1Σ+, a3Σ+, A1Π) ion are derived when the rotational quantum number J is equal to zero (J = 0) for the first time, which accord well with the available measurements. Finally, the analytical potential energy functions of these states are fitted, which are used to accurately derive the first 20 classical turning points when J = 0. These results are compared in detail with those of previous investigations reported in the literature.     

线性升温条件下纳米ZnSe的生成动力学

用非等温TG-DTG技术,在5.0、10.0、15.0和20.0 K•min－1 4个不同线性升温条件下,研究了从配合物ZnSe(C2H8N2)制备纳米ZnSe的过程动力学.结果表明: 该过程为三维扩散机理；机理函数为反Jander方程, f(α)＝ ，G(α)＝ ；表观活化能E=209.61 kJ•mol－1,指前因子A=1015.7 s－1,动力学方程为 ,并用结果解释了实验现象.初次报导了纳米ZnSe在420 ℃左右氧化为粒度低于40 nm的纳米ZnO.     

平面铂电极上吸附氢原子表面扩散系数的测定

This Paper describes an experimental method that established a local Pt/Nafion interface on the Platinum Plane, so that the boundary conditions and the initial condition of the (diffusion equation about the diffusion of adsorbed hydrogen atom the platinum plane can be controlled. The average diffusion coefficient of underpotential deposition of hydrogen on a surface of platinum was obained for the first time and D=1.50 ×10-4cm2•s-1.The accuracy of the datum was discussed.     

原油加剂降凝的研究

采用高温气相色谱分析了越南、阿曼和大庆原油中蜡的碳数及分布组成,采用偏光显微镜观察了不同蜡含量原油的蜡晶形态变化时,分析了蜡结晶过程中的结构、分布状态和生长规律与不同原油组成的关系,得出了蜡结晶过程与原油组成之间的变化规律。结合采用X射线衍射仪和DSC差示扫描量热仪对自制聚合物(MOA)的结晶度和热性能的分析测试,表明原油中蜡晶结构与聚合物的结晶度密切相关,结晶度变化时,蜡晶分散效果有所区别,两者匹配状态时分散效果最佳,体系的粘温特性研究也证明了这一点。同时,降凝剂使得系统的热性能——溶解焓和溶解熵均发生了改变,原油中石蜡的熔程变长,相变能变大。     

金刚石Raman光谱荧光本底及其对高压原位Raman光谱测试的影响

金刚石对顶砧(diamond anvil cell,DAC)装置(如图1所示)是目前产生压力最高的静态高压实验装置,它以金刚石单晶作对顶砧单轴挤压样品产生高压,由于金刚石在很宽的能量范围对光子(可见光、高能X射线等)透明,在高压实验中可以通过显微镜观察样品,并可对样品进行高压原位X射线衍射和光谱(红外光谱、Raman光谱等)测试,这一特点使其在高压科学领域得到广泛的应用.在高压原位Raman光谱测试中,激发光源透过金刚石对顶砧照射到样品上产生Raman信号,样品的Raman信号穿过金刚石对顶砧经显微镜物镜收集并最终被探测器接收.与常规的Raman光谱测试相比,基于DAC装置的高压原位Raman光谱测试光路中多出了金刚石对顶砧,需要采用长焦物镜收集信号,并且随着实验压力的升高,样品的Raman信号强度降低,因此提高信噪比是获得较高质量高压原位Raman光谱的关键,而金刚石对顶砧的荧光本底是影响信噪比的关键因素.本文通过对20多颗金刚石对顶砧进行Raman光谱测试,对金刚石的Raman光谱信号(一级和二级)和非随机噪声进行了系统的评估,并结合高压原位Raman光谱测试的具体特点,探讨金刚石对顶砧荧光本底对测试结果的影响.     

基于光谱吸收法的碱金属原子配比检测方法研究

碱金属混合物原子配比是超高灵敏惯性测量装置表头的重要参数,需精确测量。针对碱金属配比与碱金属蒸汽密度相关的特点,提出运用光深理论检测碱金属配比。结果表明：受多种因素影响,光深理论得到的碱金属蒸汽密度与饱和蒸汽压经验公式计算的结果相差3个数量级,无法保证碱金属配比的测量精度;改变数据处理方法,建立光谱吸收率与气室内部温度的映射模型,运用光谱吸收率标定碱金属气室内部温度,通过碱金属饱和蒸汽压经验公式计算气室内部碱金属原子的配比,多组数据分析表明：检测误差在10%以内。     

金刚石压腔高温高压原位谱学研究的评述

金刚石压腔 (DAC)已经可以达到 5 5 0 GPa的压力和 6 0 0 0 K的温度 ,其高温高压谱学原位测量已经成为现代科学的一种重要的手段和方法。目前利用 DAC可以进行光谱学 (拉曼光谱、红外光谱、荧光光谱 )、衍射 (X射线衍射和 XAFS)、布里渊散射、核磁共振 (NMR)以及穆斯堡尔谱的高温高压原位研究。设计用于各种不同需要的便宜的压腔、合适的谱学测量方法以及压力内标物质是进一步拓宽 DAC应用的发展方向。     

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In_2S_3 heterostructure and its solar cell performance

The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by thermal evaporation method at temperatures of 30,100,150,and 200 ℃,respectively.By using x-ray photoelectron spectroscopy(XPS),the valence band offsets(VBO) are determined to be-0.28 ±0.1,-0.28 ±0.1,-0.34 ±0.1,and-0.42 ±0.1 eV for the CZTS/In_2S_3heterostructures deposited at 30,100,150,and 200 ℃,respectively,and the corresponding conduction band offsets(CBO)are found to be 0.3 ±0.1,0.41 ±0.1,0.22±0.1,and 0.01 ±0.1 eV,respectively.The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures,which is especially serious at 200 ℃ leading to large amount of interface defects or the formation of CuInS_2 phase at the interface.The CZTS solar cell with the buffer layer In_2S_3 deposited at 150 ℃ shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In_2S_3 film induced by the appropriate deposition temperature.The device prepared at 100 ℃presents the poorest performance owing to too high a value of CBO.It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.