知其变更应知其所以变——对新课标下高中立体几何教学的认识

与传统立体几何相比,新课程下的立体几何有很突出的变化.在完成选修2-1的"空间向量和立体几何"部分的教学后,对新课标下的高中立体几何为什么要作这么大的变化,如何积极适应这种变化有一些认识与体会.现整理成下文,愿能对大家的立体几何教学有所帮助.     

石墨消解–火焰原子吸收光谱法测定土壤和沉积物中铜、锌、镍、铬

建立石墨消解–火焰原子吸收光谱法测定土壤和沉积物中铜、锌、镍、铬4种重金属的含量。采用盐酸–硝酸–氢氟酸–高氯酸作为消解体系对样品进行消解,铜、锌、镍以1%硝酸定容,铬以3%盐酸定容,采用火焰原子吸收光谱仪进行测定。铜、锌、镍、铬的质量浓度在0.00~1.00 mg/L范围内与吸光度均呈良好的线性关系,相关系数为0.999 4~0.999 5,方法检出限为0.7~1.5μg/g。测定结果的相对标准偏差为1.8%~3.4%(n=6),样品加标回收率为92.0%~105%。土壤和沉积物标准样品的测定值均在标准值可接受范围内。该方法操作简单、快速,结果准确、可靠,适用于土壤和沉积物样品中铜、锌、镍、铬等金属元素的测定。     

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results.     

A-188 V 7.2Ω·mm~2,P-channel high voltage device formed on an epitaxy-SIMOX substrate

This paper proposes a new n +-charge island (NCI) P-channel lateral double diffused metal-oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate.Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n +-regions on the interface of a buried oxide layer,and therefore the electric field of a dielectric buried layer (E I) is enhanced by these holes effectively,leading to an improved breakdown voltage (BV).The V B and E I of the NCI P-channel LDMOS increase to-188 V and 502.3 V/μm from 75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer,respectively.The influences of structure parameters on the proposed device characteristics are investigated by simulation.Moreover,compared with the conventional device,the proposed device exhibits low special on-resistance.     

浊点萃取-气相色谱-质谱法测定水中9种芳香胺类化合物

本研究基于以曲拉通X-114(Triton X-114)为萃取剂的浊点萃取技术和气相色谱-质谱法,建立了一种高效、高灵敏度的水体中9种芳香胺(2-氯胺、3-氯胺、4-氯胺、2-硝基苯胺、3-硝基苯胺、4-硝基苯胺、1-萘胺、2-萘胺和4-氨基联苯)的检测方法。采用单因素优化法对影响提取效果的重要因素进行了优化。采用气相色谱-质谱对水中9种芳香胺进行定性、定量分析,使用中等极性色谱柱DB-35 MS(30 m×0.25 mm×0.25μm)进行分离,在选择离子模式(SIM)下测定,内标法定量。实验结果表明,9种芳香胺在16 min内能够完全分离,且在各自的范围内线性关系良好,相关系数(R²)均大于0.998。9种芳香胺的检出限(LOD)和定量限(LOQ)分别为0.12～0.48μg/L和0.40～1.60μg/L。选取饮用水源地地表水、近海海水和典型印染行业废水3种类型水体进行加标回收试验,在2个加标水平(2.0、10.0μg/L)下,饮用水源地地表水的加标回收率为81.1%～109.8%,日内精密度为0.7%～5.2%,日间精密度为1.6%～6.2%;近海海水的加...     

不同酸体系对PM2.5中重金属测定的影响

采用3种消解体系对聚四氟乙烯滤膜采集的PM2.5样品进行消解,利用电感耦合等离子体质谱法测定样品中15种重金属元素。比较了硝酸–盐酸(A)、硝酸–过氧化氢(B)、硝酸–氢氟酸–高氯酸(C)3种体系的消解效果,分析了南京市PM2.5中重金属含量,并与文献值进行了比较。结果表明,A,B,C 3种体系测定结果的相对标准偏差的平均值分别为7.9%,9.9%和17.2%,加标回收率分别为80.5%~111.0%,87.5%~120.0%,74.1%~113.0%。C体系测定结果偏高,操作步骤繁琐,精密度差;A,B体系具有试剂用量少,精密度好,准确度高等优点,能满足环境空气PM2.5中多元素同时测定的要求。     

高炉生铁化学分析用与光谱分析用国家标准样品的研制

在冶炼、铸造、加工等操作中采取多种工艺措施,研制了高炉生铁化学分析用与光谱分析用国家标准样品,对研制的标准样品进行严格的均匀性和稳定性检验.由国内8家具有资质的分析实验室参与协作定值.定值元素达19项(C,Si,Mn,P,S,Cr,Ni,Cu,Mo,V,Ti,Co,Als,Alt,As,Sb,Sn,Pb,Zn等).分析...     

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench(HK TG VDMOS) is proposed in this paper.The HK TG VDMOS features a high-k(HK) trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage(BV).Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction(SJ) vertical double-diffused metal-oxide semiconductor(VDMOS),the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS(TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).     

气相色谱-质谱法测定土壤中14种苯胺类和联苯胺类化合物

针对土壤基质复杂及部分苯胺类化合物提取效率低的特点,基于气相色谱-质谱建立了土壤中14种苯胺类和联苯胺类化合物的分析方法。在采集后的土壤样品中加入5%亚硫酸钠水溶液进行密封,以防止目标物氧化变质,并于4℃以下冷藏保存,保存期限可达7天。实验比较了加速溶剂提取和振荡分散提取两种方式的提取效率,最终采用提取时加入碱性水溶液和乙酸乙酯-二氯甲烷(1∶4, v/v)的方法,在土壤-水相-有机相共存的条件下进行振荡分散萃取。萃取完成后经离心弃去土壤固相,将水相和有机相转移至分液漏斗中,并分离出有机相,再经弗罗里硅土固相净化柱净化、浓缩后,采用气相色谱-质谱联用仪测定,并以苯胺-d₅和苊-d₁₀为内标进行定量分析。实验考察了抗氧化剂和萃取溶剂种类、有机相与水相比例、盐析等对目标物萃取效率的影响,并在优化的实验条件下考察了方法的回收率及精密度。结果表明,14种目标化合物在0.5～100 mg/L范围内有良好的线性关系,相关系数(R)>0.999,方法检出限和定量限分别为0.02～0.07 mg/kg和0.08～0.28 mg/kg,在实际样品中的加标...     

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (R_on,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N⁺-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N_d) and reshape the electric field distribution. The highly doped N⁺-layer under the high-K dielectric acts as a low resistance path to reduce the R_on,sp. The new device with the high breakdown voltage (BV), the low R_on,sp, and the excellent figure of merit (FOM=BV²/R_on,sp) is obtained. The BV of HKLR LDMOS is 534 V, R_on,sp is 70.6 mΩ·cm², and FOM is 4.039 MW·cm^-2.