首页 | 官方网站   微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   37141篇
  免费   6565篇
  国内免费   4270篇
数理化   47976篇
  2024年   163篇
  2023年   854篇
  2022年   1516篇
  2021年   1666篇
  2020年   1745篇
  2019年   1703篇
  2018年   1424篇
  2017年   1347篇
  2016年   1926篇
  2015年   1879篇
  2014年   2399篇
  2013年   2921篇
  2012年   3432篇
  2011年   3416篇
  2010年   2288篇
  2009年   2171篇
  2008年   2405篇
  2007年   2095篇
  2006年   1950篇
  2005年   1509篇
  2004年   1174篇
  2003年   883篇
  2002年   930篇
  2001年   733篇
  2000年   583篇
  1999年   678篇
  1998年   572篇
  1997年   533篇
  1996年   525篇
  1995年   448篇
  1994年   372篇
  1993年   294篇
  1992年   288篇
  1991年   244篇
  1990年   213篇
  1989年   156篇
  1988年   96篇
  1987年   84篇
  1986年   106篇
  1985年   79篇
  1984年   40篇
  1983年   47篇
  1982年   30篇
  1981年   24篇
  1980年   8篇
  1979年   5篇
  1977年   3篇
  1974年   4篇
  1959年   2篇
  1957年   4篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
81.
The effects of preparation method, composition, and thermal condition on formation of β‐iPP in isotactic polypropylene/ethylene–propylene rubber (iPP/EPR) blends were studied using modulated differential scanning calorimeter (MDSC), wide angle X‐ray diffraction (WAXD), and phase contrast microscopy (PCM). It was found that the α‐iPP and β‐iPP can simultaneity form in the melt‐blended samples, whereas only α‐iPP exists in the solution‐blended samples. The results show that the formation of β‐iPP in the melt‐blended samples is related to the crystallization temperature and the β‐iPP generally diminishes and finally vanishes when the crystallization temperature moves far from 125 °C. The phenomena that the lower critical temperature of β‐iPP in iPP/EPR obviously increases to 114 °C and the upper critical temperature decreases to 134 °C indicate the narrowing of temperature interval, facilitating the formation of β‐iPP in iPP/EPR. Furthermore, it was found that the amount of β‐iPP in melt‐blended iPP/EPR samples is dependent on the composition and the maximum amount of β‐iPP formed when the composition of iPP/EPR blends is 85:15 in weight. The results through examining the effect of annealing for iPP/EPR samples at melt state indicate that this annealing may eliminate the susceptibility to β‐crystallization of iPP. However, only α‐iPP can be observed in solution‐blended samples subjected to annealing for different time. The PCM images demonstrate that an obvious phase‐separation happens in both melt‐blended and solution‐blended iPP/EPR samples, implying that compared with the disperse degree of EPR in iPP, the preparation method plays a dominant role in formation of β‐iPP. It is suggested that the origin of formation of β‐iPP results from the thermomechanical history of the EPR component in iPP/EPR. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1704–1712, 2007  相似文献   
82.
Low-threshold interband cascade lasers operating above room temperature   总被引:1,自引:0,他引:1  
Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm2 and a continuous wave output power of 140 mW/facet was obtained.  相似文献   
83.
Experimental investigations of a type-I noncollinear phase-matched optical parametric amplification based on lithium triborate, which was pumped by a 5-ns second-harmonic pulses from a Q-switched Nd:YAG, seeded by a cw Ti:sapphire laser at 800 nm, was presented. The experiments generated 2-ns signal output pulses at 800 nm, the maximum signal output pulse energy reached 19 μJ, the corresponding parametric gain was 44 dB. Furthermore, the experiments demonstrate that the 65 nm-FWHM parametric fluorescence gain spectrum could also be observed. A quantitative account of the ultrabroadband parametric fluorescence gain spectrum was given with our theory. The experimental measurements are in agreement with theoretical calculations.  相似文献   
84.
Because of their large band-gap, large high-field electron velocity, large breakdownfield, and large thermal conductivity, GaN and its heterojunction with AlGaN and InGaNhave foreseeable potential in the applications of high-power/temperature electronics, andoptoelectronic devices operative in UV and visible wavelength. Polarization inducedelectric field can reach the magnitude of ~MV/cm[1,2]. For AlGaN/GaN based FETs theconcentration of sheet carrier induced by polarization in the cha…  相似文献   
85.
86.
87.
It is of engineering importance to locate low altitude moving targets with acoustic methods due to the blindness of the traditional radar detecting. In this paper, an algorithm for locating low altitude moving targets is put forward based on a five-element planar acoustic sensor array. The method is realized through estimations of the sensor-to-sensor time delays of the source signal generated by the low altitude moving target. The angle and range estimation performance of the proposed method are analyzed, respectively, both in theoretical and numerical sense.  相似文献   
88.
The synthesis of three new series of chiral Schiff's bases containing benzilideneaniline and 2-hydroxybenzilideneaniline moieties as mesogenic cores is presented. Differential scanning calorimetry, optical polarizing microscopy and X-ray diffraction measurements were used to study the phase transition temperatures and behaviour. The results reveal that most of these materials show chiral smectic mesomorphism.  相似文献   
89.
The temperature dependence of the Cd hyperfine field in a trivacancy complex in Ni between 25 and300 K is reported. It was found that, unlike the Cd substitutional field in Ni which follows the temperature dependence of the magnetization, the Cd hyperfine field in a trivacancy complex is essentially temperature independent. This temperature anomaly is compared with other temperature anomaly of impurity hyperfine fields in ferromagnetic hosts.  相似文献   
90.
x射线近贴显微技术   总被引:1,自引:0,他引:1  
赵卫  张小秋 《光子学报》1993,22(1):35-39
x射线近贴显微技术不但可使活的生物样品成象,分辨率高于光学显微镜,而且人为的样品准备程序在该技术中都可避免。本文描述了用高功率激光打靶产生的等离子体作为软x射线源而进行的近贴显微研究,并得到了分辨率好于1μm的结果。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号