用改进的十进制遗传算法确定土质边坡最危险滑面

基于瑞典圆弧法和简化Bishop条分法分析土质边坡的稳定性,以圆弧滑裂面与边坡面的左右交点的两个横坐标和以滑裂面圆心的纵坐标作为优化变量,采用了一种改进的十进制遗传算法对优化变量进行优化。这种改进的遗传算法是以简单的十进制遗传算法为基础,结合优体克隆操作、子体优生操作和多代调环操作。通过计算ACADS考核题验证,该方法有较强的自适应能力,具有收敛速度快、解的精度高和避免出现早熟等优点。     

Molecular Dynamic Simulation on the Absorbing Process of Isolating and Coating of α-olefin Drag Reducing Polymer

The absorbing process in isolating and coating process of α-olefin drag reducing polymer was studied by molecular dynamic simulation method, on basis of coating theory of α-olefin drag reducing polymer particles with polyurethane as coating material. The distributions of sodium laurate, sodium dodecyl sulfate, and sodium dodecyl benzene sulfonate on the surface of α-olefin drag reducing polymer particles were almost the same, but the bending degrees of them were obviously different. The bending degree of SLA molecules was greater than those of the other two surfactant molecules. Simulation results of absorbing and accu-mulating structure showed that, though hydrophobic properties of surfactant molecules were almost the same, water density around long chain sulfonate sodium was bigger than that around alkyl sulfate sodium. This property goes against useful absorbing and accumulating on the surface of α-olefin drag reducing polymer particles; simulation results of interactions of different surfactant and multiple hydroxyl compounds on surface of particles showed that, interactions of different surfactant and one kind of multiple hydroxyl compound were similar to those of one kind of surfactant and different multiple hydroxyl compounds. These two contrast types of interactions also exhibited the differences of absorbing distribution and closing degrees to surface of particles. The sequence of closing degrees was derived from sim-ulation; control step of addition polymerization interaction in coating process was absorbing mass transfer process, so the more closed to surface of particle the multiple hydroxyl com-pounds were, the easier interactions with isocyanate were. Simulation results represented the compatibility relationship between surfactant and multiple hydroxyl compounds. The isolating and coating processes of α-olefin drag reducing polymer were further understood on molecule and atom level through above simulation research, and based on the simulation, a referenced theoretical basis was provided for practical optimal selection and experimental preparation of α-olefin drag reducing polymer particles suspension isolation agent.     

核物理中的π介子

在强子层次上,原子核或强子物质的基本组元是核子和介子.弄清这些强子的结构,并由基本原理出发研究它们的性质,是当代核物理的重要课题.在各种介子中,π介子是最轻且最重要的介子.关于自由空间中π介子的结构与性质、核介质内π介子的性质、π 核子相互作用与π 核相互作用等问题,始终受到相当多的关注.π介子在核物理中的作用直接联系着手征对称性,汤川秀树关于π介子的最初概念已经大大发展了.有清楚的实验证据表明,核内存在π介子的集体模式,这种集体模式与以前观测到的所有核集体运动模式截然不同.拟对π 核物理的研究现状及值得进一步研究的主要问题予以简要评述. At the hadronic level, nucleons and mesons are constituents of nuclei and hadronic matter. Understanding the structures of hadrons, finding the physics of how the properties of these particles arise from the first principle, are major interests in modern nuclear physics. Among mesons, the lightest and most important one is certainly the pion, thus it is no accident that its structure, properties (both in free space and in nuclear matter) and interactions with nucleons and nuclei have gotten considerable ...     

含面桥基磷硫配体的新颖三核和四核钌羰合簇

[Ru₃(CO)₁₂]与Lawesson试剂[(MeOC₆H₄PS₂)₂]反应,合成、分离并用谱学表征了产物三核钌羰合簇[(μ-H)₂Ru₃(CO)₉(μ₃-P)](Ⅰ)和四核钌羰合簇[(Ru₄(CO)₁₀(μ₃-S)(μ₃-PC₆H₄OMe)](Ⅰ).X射线衍射测定了的晶体分子结构,表明含有1个裸磷原子作为面桥基配体,并具有颇短的Ru-Ru键距,该价电子数为49e的簇合物对氧和水稳定.谱学分析表明,化合物具有四面体型的Ru₄簇心,其三角形面上分别具有面桥基μ₃-S和μ₃-PC₆H₄OMe基配体.     

邻苯二酚紫-示波计时电位法测定天然水中不同形态铝

报道邻苯二酚紫-示波计时电位法分别在酸性和碱性条件下直接检测天然水中的无机单核铝和总单核铝浓度。并用该法测定了水样中的总铝,有机单核铝和酸溶态铝,从而实现了天然水中5种Al形态的电化学测定。测定了20多个实际水样,与Driscoll方法进行了对照,结果基本一致。     

环境与生物样品中铝测定的吸光光度和荧光光度分析方法进展

本文评述了九十年代以来环境与生物样品分析中测铝的吸光光度和荧光光度分析方法的进展。对不同的方法进行了详尽的比较和讨论     

3英寸6H-SiC单晶的生长

SiC是宽带隙半导体材料的典型代表,具有优良的热学、力学、化学和电学性质,不但可以用作基于GaN的蓝色发光二极管的衬底材料,同时又是制作高温、高频、大功率电子器件的最佳材料之一,因此高质量、大直径SiC单晶的生长一直是材料研究领域的热点课题。目前美国的Cree公司在SiC单晶生长领域研发方面起步早、投入大,SiC单晶的直径达到4英寸,处于领先地位。我国在“十五”期间投入了一定的人力、物力进行了SiC单晶生长的研究,在生长2英寸SiC单晶的工作中取得了一定的成绩[1],但更大直径的SiC单晶生长技术进展缓慢,至今未见国内报道。而对…     

沿[1-100]方向升华法生长6H-SiC单晶

本文采用升华法沿着垂直于c轴方向的[1-100]方向生长6H-SiC单晶.利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1-100]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷.     

6H-SiC衬底片的表面处理

相比于蓝宝石,6H-SiC是制作GaN高功率器件更有前途的衬底.本文研究了表面处理如研磨、化学机械抛光对6H-SiC衬底表面特性的影响.用显微镜、原子力显微镜、拉曼光谱、卢瑟福背散射谱表征了衬底表面.结果表明经过两步化学机械抛光后提高了表面质量.经第二步化学机械抛光后的衬底具有优异的表面形貌、高透射率和极小的损伤层,其表面粗糙度RMS是0.12nm.在该衬底上用MOCVD方法长出了高质量的GaN外延膜.     

数学的距离观及其在数学教育中的应用

距离是中学数学的重要概念之一,平面几何、立体几何以及其它数学分支中的许多概念、定理和法则都是以距离概念为基础加以阐述与研究的．可以说,“距离”是众多数学概念的源概念．有鉴于此,教师在实际教学过程中有意识地培养学生良好的“距离观”与“距离感”(见下文),不但可以加深学生对数学概念及几何体系整体性的深入领会,而且也能培养学生在解题过程中思维的灵活性与广阔性,使学生形成良好的思维品质与习惯,大大提高他们的解题能力．